http://www.mse.utdallas.edu/index.html
Faculty
Professors: Kenneth
J. Balkus
(Chemistry), Ray H. Baughman (Chemistry), Cyrus D. Cantrell (EE), Rockford
K. Draper (Biology), John P. Ferraris (Chemistry), Robert Glosser (Physics), Bruce E. Gnade, Steven R. Goodman (Biomedical), Moon J. Kim, Gil S. Lee
(EE), Alan G.
MacDiarmid (Chemistry), Lawrence J. Overzet (EE), Robert M. Wallace, Anvar A. Zakhidov (Physics)
Associate Professors: Santosh R. D'Mello (Biology), Yuri
Gartstein
(Physics), Juan E. Gonz�lez (Biology), Jiyoung Kim, Jeong-Bong Lee (EE), Sanjeev K. Manohar (Chemistry), Inga Holl Musselman
(Chemistry)
Assistant
Professors:
Adjunct Professor:� H.
Edwards (TI), E.Forsythe (ARL), R. Irwin (TI), M.Quevedo-Lopez (TI)
Objectives
The program leading to the M.S. degree in materials science and engineering provides intensive preparation for professional practice in
modern materials science by those engineers who wish to continue their
education. Courses are offered at a time and location convenient for the
student who is employed on a full-time basis.
The objective of the doctoral program in materials science and engineering is to prepare individuals to perform
original, cutting edge research in the broad areas of materials science, including areas such as nano-structured materials, electronic, optical and magnetic
materials, bio-mimetic materials, polymeric materials, MEMS materials and systems, organic electronics, and advanced
processing of modern materials.�
Facilities
The
UHV Deposition and Characterization
Cluster Tool
A new, unique multi-module cluster tool is now available at UTD for the
fabrication and characterization of thin films.�
The system is capable of thin film deposition
using PVD methods including electron beam evaporation, molecular beam
deposition, sputter deposition and thermal evaporation methods. Additionally, in-situ characterization techniques
include angle-resolved monochromatic x-ray and ultraviolet photoelectron
spectroscopy, Auger electron spectroscopy, atomic force and scanning tunneling
microscopy/spectroscopy.� The system
utilizes 100mm diameter wafers (for cleanroom process compatibility), and
modified sample plates for the various deposition and characterization
techniques.� Wafers are transported
throughout the system in a UHV transfer tube.�
Each deposition module has heating and rotational capability for the
study of film uniformity and growth kinetics. �The laboratory housing the tool is also equipped with
wet chemical preparation facilities for wafer surface preparation.
Focused Ion Beam /Scanning Electron
Microscopy
The focused ion beam system
is a FEI Nova 200 NanoLab which is a dual column SEM/FIB.� It combines ultra-high resolution field
emission scanning electron microscopy (SEM) and focused ion beam (FIB) etch and
deposition for nanoscale prototyping, machining, 2-D and 3-D characterization,
and analysis.� Five gas injection systems
are available for deposition (e.g. Pt, C, SiO2) and etching (e.g.
Iodine for metals, and a dielectric etch).�
Nanoscale chemical analysis is done with
energy dispersive X-ray spectroscopy (EDS).�
A high resolution digital patterning system controlled from the User
Interface is also available.� Predefined
device structures in Bitmap format can be directly imported to the patterning
system for nanoscale fabrication.� The
FEI Nova 200 is also equipped with a Zyvex F100 nano-manipulation stage, which
includes four manipulators with 10 nm positioning resolution.� The four manipulators can be fitted with
either sharp whisker probes for electrically probing samples or microgrippers
for manipulating nanostructures as small as 10 nanometers.� This is the first instrument of its kind in
the world that combines a dual beam FIB with the F100 nanomanipulator,
providing unparalleled nanofabrication and nanomanipulation.
