http://www.mse.utdallas.edu/index.html
Faculty
Professors: Yves Chabal, Bruce E. Gnade, Moon J. Kim, Robert M. Wallace
Associate Professors: Jiyoung Kim
Affiliated Faculty: Kenneth J. Balkus (Chemistry), Ray H. Baughman (Chemistry), Cyrus D. Cantrell
(Electrical Engineering), Kyeongjae Cho (Physics), Santosh R. D'Mello (Biology),
Rockford K. Draper (Biology), John P. Ferraris (Chemistry), Yuri Gartstein (Physics), Robert Glosser (Physics), Juan E. Gonz�lez (Biology), Steven R. Goodman (Biology), Wenchuang Hu (Electrical
Engineering), Gil S. Lee (Electrical Engineering), Jeong-Bong
Lee (Electrical Engineering), Sanjeev K. Manohar (Chemistry), Inga Holl Musselman
(Chemistry), Lawrence J. Overzet (Electrical Engineering), Eric Vogel
(Electrical Engineering), Anvar A. Zakhidov (Physics)
Adjunct Faculty:� H. Edwards (Texas Instruments), E. Forsythe
(Army Research Laboratory), R. Irwin (Texas Instruments), M. Quevedo-Lopez
Objectives
The program leading
to the M.S. degree in materials science and engineering provides
intensive preparation for professional practice in modern materials science by
those engineers who wish to continue their education. Courses are offered at a
time and location convenient for the student who is employed on a full-time
basis.
The objective of the
doctoral program in materials science and engineering is to prepare individuals
to perform original, cutting edge research in the broad areas of
materials science, including areas such as nano-structured
materials, electronic, optical and magnetic materials, bio-mimetic
materials, polymeric materials, MEMS materials and
systems, organic electronics, and advanced processing of modern materials.�
Facilities
The
University of Texas at Dallas has recently undergone a
substantial growth in materials characterization and synthesis
capabilities.� This capability will
provide graduate students with tools uniquely suited to engage in
research areas of modern materials science and engineering.
Nanoelectronic Materials Research Laboratory
A
unique multi-module cluster tool is utilized for the fabrication and
characterization of thin films in the Nanoelectronic
Materials Research Laboratory.� The system is
capable of thin film deposition using PVD and CVD methods including electron
beam evaporation, molecular beam deposition, atomic layer deposition, sputter
deposition and thermal evaporation methods. Additionally, in-situ characterization techniques include angle-resolved
monochromatic x-ray and ultraviolet photoelectron spectroscopy, Auger electron
spectroscopy, atomic force and scanning tunneling microscopy/spectroscopy.� The system utilizes 100mm diameter wafers
(for cleanroom process compatibility), and modified
sample plates for the various deposition and characterization techniques.� Wafers are transported throughout the system
in a UHV transfer tube.� Each deposition
module has heating and rotational capability for the study of film uniformity
and growth kinetics. �The laboratory
housing the tool is also equipped with wet chemical preparation facilities for
wafer surface preparation.
Surface Optical Spectroscopy Laboratory
This new
facility features FTIR, Raman, Ellipsometry and UV-Vis
spectroscopy equipment configured to study surfaces, interfaces. and ultra-thin films in controlled environments. These
instruments are therefore mounted on ultra-high vacuum chambers with standard
UHV characterization tools, such as low energy electron diffraction, Auger
electron spectroscopy and Mass spectrometry, or on high reaction chambers, such
as Atomic Layer Deposition reactors.
Advanced Electron Microscopy Laboratory
Focused
Ion Beam /Scanning Electron Microscopy
The
focused ion beam system is a FEI Nova 200 NanoLab
which is a dual column SEM/FIB.� It
combines ultra-high resolution field emission scanning electron microscopy
(SEM) and focused ion beam (FIB) etch and deposition for nanoscale
prototyping, machining, 2-D and 3-D characterization, and analysis.� Five gas injection systems are available for
deposition (e.g. Pt, C, SiO2) and etching
(e.g. Iodine for metals, and a dielectric etch).� Nanoscale chemical
analysis is done with energy dispersive X-ray spectroscopy
(EDS).� A high resolution digital
patterning system controlled from the User Interface is also available.� Predefined device structures in Bitmap format
can be directly imported to the patterning system for nanoscale
fabrication.� The FEI Nova 200 is also
equipped with a Zyvex F100 nano-manipulation
stage, which includes four manipulators with 10 nm positioning resolution.� The four manipulators can be fitted with
either sharp whisker probes for electrically probing samples or microgrippers for manipulating nanostructures as small as 10
nanometers.� This is the first instrument
of its kind in the world that combines a dual beam FIB with the F100 nanomanipulator, providing unparalleled nanofabrication and
nanomanipulation.
