Erik Jonsson School of Engineering & Computer Science Materials Science and Engineering UT Dallas
 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Presentations

54. R. Yue, A. Ascatl, C. Buie, S. McDonnell, R. M. Wallace, and C. L. Hinkle, "Contact Resistivity and Chemical Bonding of Metal Contacts on MoS2,"  E-MRS 2013 Spring Meeting, Strasbourg, France (2013).

53. S. McDonnell, A. Ascatl, R. Yue, J. Kim, C. L. Hinkle, and R. M. Wallace, "In-Situ Characterisation of High-k Deposition on 2-D Transistion Metal Dichalcogenides," E-MRS 2013 Spring Meeting, Strasbourg, France (2013).

52. C. L. Hinkle, R. V. Galatage, D. M. Zhernokletov, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace, and E. M. Vogel, "III-V/High-k Defects: DIGS vs. Border Traps," 223rd Electrochemical Society Meeting, Toronto, Canada (2013). INVITED

51. C. L. Hinkle, A. K. Sra, D. E. Arreaga-Salas, J. Rossi, R. Longo, K. Roodenko, K. J. Cho, and Y. J. Chabal, "Chemical Synthesis, Computational Modeling, and Surface Reactions of Silicon Nanotube Anodes and Silicate Cathodes for Lithium Ion Batteries," TMS Annual Meeting, San Antonio, Texas (2013). INVITED

50. S. R. M. Anwar, J. B. Burris, C. Buie, and C. L. Hinkle, "Controlling the Electrostatic Potential of Gate-Last Ge/High-k/Metal Gate Stacks Through Interface Dipole Formation," 40th International Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-40), Waikoloa, Hawaii (2013).

49. J. Mendez, J. Chan, R. A. Chapman, E. M. Vogel, H. Niimi, J. J. Chambers, P. Srinivasan, J. B. Shaw, and C. L. Hinkle, "1/f Noise and Charge-Pumping Investigation of Dit Formation During Gate-Last HfO2/TiN Band Edge Effective Work Function Tuning," 43rd Semiconductor Interface Specialists Conference, San Diego, California (2012).

48. C. Buie, B. Quigley, J. Chan, R. A. Chapman, E. M. Vogel, D. Riley, A. Jain, S. C. Song, K. Y. Lim, J. Blatchford, J. B. Shaw, and C. L. Hinkle, "Internal Photoemission and I-V Investigation of Interface Composition Control for Schottky Barrier Height Lowering of NiPtSi on n-Si Through Incorporation of Yb," 43rd Semiconductor Interface Specialists Conference, San Diego, California (2012).

47. S. Mohammed, M. Nimmo, Y. J. Chabal, A. V. Malko, and C. L. Hinkle, "Chemical Bonding and Defect States of Si Quantum Dots Embedded in Si3N4," 2012 MRS Fall Meeting, Boston, Massachusetts (2012).

46. S. R. M. Anwar, C. Buie, N. Lu, M. Kim, and C. L. Hinkle, "Electrical and Physical Characteristics of High-k/Metal Gate MOS Devices on MBE-Grown Germanium on Silicon Using Aspect Ratio Trapping," 59th AVS International Symposium, Tampa, Florida (2012).

45. R. V. Galatage, D. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "An Investigation into the Origin of Anaomalous Frequency Dispersion in Accumulation Capacitance of MOS Devices on III-V Substrates," 59th AVS International Symposium, Tampa, Florida (2012).

44. C. L. Hinkle, "Chemical Analysis of High-k/III-V Interfaces and Device Impact," 9th International Symposium on Advanced Gate Stack Techology, Saratoga Springs, New York (2012). INVITED

43. A. K. Sra, D. E. Arreaga-Salas, K. Roodenko, Y. J. Chabal, and C. L. Hinkle, "Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries," American Vacuum Society Texas Chapter Conference, Richardson, Texas (2012).