High-Resolution Transmission Electron
Microcopy
The facility operates and
maintains two state-of-the-art transmission electron microscopes (TEM), and a
host of sample preparation equipments.�
It also provides microscopy computing and visualization
capabilities.� Techniques and equipment
available includes the following:� (i) High
Resolution Structural Analysis - The high-resolution imaging TEM is a JEOL 2100 F which is a
200kV field emission TEM.� Its capability
includes atomic scale structural imaging with a resolution of better than 0.19
nm, and in-situ STM/TEM.� (ii) High
Resolution Chemical and Electronic Structure Analysis - High
resolution analytical TEM is a second JEOL 2100F field emission TEM/STEM
equipped with an energy dispersive x-ray spectrometer (EDS), an electron energy
loss spectrometer (EELS), and a high angle Z-contrast imaging detector.� This instrument performs chemical and
electronic structure analysis with a spatial resolution of better than 0.5 nm
in EELS mode and is also capable of spectrum imaging and mapping.� The image resolution in the chemically
sensitive Z-contrast scanning TEM (STEM) mode will be about 0.14 nm.� Its capability also includes in-situ
cryogenic cooling and heating, and a computer control system for remote microscopy
operation.
X-ray Diffraction Suite
A Rigaku Ultima
III X-ray Diffractometer system is available for thin film diffraction
characterization. The system is equipped
with a cross beam optics system to permit either High-resolution parallel beam
with a motor controlled multilayer mirror, or a Bragg-Brentano Para-Focusing
beam (without the multilayer mirror) which are permanently mounted, pre-aligned
and user selectable with no need for any interchange between components. Curved
graphite crystal or Ge monochrometers are also available. An
integrated annealing attachment permits the in-situ
examination of film structure up to 1500�C. The instrument enables a variety of applications including
in-plane and normal geometry phase identification, quantitative analysis,
lattice parameter refinement, crystallite size, structure refinement, residual
stress, density, roughness (from reflectivity geometries), and depth-controlled
phase identification.� Detection consists
of a computer controlled scintillation counter. Sample sizes up to 100 mm in
diameter can be accommodated on this system.�
A new Rigaku Rapid Image Plate Diffractometer system is also available
for small spot (30mm � 300mm) XRD work. The digital image plate
system enables the acquisition of diffraction data over a 204� angle with a
rapid laser scanning readout system.An
integrated annealing attachment permits the in-situ
examination of film structure up to 900C on this system. A complete set of new control, database and
analysis workstations and software is associated with these new systems.
Wafer Bonding Laboratory
An UHV wafer bonding unit,
especially designed to use surface characterization and thin-film deposition
techniques to measure and control substrate and interface chemistry within
limits necessary to make heterojunction devices, is available to produce integrated
heterostructures with well controlled chemistry that are tractable for
quantitative nanostructural and properties measurements.� This unit is
capable of synthesizing interfaces by direct wafer bonding and/or in-situ thin
film deposition method, and offers greater flexibility for producing advanced
integrated artificial structures.� It
consists of five interconnected ultra high vacuum (UHV) chambers for in-situ surface
preparation and analysis, addition of interface interlayers by e-beam or UHV
sputter deposition, a bonding chamber, and a sample entry and preparation
chamber. �The base pressure is 2x10-10
Torr.� Orientation of the bonded pairs
can be controlled to ~ 0.1 degree prior to bonding.� Ex-situ surface preparations using etching
and low energy reactive plasma cleaning is done in a cleanroom to protect
substrates prior to insertion in the bonding instrument.� An atomic force microscopy (AFM) is also
available to provide direct measurements of these effects, to supplement the
indirect information of RHEED.
Cleanroom Research Laboratory
The existing cleanroom
facility located in the Jonsson School of Electrical Engineering and Computer
Science (http://www.utdallas.edu/eecs/cleanroom/) is utilized for initial unit process development.� The total area of this facility is 10,000 sq.
