Patents Issued as Inventor and Co-inventor  - R.M.Wallace

Patent Independent Citations as of December 2006: 1030

  1. 7,115,461 (2006) High permittivity silicate gate dielectric J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
  2. 7,030,038 (2006) Low Temperature Method for forming a thin, uniform oxide: G.D. Wilk, R.M.Wallace and B.P.S.Brar
  3. 6,933,235 (2005) Method for removing contaminants from a substrate:
    M. A. Quevedo-Lopez, R.M.Wallace, M. El-Bouanani, and B.E.Gnade
  4. 6,897,105 (2005) Method of forming metal oxide gate structures and capacitor electrodes:
    G.D.Wilk; R.M.Wallace; J.M. Anthony; and P. McIntyre
  5. 6,841,439 (2005) High permittivity silicate gate dielectric:
    J.M.Anthony, S.R.Summerfelt, G.D.Wilk and R.M.Wallace
  6. 6,784,507 (2004) Gate Structure and Method
    R.M.Wallace and B.E.Gnade
  7. 6,730,977 (2004) Lower temperature method for forming high quality silicon-nitrogen dielectrics
    G.D.Wilk, J.M.Anthony, Y.Wei, and R.M.Wallace
  8. 6,624,944 (2003) Fluorinated coating for an optical element
    R.M.Wallace, M.W.Cowens and S.A.Henck
  9. 6,613,698 (2003) Low temperature methods for forming high quality silicon-nitrogen dielectrics
    G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  10. 6,552,388 (2003) Hafnium Nitride Gate Dielectric
    G.D.Wilk and R.M.Wallace
  11. 6,468,856 (2002) High charge storage density integrated circuit capacitor R.M.Wallace, G.D.Wilk, M.Anthony, D-L. Kwong
  12. 6,436,801 (2002) Hafnium Nitride Gate Dielectric
    G.D.Wilk and R.M.Wallace
  13. 6,420,729 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
    R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  14. 6,335,238 (2002) Integrated dielectric and method
    S.V.Hanttangady, R.M.Wallace, B.E.Gnade and Y.Okuno
  15. 6,291,867 (2001) Zirconium and/or hafnium silicon-oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  16. 6,291,866 (2001) Zirconium and/or hafnium oxynitride gate dielectric R.M.Wallace, R.A.Stolz and G.D. Wilk
  17. 6,277,681 (2001) Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
    R.M.Wallace, G.D. Wilk, Y.Wei and S.V.Hattangady
  18. 6,274,510 (2001) Low temperature methods for forming high quality silicon-nitrogen dielectrics
    G.D. Wilk, J.M.Anthony, Y.Wei and R.M.Wallace
  19. 6,258,637 (2001) Method for thin film deposition on single-crystal semiconductor substrates
    G.D. Wilk, Y.Wei and R.M.Wallace
  20. 6,245,606 (2001) Low Temperature method for forming a thin, uniform layer of aluminum oxide
    G.D. Wilk and R.M.Wallace
  21. 6,159,829 (2000): Memory device using movement of protons
    W. L. Warren, K.L.Vanheusden, D.M.Fleetwood, R.A.B.Devine, L.B.Archer, G.A.Brown, R.M.Wallace
  22. 6,150,242 (2000): Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode J.P.Van der Wagt, G.D.Wilk and R.M.Wallace
  23. 6,143,634 (2000): Semiconductor process with deuterium predominance at high temperature
    R.M.Wallace and P.J.Chen
  24. 6,140,243 (2000): Low temperature process for post-etch defluoridation of metals
    R.M.Wallace, P.J.Chen, S.C.Baber, S.A.Henck
  25. 6,071,751 (2000): Deuterium Sintering with Rapid Quenching
    R.M.Wallace and K.C.Harvey
  26. 6,040,230 (2000): Method of forming a nano-rugged silicon-containing layer J.M.Anthony, R.M.Wallace, Y.Wei and G.D.Wilk
  27. 6,024,801 (2000): Method of cleaning and treating a semiconductor device including a micromechanical device.
    R.M.Wallace and M.A.Douglas
  28. 6,020,247 (2000): Method for thin film deposition on single-crystal semiconductor substrates
    G.D.Wilk, Y.Wei and R.M.Wallace
  29. 6,020,243 (2000): Zirconium and/or Hafnium Silicon-Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  30. 6,013,553 (2000): Zirconium and/or Hafnium Oxynitride Gate Dielectric R.M.Wallace, R.A.Stolz and G.D.Wilk
  31. 5,830,532 (1998): Method to Produce Ultrathin Porous Silicon-Oxide Layer S.Tang, R.M.Wallace, and Y.Wei
  32. 5,689,151 (1997): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, J.M.Anthony, C.-C.Cho, B.E. Gnade
  33. 5,614,785 (1997): Anode plate for Flat Panel Display having silicon getter R.M.Wallace, B.E.Gnade and W.P.Kirk
  34. 5,610,438 (1997): Micro-mechanical device with non-evaporable getter R.M.Wallace and D.A.Webb
  35. 5,606,177 (1997): Silicon oxide resonant tunneling diode structure
    R.M.Wallace and A. C. Seabaugh
  36. 5,523,878 (1996): Self-Assembled Monolayer Coating for Micro-Mechanical Devices
    R.M.Wallace, D.A.Webb and B.E.Gnade
  37. 5,520,563 (1996): Method of making a field emission device anode having an integrated getter
    R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  38. 5,512,374 (1996): PFPE Coatings for Micro-mechanical Devices R.M.Wallace, S.A.Henck and D.A.Webb
  39. 5,482,564 (1996): Method of Unsticking Components of Micro-mechanical Devices
    M.A.Douglas and R.M.Wallace
  40. 5,453,659 (1995): Anode plate for Flat Panel Display having integrated getter R.M.Wallace, B.E. Gnade, C.C. Shen, J. D.Levine, and R.H. Taylor
  41. 5,352,330 (1994): Process for Producing Nanometer-Size Structures on Surfaces Using Electron Beam Induced Chemistry through Electron Stimulated Desorption R.M.Wallace
  42. 5,316,793 (1994): Directed Effusive Beam Atomic Layer Epitaxy System and Method
    R.M.Wallace and B.E.Gnade

 

 
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