The Plasma-Therm III-V's etcher is configured for etching III-V's compound semiconductors using chlorine and fluorine based chemistries. Presently, Cl2, BCl3, HBr, CHF3, SF6, CH4, O2, N2, H2, He, and Ar are installed on the tool. The tool is capable of sample heating up to 180C and is equipped with an end-point detection and thickness monitoring system.

Updated: 2013-04-09