ft., with 5,000 sq. ft. of class 1,000 space.�
This facility contains semiconductor processing equipment including
optical and e-beam lithography, chemical processing hoods, evaporation and
sputter deposition systems, as well as a wide variety of material and
processing diagnostics.� The lithography
component in the cleanroom facility consists of a Quintel contact printer, HTG
contact printer, a Karl Suiss contact printer, and two e-beam lithography
machines.� One e-beam machine specializes
in direct write applications while the other will specialize in photomask fabrication.� These e-beam lithography stations were
donated to UTD by Texas Instruments and have high-resolution columns, (0.12
micron minimum geometries), on a production speed base.� Both positive and negative E-Beam resists are
utilized to minimize write times.� The
Quintel aligner is a G-line contact printer with ~ 1 micron resolution and
backside alignment capability (~1 micron).�
It will accept up 150 mm wafers.�
Exposed resist is developed in 3 versatile �APT� 914 and 915 developers
using spray and spin wet processes.� One
APT can be used to etch the Chrome from photomasks.� This technology is highly flexible for substrates
and can contain up to 99 process programs.�
This tool produces developed substrates nearly free of particles.� The thin-film deposition component of the lab
includes a Uniaxis Plasma Enhanced CVD (up to 150 mm wafer), three E-beam
evaporators (each fitting up to 150 mm wafers) and a four-head sputter
deposition system (designed for 100 mm wafers).�
A �Tystar� Low Pressure Chemical Vapor Deposition reactor is currently
being installed.� The LPCVD is designed
for either 100-150 mm wafers and has 4 tubes.�
It will allow deposition of low stress silicon nitride, polysilicon
(doped and undoped) and silicon dioxide (doped and undoped).� Films can be etched in any of 3 reactive ion
etchers.� These include: a �Technics� RIE
setup for 100-105 mm wafers, a �Plasma Technologies� RIE accommodating up to
150 mm wafers and a �Drytech� Deep-RIE for 100 mm wafers.� There are several anneal and oxidation
furnaces available including 5 Minibrute tube furnaces (100mm) and a new Rapid
Thermal Anneal (RTA) system (up to 200 mm wafers).� The clean room diagnostics include a SEM, a
spectroscopic ellipsometer, optical microscope, profilometer, ALESSI 4 point
probe, a new Cascade Summit series electrical probe station (200 mm capability)
with a chuck heating (to 150�C) and cooling stage (to -65�C)� as well as
associated electrical characterization instrumentation (parameter analyzers, CV
meters, etc.), and a high resolution AFM. The SEM is a Phillips XL-30 tool with
a 4 nm resolution and a EDAX material analysis system capable of handling a
100mm wafer with offset positioning.� The
AFM is a Park Scientific International model LS with two deflection stages, one
with 10 micron travel and the other, 100 micron travel.� The resolution on the AFM is below one
nanometer.� It can then fit the reflectance
curve to accurately estimate film thicknesses and compositions for up to 6
layers.�
In addition to the facilities on campus, cooperative
arrangements have been established with many local industries to make their
facilities available to U.T. Dallas graduate engineering students.
Master of Science in Materials Science and Engineering
Admission Requirements
The University�s general admission
requirements are discussed here.
A student lacking undergraduate prerequisites
for graduate courses in Materials Science and Engineering must complete these prerequisites or receive approval
from the graduate adviser and the course instructor.
A diagnostic exam may be required. Specific
admission requirements follow.
The student entering the MSEN program should
meet the following guidelines:
�
Student has met standards equivalent to those currently
required for admission to the Ph.D. or Master�s degree programs in Electrical
Engineering, Chemistry, Physics, or Biology.�
�
a grade-point average in graduate-level course work of 3.5 or
better on a 4-point scale
�
GRE scores of at least 500, 700 and 600 for the verbal,
quantitative and analytical components, respectively, or 1800 for the total
score.
Students
who fulfill some of the above requirements, if admitted conditionally, will be
required to take graduate level courses as needed to make up any deficiencies.
Degree Requirements
The University�s general degree requirements
are discussed here.
The MSEN M.S. degree
requires a minimum of 33 semester hours.
All students must have an academic advisor
and an approved degree plan. These are based upon the student�s choice of
concentration. Courses taken without advisor approval will not count toward the
33 semester-hour requirement. Successful completion of the approved course of
studies leads to the M.S. degree.
M.
S. students undertaking the thesis option must carry out a research project
under the direction of a member of the Materials Science and Engineering
Affiliated Faculty and complete and defend a thesis on the research
project.� A Supervisory Committee will be
appointed once the faculty member accepts the student for a research project.
The rules for the thesis defense are specified by the Office of the Dean of
Graduate Studies.
For
each of the proposed degree programs, students must pass the following core
courses with a grade of B or better:
Note:
the presence of a course number in parentheses indicates that this course will
be cross-listed with an existing course.