High-Resolution
Transmission Electron Microcopy
The
facility operates and maintains two state-of-the-art transmission electron
microscopes (TEM), and a host of sample preparation equipments.� It also provides microscopy computing and
visualization capabilities.� Techniques
and equipment available includes the following:�
(i) High Resolution Structural Analysis - The high-resolution imaging TEM is
a JEOL 2100 F which is a 200kV field emission TEM.� Its capability includes atomic scale
structural imaging with a resolution of better than 0.19 nm, and in-situ
STM/TEM.� (ii) High Resolution Chemical and
Electronic Structure Analysis - High resolution analytical
TEM is a second JEOL 2100F field emission TEM/STEM equipped with an energy
dispersive x-ray spectrometer (EDS), an electron energy loss spectrometer
(EELS), and a high angle Z-contrast imaging detector.� This instrument performs chemical and
electronic structure analysis with a spatial resolution of better than 0.5 nm
in EELS mode and is also capable of spectrum imaging and mapping.� The image resolution in the chemically
sensitive Z-contrast scanning TEM (STEM) mode will be about 0.14 nm.� Its capability also includes in-situ
cryogenic cooling and heating, and a computer control system for remote
microscopy operation.
X-ray Diffraction
Suite
A Rigaku Ultima
III X-ray Diffractometer system is available for thin
film diffraction characterization. The system is equipped with a cross beam
optics system to permit either High-resolution parallel beam with a motor
controlled multilayer mirror, or a Bragg-Brentano Para-Focusing beam (without
the multilayer mirror) which are permanently mounted, pre-aligned and user
selectable with no need for any interchange between components. Curved graphite
crystal or Ge monochrometers
are also available. An integrated annealing attachment permits the in-situ examination of film structure up
to 1500�C. The instrument enables a variety of applications including in-plane
and normal geometry phase identification, quantitative analysis, lattice parameter
refinement, crystallite size, structure refinement, residual stress, density,
roughness (from reflectivity geometries), and depth-controlled phase
identification.� Detection consists of a
computer controlled scintillation counter. Sample sizes up to 100 mm in
diameter can be accommodated on this system.�
A new Rigaku Rapid Image Plate Diffractometer system is also available for small spot
(30mm - 300mm) XRD work. The digital image plate system enables the acquisition
of diffraction data over a 204� angle with a rapid laser scanning readout system.An integrated annealing attachment permits the in-situ
examination of film structure up to 900C on this system. A complete set of new
control, database and analysis workstations and software is associated with
these new systems.
Wafer Bonding Laboratory
An
UHV wafer bonding unit, especially designed to use surface characterization and
thin-film deposition techniques to measure and control substrate and interface
chemistry within limits necessary to make heterojunction
devices, is available to produce integrated heterostructures
with well controlled chemistry that are tractable for quantitative nanostructural and properties measurements.� This unit is capable of
synthesizing interfaces by direct wafer bonding and/or in-situ thin film
deposition method, and offers greater flexibility for producing advanced
integrated artificial structures.� It
consists of five interconnected ultra high vacuum (UHV) chambers for in-situ surface
preparation and analysis, addition of interface interlayers
by e-beam or UHV sputter deposition, a bonding chamber, and a sample entry and
preparation chamber. �The base pressure is 2x10-10 Torr.� Orientation of
the bonded pairs can be controlled to ~ 0.1 degree prior to bonding.� Ex-situ surface preparations using etching
and low energy reactive plasma cleaning is done in a cleanroom
to protect substrates prior to insertion in the bonding instrument.� An atomic force microscopy (AFM) is also
available to provide direct measurements of these effects, to supplement the
indirect information of RHEED.