42. A. Jain, C. L. Hinkle, J. Chan, F. J. Mendez-Lopez, R. A. Chapman, E. M. Vogel, D. Riley, S. C. Song,  J. Blatchford, and J. Shaw, "Reduction of NixPt1-xSi Schottky Barrier Height by Yb and Hf Incorporation," American Vacuum Society Texas Chapter Conference, Richardson, Texas (2012).

41. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, "Gate-Last TiN/HfO2 Band Edge Effective Work Functions Using Low-Temperature Anneals and Selective Cladding to Control Interface Composition," American Vacuum Society Texas Chapter Conference, Richardson, Texas (2012).

40. C. L. Hinkle, J. Chan, E. M. Vogel, A. M. Thron, K. van Benthem, R. A. Chapman, D. Riley, S. C. Song, A. Jain, J. Blatchford, and J. Shaw, "Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation," 12th International Workshop on Junction Technology, Shanghai, China (2012). INVITED

39. D. E. Arreaga-Salas, A. K. Sra, E. Roodenko, Y. J. Chabal, and C. L. Hinkle, "SEI formation kinetics on a-silicon nanotube anodes," 220th Electrochemical Society Meeting, Boston, MA (2011).

38. R. V. Galatage, B. Brennan, H. Dong, D. M. Zhernokletov, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of Post Deposition Anneal on the Characteristics of InP MOS Capacitors with High-k Dielectrics," 58th AVS International Symposium, Nashville, TN (2011).

37. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Thermal stability of the InP/high-k dielectric interface," 42nd Semiconductor Interface Specialists Conference, Arlington, VA (2011). 

36. E. M. Vogel, A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, and C. L. Hinkle, "Remote Phonon and Surface Roughness Limited Universal Electron Mobility of In0.53Ga0.47As Surface Channel MOSFETs," 58th AVS International Symposium, Nashville, TN (2011).  INVITED

35. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, R. V. Galatage, W. Wang, K. J. Cho, E. M.Vogel, and R. M. Wallace, "Interface Chemical States and MOSFET Performance of High-k/III-V Devices," 5th International Workshop on High-k Dielectrics on High Carrier Mobility Semiconductors, Hsinchu, Taiwan (2011). INVITED

34. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, "Band-edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS," 219th Electrochemical Society Meeting (ECS), Montreal, Quebec (2011). INVITED

33. C. L. Hinkle, M. Milojevic, B. Brennan, S. McDonnell, A. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M.Vogel, and R. M. Wallace, "High-k Oxide Growth on III-V Semiconductors: Chemical Bonding and MOSFET Performance," 219th Electrochemical Society Meeting (ECS), Montreal, Quebec (2011). INVITED

32. C. L. Hinkle, M. Milojevic, B. Brennan, W. Wang, A. Sonnet, R. V. Galatage, K. J. Cho, E. M.Vogel, and R. M. Wallace, "Interface studies of high-k oxides on III-V semiconductors," 2011 MRS Spring Meeting, San Francisco, CA (2011). INVITED

31. C. L. Hinkle, M. Milojevic, B. Brennan, S. McDonnell, A. Sonnet, D. M. Zhernokletov, R. V. Galatage, E. M.Vogel, and R. M. Wallace, "In-situ Studies of High-k Oxide Growth on III-V Semiconductors," 41st IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA (2010). INVITED

30.  C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt”, 2010 Symposium on VLSI Technology, Honolulu, HI (2010).

29.  A. M. Sonnet, R. V. Galatage, M. Milojevic, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “A study of the impact of surface preparations on the transport characteristics of InxGa1-xAs (x=0.53, 0.65) metal-oxide-semiconductor field effect transistors”, TECHCON 2010, Austin, TX (2010).

