Bhaskar Banerjee received his Ph.D. in Electrical Engineering from Georgia Institute of Technology, Atlanta in 2006. He received his B. Tech. (Honors) degree in Electronics and Electrical Communication Engineering from Indian Institute of Technology, Kharagpur, in 2001, and the M.S. degree in Electrical and Computer Engineering from Georgia Institute of Technology, Atlanta, in 2003.

His research interests include circuit design for radio frequency (RF), microwave and millimeter-wave applications using multi-antenna systems, high-speed analog and mixed-signal circuit design for wireless and wired communications using silicon-based processes; and, modeling, analysis and characterization of RF performance of Si-CMOS and SiGe HBTs. His paper on Low Noise Amplifier design was a nominated for the Best Student Paper Award Competition at the IEEE MTT-S International Microwave Symposium 2003.

He has worked as a mixed-signal circuit designer at IBM Thomas J. Watson Research Center, Yorktown Heights, NY and National Semiconductor Corporation. Previously, he has worked as graduate co-op at RF Solutions which is now a part of Anadigics Inc., and under-graduate intern at Texas Instruments Asia Development Center (India).