1. 1.B. Banerjee, S. Venkataraman, C.-H. Lee, and J. Laskar, “Broadband Noise Modeling of SiGe HBT under Cryogenic Temperatures,” in Dig. IEEE Radio Frequency Integrated Circuits Symp., Honolulu, Hawaii, Jun. 2007.

  2. 2.B. Banerjee, S. Venkataraman, E. Zhao, C.-H. Lee, J. D. Cressler, J. Laskar, B. E.-Kareh, S. Balster, and H. Yasuda, “Broadband Noise in Complementary SiGe HBT Technology for Analog IC Applications,” submitted to IEEE Trans. Electron Devices.

  3. 3. B. Banerjee, S. Venkataraman, E. Zhao, C.-H. Lee, J. D. Cressler, J. Laskar, B. E.-Kareh, S. Balster, and H. Yasuda, “Modeling of Broadband Noise in Complementary (npn + pnp) SiGe HBTs,” in Dig. IEEE RFIC Symp., Long Beach, CA, USA, Jun. 2005.

  4. 4.B. Banerjee, S. Venkataraman, Y. Lu, Q. Liang, C.-H. Lee, S. Nuttinck, Y.-J. E. Chen, D. Heo, J. D. Cressler, J. Laskar, G. Freeman, and D. C. Ahlgren, “Cryogenic Operation of Third-Generation 200-GHz Peak-fT, Silicon-Germanium Heterojunction Bipolar Transistors,” IEEE Trans. Electron Devices, vol. 52, pp. 585-593, Apr. 2005.

  5. 5.B. Banerjee, C.-H. Lee, B. Matinpour and J. Laskar, “A SiGe Dual-Band Dual-Mode RF Front End with Novel Architecture for IEEE 802.11a/b/g Wireless LAN Applications,” in IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp.124-127, 2004.

  6. 6.S. Venkataraman, B. Banerjee, C.-H. Lee, J. Laskar, and J. D. Cressler, “Cryogenic Small Signal Operation of 0.18um MOSFETs,” in IEEE Topical Meeting on Silicon Monolithic Int. Circuits in RF Systems (SiRF) 2007, Long Beach, CA, USA, Jan 2007.

  7. 7.S. Venkataraman, B. Banerjee, C.-H. Lee, J. D. Cressler, J. Laskar, J. Papapolymerou, A. J. Joseph, and S. L. Sweeney, “Broadband Noise Analysis and Modeling of 130 nm nMOSFETs for RFIC Applications,” being submitted to IEEE Trans. Electron Devices.

  8. 8.J. Laskar, M. Tentzeris, J. Papapolymerou, K. Lim, C.-H. Lee, S. Pinel, E. Gebara, S. Nuttinck, R. Li, R. Mukhopadhyay, B. Banerjee, M. Maeng, S. Chakraborty, “Recent Advances in High Performance Communication Modules and Circuits,” in IEEE Microwave Magazine, 2005.

  9. 9.S. Venkataraman, B. Banerjee, C.-H. Lee, J. D. Cressler, J. Laskar, J. Papapolymerou, A. J. Joseph, and S. L. Sweeney, “ The Extraction and Modeling of Intrinsic RF Noise Sources in 0.13um nMOSFETs,” in IEEE MTT-S Int. Microwave Symp., Long Beach, CA, USA, Jun. 2005.

  10. 10.C.-H. Lee, B. Banerjee and J. Laskar, “A Novel DP4T Switch for Dual-band WLAN Applications,” in Proc. IEEE RFIC Symposium, pp. 571-574, 2004.

  11. 11.C.-H. Lee, B. Banerjee and J. Laskar, “Novel T/R Switch Architectures for MIMO Applications”, in Dig. IEEE International Microwave Symposium MTT-S, 2004.

  12. 12.B. Banerjee, S. Venkataraman, Y. Lu, S. Nuttinck, D. Heo, Y.-J. E. Chen, J. D. Cressler, J. Laskar, G. Freeman and D. Ahlgren, “Cryogenic Performance of a 200 GHz SiGe HBT Technology,” Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 171-173, 2003.

  13. 13.B. Banerjee, B. Matinpour, C.-H. Lee, S. Venkataraman, S. Chakraborty and J. Laskar, “Development of IEEE802.11a WLAN LNA in Silicon based Processes,” IEEE International Microwave Symposium MTT-S Digest, vol. 3, pp. 1573-1576, 2003.

  14. 14.A. Raghavan, S. Venkataraman, B. Banerjee, Y. Suh, D. Heo and J. Laskar, “Direct Extraction of an Empirical Temperature-Dependent InGaP-GaAs HBT Large-Signal Model,” IEEE Journal of Solid-State Circuits, vol. 38, pp. 1443-1450, Sep. 2003.

  15. 15.S. Venkataraman, B. M. Haugeraud, E. Zhao, B. Banerjee, A. Sutton, P. W. Marshall, C.-H. Lee, J. D. Cressler, J. Laskar, J. Papapolymerou, and A. J. Joseph, “Impact of Proton Irradiation on the RF Performance of 0.12 um CMOS Technology,” in IEEE Int. Reliability Phys. Symp., San Jose, CA, USA, Apr. 2005.

  16. 16.S. Nuttinck, B. Wagner, B. Banerjee, S. Venkataraman, E. Gebara, J. Laskar and M. Harris, “Thermal Analysis of AlGaN/GaN Power Devices,” IEEE Trans. Micro. Theory and Tech., pp. 2445-2452, vol. 51, no.12, Dec 2003.

  17. 17.S. Nuttinck, E. Gebara, B. Banerjee, S. Venkataraman, J. Laskar and M. Harris, “Applications of GaN Microwave Electronic Devices,” IEICE Transactions on Electronics, Special Issue on Microwave and Millimeter Wave Technology, pp. 1409-1415, vol. E86-C, Aug 2003.

  18. 18.S. Nuttinck, B. Banerjee, S. Venkataraman, J. Laskar and M. Hooper, “High Temperature Performances of AlGaN/GaN Power HFETs,” IEEE International Microwave Symposium MTT-S Digest, pp. 221-223, vol. 1, 2003

  19. 19.A. Raghavan, B. Banerjee, S. Venkataraman, and J. Laskar, “Direct Extraction Technique of InGaP/GaAs HBT Large Signal Model,” in Proc. Asia Pacific Microwave Conference, Japan, 2002.

  20. 20.A. Raghavan, B. Banerjee, S. Venkataraman and J. Laskar, “Direct Extraction of InGaP/GaAs HBT Large Signal Model,” Proc. IEEE GaAs IC Symposium, Monterey, USA, pp. 225-228, 2002.

 

Bhaskar Banerjee

THE UNIVERSITY OF TEXAS AT DALLAShttp://www.utdallas.edu


Assistant Professor

Department of Electrical Engineering


Office: ECSN 4.518


Tel: 972-883-6459

Fax: 972-883-2710


Email: bhaskar.banerjee [at] utdallas [dot] edu

Research Interests


  1. -Reconfigurable RF Front-end Design for Wireless Applications

  2. -Integrated Circuit Development for MIMO Applications

  3. -Gigabit Wireless Interface

  4. -RF Modeling of nano-scaled CMOS Devices


Selected Publications