Computational Materials Science Laboratory
Materials
modeling software tools and hardware facilities are available for nanoscale materials research. Atomistic modeling software
tools are used for structure and dynamic analysis of diverse material systems
at nanoscales, and the examples include nanoelectronic materials and nanomaterials
for renewable energy applications. For quantum mechanical analysis of
materials, density functional theory (DFT) software tools (VASP, ABINIT, PWSCF,
and SIESTA) are used on local parallel computing cluster. In-house quantum
transport modeling software tool is used for I-V calculation of nanoelectronic devices using the non-equilibrium Green�s
function (NEGF) method. These software and hardware tools are also used for
class projects of MSEN 5377.�
Cleanroom Research Laboratory
The
new cleanroom facility located in the Natural Science
and Engineering Research Laboratory (http://www.utdallas.edu/eecs/cleanroom/)
is utilized for materials and device research.� The facility has 5,000 sq. ft. of class
10,000 space.� This facility contains
semiconductor processing equipment including optical and e-beam lithography, chemical
processing hoods, evaporation and sputter deposition systems, as well as a wide
variety of material and processing diagnostics.�
In
addition to the facilities on campus, cooperative arrangements have been
established with many local industries to make their facilities available to
U.T. Dallas graduate engineering students.
Master of Science in Materials Science and Engineering
Admission Requirements
The
University�s general admission requirements are discussed here.
A student
lacking undergraduate prerequisites for graduate courses in Materials Science
and Engineering must complete these prerequisites
or receive approval from the graduate adviser and the course instructor.
A diagnostic
exam may be required. Specific admission requirements follow.
The student
entering the MSEN program should meet the following guidelines:
�
Student
has met standards equivalent to those currently required for admission to the
Ph.D. or Master�s degree programs in Electrical Engineering, Chemistry,
Physics, or Biology.�
�
a
grade-point average in graduate-level course work of 3.5 or better on a 4-point
scale
�
GRE
scores of 500, 700 and 4 for the verbal, quantitative and analytical writing
components, respectively, are advisable based on our experience with student
success in the program.
Students who fulfill some of
the above requirements, if admitted conditionally, will be required to take
graduate level courses as needed to make up any deficiencies.
Degree Requirements
The
University�s general degree requirements are discussed here.
The MSEN M.S. degree
requires a minimum of 33 semester hours.
All students
must have an academic advisor and an approved degree plan. These are based upon
the student�s choice of concentration. Courses taken without advisor approval
will not count toward the 33 semester-hour requirement. Successful completion
of the approved course of studies leads to the M.S. degree.
M.
S. students undertaking the thesis option must carry out a research project
under the direction of a member of the Materials Science and Engineering
Affiliated Faculty and complete and defend a thesis on the research
project.� A Supervisory Committee will be
appointed once the faculty member accepts the student for a research project.
The rules for the thesis defense are specified by the Office of the Dean of
Graduate Studies.
For
each of the proposed degree programs, students must pass the following core
courses with a grade of B or better:
Note:
the presence of a course number in parentheses indicates that this course will
be cross-listed with an existing course.
�
MSEN
5310 Thermodynamics of Materials���
�
MSEN
5360 Materials Characterization��
�
MSEN 6324 (EE 6324)
Electronic, Optical and Magnetic Materials
�
MSEN
6319 Quantum Mechanics for Materials Scientists
A student may petition for waiver of
core courses, and if the Materials Science and Engineering Affiliated Faculty,
or a designated committee, finds that the student has mastered the course
material, the student may replace that core course with an elective course for
a total of twelve semester credit hours.