28.  E. Vogel, A. Sonnet, R. Galatage, M. Milojevic, C. Hinkle, and R. M. Wallace, “Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs,” Electrochemical Society Meeting (ECS), Vancouver, British Columbia (2010). INVITED

27. C. L. Hinkle, A. M. Sonnet, M. Milojevic, R. M. Wallace, and E. M. Vogel, “The oxidation of III-V interfaces and implications for devices.”, AVS 56th International Symposium and Exhibition, San Jose, CA (2009). INVITED

26. C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace, “Surface studies of III-V materials: oxidation control and device implications.”, 215th Electrochemical Society Meeting (ECS), San Francisco, CA (2009). INVITED

25.  A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Interfacial engineering of  InxGa1-xAs/high-k metal-oxide-semiconductor field-effect-transistors (MOSFETs),” IEEE Integrated Reliability Workshop, South Lake Tahoe, CA (2009). INVITED

24.  J. J. Chambers, H. Niimi, A. Li-Fatou, J. B. Shaw, C. L. Hinkle, H. N. Alshareef, R. A. Chapman, R. V. Galatage, E. M. Vogel, C. Freeman, and E. Wimmer, “Metal gate electrode impurity engineering for control of effective work function”, 6th International Symposium on Advanced Gate Stack Technology (ISAGST), San Francisco, CA (2009). INVITED

23.  A. M. Sonnet, R. V. Galatage, M. N. Jivani, E. O'connor, P. K. Hurley, M. Milojevic, N. Goel, P. Kirsch, J. Huang, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Impact of surface preparations on the transport characteristics of InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs),” 6th International Symposium on Advanced Gate Stack Technology (ISAGST), San Francisco, CA (2009). INVITED

22. C. L. Hinkle, M. Milojevic, B. Brennan, G. J. Hughes, A. M. Sonnet, F. S. Aguirre-Tostado, E. M. Vogel, and R. M. Wallace, “Determining the presence of Ga suboxides and their impact on III-V passivation and Fermi-level pinning”, 36th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Barbara, CA (2009).

21. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “Surface passivation and implications on high mobility channel performance”, 16th Biennial INFOS, Cambridge, UK (2009). INVITED

20. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, J. Kim, R. M. Wallace, B. Brennan, G. J. Hughes, and E. M. Vogel, “Surface states, interface traps, and Fermi level pinning correlation to the interface oxidation states of Ga”, 39th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA (2008).

19. E. M. Vogel, A. M. Sonnet, C. L. Hinkle, F. S. Aguirre-Tostado, M. Milojevic, J. Kim, and R. M. Wallace, “Electrical and Physical Properties of GaAs MOS Devices with Al2O3/a-Si Gate Dielectric Stacks”, 5th International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX (2008). INVITED

18. M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, B. Lee, S. J. McDonnell, K. J. Choi, H. C. Kim, A. M. Sonnet, G. J. Hughes, E. M. Vogel, J. Kim, and R. M. Wallace, “High-k dielectrics for CMOS beyound 22 nm”, 5th Workshop on Dielectrics in Microelectronics (WODIM), Bad Saarow, Germany (2008). INVITED

17. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics”, 15th Workshop on Dielectrics in Microelectronics (WODIM), Bad Saarow, Germany (2008).

16. M. Milojevic, B. Brennan, F. S. Aguirre-Tostado, C. Hinkle, H. C. Kim, G. Hughes, E. M. Vogel, R. M. Wallace, and J. Kim, “In-Situ XPS study of ALD Al2O3 deposition on InxGa1-xAs”, 5th International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX (2008).

15. A. M. Sonnet, C. L. Hinkle, N. Jivani, J. Kim, R. M. Wallace and E. M. Vogel, “Performance Enhancement of n-Channel Invertion Type InxGa1-xAs MOSFET by Effective Surface Passivation Using Ex-Situ Deposited Thin Amorphous Si Layer”, 38th IEEE Semiconductor Interface Specialists Conference (SISC), Washington, D.C. (2008).

14. C. L. Hinkle, M.  Milojevic, S. McDonnell, G. J. Hughes, F. S. Aguirre-Tostado, A. M. Sonnet, B. Lee, K. J. Choi, J. Kim, R. M. Wallace, and E. M. Vogel, “Studies of In-situ GaAs high-k/interface reactions and their effects on electrical characteristics”, 38th IEEE Semiconductor Interface Specialists Conference (SISC), Washington, D.C. (2007) .

