Plasma-Therm 790 PECVD

The Plasma Enhanced Chemical Vapor Deposition Plasma-Therm 790 PECVD tool is configured to deposit high-quality silicon dioxide and silicon nitride, and amorphous silicon films to temperatures from 100 C to 300 C. The tool was donated to UTD in May 2004 by the Mykrolis Corporation.

 

 

User Manual

Process Data

Low-Stress Nitride

Oxide

Polysilicon
Silicon Carbide

 

Control Charts

Low-Stress Nitride

Oxide

Polysilicon

Silicon Carbide

 

 

Updated: 2014-12-02