A minimum of 9
semester credit hours will be required from the Advanced Course List
�
MSEN
5340 Advanced Polymer Science and Engineering��
�
MSEN
5370 Ceramics and Metals��
�
MSEN
(5377) (PHYS 5377) Computational Physics of Nanomaterials
�
MSEN
6310 Mechanical Properties of Materials
�
MSEN
6330 Phase Transformations
�
MSEN
6350 Imperfections in Solids�
�
MSEN
6377 (PHYS 6377) Physics of Nanostructures: Carbon Nanotubes,
Fullerenes, Quantum Wells, Dots and Wires
The remaining credit
hours are to be taken from the following list of Specialized Courses (or
approved electives from Physics, Chemistry, or Biology):
�
MSEN 5300 Introduction to Materials
Science��
�
MSEN 5331 (CHEM 5331) Advanced
Organic Chemistry I
�
MSEN 5333 (CHEM 5333) Advanced
Organic Chemistry II
�
MSEN 5341 (CHEM 5341) Advanced
Inorganic Chemistry
�
MSEN 5344 Thermal Analysis��
�
MSEN 5353 Integrated Circuit
Packaging��
�
MSEN 5355 (CHEM 5355) Analytical
Techniques I
�
MSEN 5356 (CHEM 5356) Analytical
Techniques II
�
MSEN 5361 Fundamentals of Surface
and Thin Film Analysis��
�
MSEN 5371 (PHYS 5371) Solid State
Physics
�
MSEN 5375 (PHYS 5375) Electronic
Devices Based On Organic Solids
�
MSEN 5383 (PHYS 5383 and EE 5383)
Plasma Technology
�
MSEN 5410 (BIOL 5410) Biochemistry
of Proteins and Nucleic Acids
�
MSEN 5440 (BIOL 5440) Cell Biology
�
MSEN 6313 (EE 6313) Semiconductor Opto-Electronic Devices
�
MSEN 6320 (EE6320) Fundamentals of
Semiconductor Devices
�
MSEN 6321 (EE6321) Active Semiconductor
Devices
�
MSEN 6322 (EE6322) Semiconductor
Processing Technology
�
MSEN 6340 Advanced Electron
Microscopy��
�
MSEN 6341 Advanced Electron
Microscopy Laboratory
�
MSEN 6358 (BIOL 6358) Bionanotechnology�����
�
MSEN 6361 Deformation Mechanisms in Solid Materials��
�
MSEN 6362 Diffraction Science���
�
MSEN 6371 (PHYS6371) Advanced Solid
State Physics
�
MSEN 6374 (PHYS6374) Optical
Properties Of Solids
�
MSEN 7320 (EE7320) Advanced
Semiconductor Device Theory
�
MSEN 7382 (EE7382) Introduction to
MEMS
�
MSEN 7V80 Special Topics in
Materials Science and Engineering���
�
MSEN 8V40 Individual Instruction in
Materials Science and Engineering��
�
MSEN 8V70 Research In Materials
Science and Engineering��
�
MSEN 8V98 Thesis��
Doctor of Philosophy in Materials
Science and Engineering
Admission Requirements
The
University�s general admission requirements are discussed here.
A student
lacking undergraduate prerequisites for graduate courses in Materials Science
and Engineering must complete these
prerequisites or receive approval from the graduate adviser and the course
instructor.
A diagnostic
exam may be required. Specific admission requirements follow.
The student
entering the MSEN program should meet the following guidelines:
�
Student
has met standards equivalent to those currently required for admission to the
Ph.D. or Master�s degree programs in Electrical Engineering, Chemistry,
Physics, or Biology. �
�
a
grade-point average in graduate-level course work of 3.5 or better on a 4-point
scale
�
GRE
scores of 500, 700 and 4 for the verbal, quantitative and analytical writing
components, respectively, are advisable based on our experience with student success
in the program.
Students who fulfill some of
the above requirements, if admitted conditionally, will be required to take
graduate level courses as needed to make up any deficiencies.
Degree Requirements
The
University�s general degree requirements are discussed here.
The MSEN
Ph.D. requires a minimum of 60 semester hours beyond the Master�s degree.
All students
must have an academic advisor and an approved degree plan. Courses taken
without advisor approval will not count toward the 60 semester-hour
requirement. Successful completion of the approved course of studies leads to
the MSE.
