Eric M. Vogel
Adjunct Professor, Georgia Tech
Education
1998 PhD Electrical Engineering, North Carolina State University
1996 MS Electrical Engineering, North Carolina State University
1994 BS Electrical Engineering, Pennsylvania State University
Research Summary
Historically, integrated electronics has focused primarily on scaling the dimension of silicon-based devices. Until recently, very little has changed in the materials and design of these silicon devices. Alternative materials (e.g. high-k gate dielectrics, III-V semiconductors) and device structures (e.g. silicon nanowires) are now required to continue device scaling. Furthermore, as silicon technology approaches its limits, entirely new materials (e.g. graphene) and computational paradigms (e.g. neuro-inspired) will be critical to continuing the acceleration of the rate of technical change. Although increasing computational speed will likely continue for the foreseeable future, new paradigms are becoming as or more important. The concept of functional electronic materials where new functionality (e.g. chemical or biological sensing) is performed on a silicon platform is an increasingly important paradigm. One theme that pervades these seemingly disparate emerging technologies is that the electronic properties of the devices are extremely sensitive to the structural and physical properties of their constituent materials. I am interested in pursuing broad-based, cross-disciplinary research that spans the development and fundamental understanding of electronic materials and devices in the following areas: III-V semiconductors, graphene, silicon nanoribbon chemical and biological sensors, and neuromorphic devices.
Selected Publications
- Selected publications
- P. G. Fernandes, O. Seitz, R. A. Chapman, H. J. Stiegler, H.-C. Wen, Y. J. Chabal, and E. M. Vogel, "Effect of mobile ions on ultrathin silicon-on-insulator-based sensors," Applied Physics Letters 97, 034103 (2010)
- A. Venugopal, L. Colombo, and E. M. Vogel, "Contact Resistance in Few and Multilayer Graphene Devices," Applied Physics Letters 96, 013512 (2010)
- C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, "Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning," Applied Physics Letters 94, 162101 (2009)
- E. M. Vogel, "Technology and metrology of new electronic materials and devices," Nature Nanotechnology 2, 25-32 (2007). *invited.
- S.-M. Koo, M. D. Edelstein, Q. Li, C. A. Richter, and E. M. Vogel, "Silicon nanowires as enhancement-mode Schottky-barrier field-effect transistors," Nanotechnology 16, 1482-1485 (2005).