�
MSEN 5310
Thermodynamics of Materials ���
�
MSEN 5360 Materials
Characterization ��
�
MSEN 6324 (EE 6324)
Electronic Materials
�
MSEN 6319 Quantum Mechanics for Materials Scientists
A student may petition for waiver of core
courses, and if the Materials Science and Engineering Affiliated Faculty, or a
designated committee, finds that the student has mastered the course material,
the student may replace that core course with an elective course for a total of
twelve semester credit hours.
A minimum of 9
semester credit hours will be required from the Advanced Course List
�
MSEN 5340 Advanced
Polymer Science and Engineering� ���������
�
MSEN 5370 Ceramics and
Metals ��
�
MSEN 6310 Mechanical
Properties of Materials
�
MSEN 6330 Phase
Transformations ��
�
MSEN 6350
Imperfections in Solids �
�
MSEN 6377 (PHYS 6377) Physics
of Nanostructures: Carbon Nanotubes, Fullerenes, Quantum Wells, Dots and Wires
The remaining credit hours
are to be taken from the following list of Specialized Courses (or approved
electives from Physics, Chemistry, or Biology):
Doctor of Philosophy in Materials Science and
Engineering
Admission Requirements
The University�s general admission
requirements are discussed here.
A student lacking undergraduate prerequisites
for graduate courses in Materials Science and Engineering must complete these prerequisites or receive approval
from the graduate adviser and the course instructor.
A diagnostic exam may be required. Specific
admission requirements follow.
The student entering the MSEN program should
meet the following guidelines:
�
Student has met standards equivalent to those currently
required for admission to the Ph.D. or Master�s degree programs in Electrical
Engineering, Chemistry, Physics, or Biology.�
�
a grade-point average in graduate-level course work of 3.5 or
better on a 4-point scale
�
GRE scores of at least 500, 700 and 600 for the verbal,
quantitative and analytical components, respectively, or 1800 for the total
score.
Students
who fulfill some of the above requirements, if admitted conditionally, will be
required to take graduate level courses as needed to make up any deficiencies.
Degree Requirements
The University�s general degree requirements
are discussed here.
The MSEN Ph.D. requires a minimum of 60
semester hours.
All students must have an academic advisor
and an approved degree plan. Courses taken without advisor approval will not
count toward the 60 semester-hour requirement. Successful completion of the
approved course of studies leads to the MSE.
Each
doctoral student must carry out original research in the area of Materials
Science and Engineering, under the direction of a member of the Materials
Science and Engineering Affiliated Faculty, and complete and defend a
dissertation on the research project.� A
Supervisory Committee will be appointed once the faculty member accepts the
student for a research project. Students must be admitted to doctoral candidacy
by passing a Qualifying Exam, which will be administered at approximately the
time that the students have completed their course work.� The rules for the dissertation research and
defense are specified by the Office of the Dean of Graduate Studies.
For
each of the proposed degree programs, students must pass the following core
courses with a grade of B or better:
Note:
the presence of a course number in parentheses indicates that this course will
be cross-listed with an existing course.
�
MSEN 5310
Thermodynamics of Materials ���
�
MSEN 5360 Materials
Characterization ��
�
MSEN 6319� Quantum Mechanics for Materials Scientists
�
MSEN 6324 (EE 6324)
Electronic Materials
A student may petition for waiver of core
courses, and if the Materials Science and Engineering Affiliated Faculty, or a
designated committee, finds that the student has mastered the course material,
the student may replace that core course with an elective course for a total of
twelve semester credit hours.
A minimum of 9
semester credit hours will be required from the Advanced Course List
�
MSEN 5340 Advanced
Polymer Science and Engineering� ���������
�
MSEN 5370 Ceramics and
Metals ��
�
MSEN 6310 Mechanical
Properties of Materials ��
�
MSEN 6330 Phase
Transformations ��
�
MSEN 6350
Imperfections in Solids ��
�
MSEN 6377 (PHYS 6377) Physics
of Nanostructures: Carbon Nanotubes, Fullerenes, Quantum Wells, Dots and Wires
The remaining credit hours
are to be taken from the following list of Specialized Courses (or approved
electives from Physics, Chemistry, or Biology):
�
MSEN 8V99 Dissertation ��