Each
doctoral student must carry out original research in the area of Materials
Science and Engineering, under the direction of a member of the Materials
Science and Engineering Affiliated Faculty, and complete and defend a
dissertation on the research project.� A
Supervisory Committee will be appointed once the faculty member accepts the
student for a research project. Students must be admitted to doctoral candidacy
by passing a Qualifying Exam, which will be administered at approximately the
time that the students have completed their course work.� The rules for the dissertation research and
defense are specified by the Office of the Dean of Graduate Studies.
For
each of the proposed degree programs, students must pass the following core
courses with a grade of B or better:
Note:
the presence of a course number in parentheses indicates that this course will
be cross-listed with an existing course.
�
MSEN
5310 Thermodynamics of Materials���
�
MSEN
5360 Materials Characterization��
�
MSEN
6319� Quantum Mechanics for Materials Scientists
�
MSEN 6324 (EE 6324)
Electronic, Optical and Magnetic Materials
A student may petition for waiver of
core courses, and if the Materials Science and Engineering Affiliated Faculty,
or a designated committee, finds that the student has mastered the course
material, the student may replace that core course with an elective course for
a total of twelve semester credit hours.
A minimum of 9
semester credit hours will be required from the Advanced Course List
�
MSEN
5340 Advanced Polymer Science and Engineering��
��������
�
MSEN
5370 Ceramics and Metals��
�
MSEN
(5377) (PHYS 5377) Computational Physics of Nanomaterials
�
MSEN
6310 Mechanical Properties of Materials�
�
MSEN
6330 Phase Transformations��
�
MSEN
6350 Imperfections in Solids��
�
MSEN
6377 (PHYS 6377) Physics of Nanostructures: Carbon Nanotubes,
Fullerenes, Quantum Wells, Dots and Wires
The remaining credit
hours are to be taken from the following list of Specialized Courses (or
approved electives from Physics, Chemistry, or Biology):
�
MSEN 5300 Introduction to Materials
Science��
�
MSEN 5331 (CHEM 5331) Advanced
Organic Chemistry I
�
MSEN 5333 (CHEM 5333) Advanced
Organic Chemistry II
�
MSEN 5341 (CHEM 5341) Advanced
Inorganic Chemistry
�
MSEN 5344 Thermal Analysis��
�
MSEN 5353 Integrated Circuit
Packaging��
�
MSEN 5355 (CHEM 5355) Analytical
Techniques I
�
MSEN 5356 (CHEM 5356) Analytical
Techniques II
�
MSEN 5361 Fundamentals of Surface
and Thin Film Analysis��
�
MSEN 5371 (PHYS 5371) Solid State
Physics
�
MSEN 5375 (PHYS 5375) Electronic
Devices Based On Organic Solids
�
MSEN 5383 (PHYS 5383 and EE 5383)
Plasma Technology
�
MSEN 5410 (BIOL 5410) Biochemistry
of Proteins and Nucleic Acids
�
MSEN 5440 (BIOL 5440) Cell Biology
�
MSEN 6313 (EE 6313) Semiconductor Opto-Electronic Devices
�
MSEN 6320 (EE6320) Fundamentals of
Semiconductor Devices
�
MSEN 6321 (EE6321) Active
Semiconductor Devices
�
MSEN 6322 (EE6322) Semiconductor
Processing Technology
�
MSEN 6340 Advanced Electron
Microscopy��
�
MSEN 6341 Advanced Electron
Microscopy Laboratory
�
MSEN 6358 (BIOL 6358) Bionanotechnology��
�
MSEN 6361 Deformation Mechanisms in Solid Materials��
�
MSEN 6362 Diffraction Science���
�
MSEN 6371 (PHYS6371) Advanced Solid
State Physics
�
MSEN 6374 (PHYS6374) Optical
Properties Of Solids
�
MSEN 7320 (EE7320) Advanced
Semiconductor Device Theory
�
MSEN 7382 (EE7382) Introduction to
MEMS
�
MSEN 7V80 Special Topics in
Materials Science and Engineering���
�
MSEN 8V40 Individual Instruction in
Materials Science and Engineering��
�
MSEN 8V70 Research In Materials
Science and Engineering��
�
MSEN 8V98 Thesis� �
�
MSEN
8V99 Dissertation��