13. F. S. Aguirre-Tostado, M. Milojevic, S. McDonnell, R. Contreras-Guerrero, C. L. Hinkle, K. J. Choi, J. Kim, E. M. Vogel, A. Herrera-Gomez, R. M. Wallace, T. Yang, Y. Xuan and P.D. Ye, “Study of surface preparation for high-k dielectrics on GaAs,” 38th IEEE Semiconductor Interface Specialists Conference (SISC), Washington, D.C. (2007).

12. C. L. Hinkle, M.  Milojevic, S. McDonnell, G. J. Hughes, F. S. Aguirre-Tostado, A. M. Sonnet, B. Lee, K. J. Choi, J. Kim, R. M. Wallace, and E. M. Vogel, “GaAs Surface Modification by Arsenic Oxide Removal and Bond Conversion”, 4th International Symposium on Advanced Gate Stack Technology (ISAGST), Dallas, TX (2007).

11. E. M. Vogel, A. M. Sonnet, and C. L. Hinkle, “Characterization of Electrically Active Interfacial Defects in High-κ Gate Dielectrics”, 211th Electrochemical Society Meeting, Chicago, IL (2007). INVITED

10. C. Hinkle, C. Krug, and G. Lucovsky, “Optimization of (a) compound semiconductor/dielectric, and (b) internal dielectric interfaces for GaAs and GaN MOS devices: processing and functionality”, 35th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego (2004).

9. C. Hinkle and G. Lucovsky, "A Novel Approach for Determination of Eb-meff Product for Hi-k Dielectrics", SRC/iSEMATECH FEP Transition Center Review, Raleigh (2003).

8. C. Hinkle and G. Lucovsky, "A Novel Approach for Determination of Tunneling Mass, meff, Conduction Band Offset Energy, Eb, Products for Advanced Gate Dielectrics", 34th IEEE Semiconductor Interface Specialists Conference (SISC), Washington, DC (2003).

7. C. Hinkle and G. Lucovsky, "Enhanced Tunneling in Symmetric Stacked Gate Dielectrics with Ultra-thin HfO2 layers (0.5-1.0 nm) Sandwiched Between Thicker SiO2 layers (1.5 nm)", AVS 50th International Symposium, Baltimore (2003).

6. C. Hinkle and G. Lucovsky, "Enhanced Tunneling in Symmetric Stacked Gate Dielectrics with Ultra-thin HfO2 layers (0.5-1.0 nm) Sandwiched Between Thicker SiO2 layers (1.5 nm)", The 9th International Conference on the Formation of Semiconductor Interfaces (ICFSI-9), Madrid (2003).

5. C. Hinkle and G. Lucovsky, “Remote Plasma Assisted Nitridation of Al2O3 and Zr and Hf Silicate Alloys Films”, TECHCON 2003, Dallas (2003).

4. C. Hinkle and G. Lucovsky, "A Novel Approach for Determining the Effective Tunneling Mass of Electrons in HfO2 and Other High-K Gate Dielectrics", INFOS 2003, Barcelona (2003).

3. C. Hinkle and G. Lucovsky, "Formation of Al Oxynitride Alloys by Low-Temperature Remote Plasma Nitridation", 33rd IEEE Semiconductor Interface Specialists Conference (SISC), San Diego (2002).

2. C. Hinkle and G. Lucovsky, "Controlled Incorporation of Nitrogen in Aluminum Oxide using Remote Plasma Enhanced Chemical Vapor Deposition.", American Vacuum Society Fall Meeting, Denver (2002).

1. Christopher L. Hinkle and John M. Blondin, "Hydrodynamic Instabilities in Young Supernova Remnants.", 11th Annual October Astrophysics Conference in Maryland, College Park, MD (2000).