Publications

Peer Reviewed Journal Articles

59. C. L. Hinkle, R. V. Galatage, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace, and E. M. Vogel, "III-V/High-k Defects: DIGS vs. Border Traps," accepted by ECS Transactions (2013).

58. H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, and R. M. Wallace, "In situ Study of HfO₂ Atomic Layer Deposition on InP (100)," accepted by Applied Physics Letters (2013).

57. J. Chan, M. Balakchiev, A. M. Thron, R. A. Chapman,  D. Riley, S. C. Song, A. Jain, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle, "PtSi Dominated Schottky Barrier Heights of Ni(Pt)Si Contacts Due to Pt Segregation," Applied Physics Letters 102, 123507 (2013).

56. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Electrical and chemical characteristics of Al₂O₃/InP metal-oxide-semiconductor capacitors," Applied Physics Letters 102, 132903 (2013).

55. A. M. Thron, T. J. Pennycook, J. Chan, W. Luo, A. Jain, D. Riley, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle, K. van Benthem, "Direct observation of a pre-silicide layer below Ni_1-xPt_xSi/Si interfaces and the effects on Schottky barrier heights," Acta Materialia 61, 2481 (2013).

54. B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, "In-situ studies of III-V surfaces and high-k atomic layer deposition," Solid State Phenomena 195, 90 (2013).

53. C. L. Hinkle, J. Chan, F. J. Mendez-Lopez, R. A. Chapman, E. M. Vogel, D. Riley, A. Jain, S. C. Song, K. Y. Lim, J. Blatchford, J. B. Shaw, "Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation," Conference Proceedings of the 12th International Workshop on Junction Technology (2012).

52. D. E. Arreaga-Salas, A. K. Sra, E. Roodenko, Y. J. Chabal, and C. L. Hinkle, "Progression of Solid Electrolyte Interphase Formation on Hydrogenated Amorphous Silicon Anodes for Lithium-Ion Batteries," Journal of Physical Chemistry C 116, 9072 (2012).

51. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, "Gate-Last TiN/HfO₂ Band Edge Effective Work Functions Using Low-Temperature Anneals and Selective Cladding to Control Interface Composition," Applied Physics Letters 100, 153501 (2012).

50. S. McDonnell, H. Dong, J. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, "Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems," Applied Physics Letters 100, 141606 (2012).

49. B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, "In-situ Surface Pre-Treatment Study of GaAs and In_0.53Ga_0.47As," Applied Physics Letters 100, 151603 (2012).

48. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO₂/InP metal-oxide-semiconductor capacitors," Applied Physics Letters 99, 172901 (2011).

47. C. L. Hinkle, E. M. Vogel, P. D. Ye, and R. M. Wallace, "Interfacial Chemistry of Oxides on In_xGa_1-xAs and Implications for MOSFET Applications," Current Opinion in Solid State & Materials Science 15, 188 (2011).

46. M. Milojevic, R. Contreras-Guerrero, E. O'Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace, "In-Situ XPS characterization of Ga₂O passivation of In_0.53Ga_0.47As prior to ALD high-k dielectric deposition," Applied Physics Letters 99, 042904 (2011).

45. J. Chan, N. Y. Martinez, J. J. D. Fitzgerald, A. V. Walker, R. A. Chapman, D. Riley, A. Jain, C. L. Hinkle, and E. M. Vogel, "Extraction of Correct Schottky Barrier Height of Sulfur Implanted NiSi/n-Si Junctions: Junction Doping Rather than Barrier Height Lowering," Applied Physics Letters 99, 012114 (2011). 

44. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, and J. B. Shaw, “Band-Edge Effective Work Functions by Controlling HfO₂/TiN Interfacial Composition for Gate-Last CMOS,” ECS Transactions 35, 285 (2011).

43. C. L. Hinkle, B. Brennan, S. McDonnell, M. Milojevic, A. M. Sonnet, D. Zhernokletov, R. V. Glatage, E. M. Vogel, and R. M. Wallace, “High-k Oxide Growth on III-V Surfaces: Chemical Bonding and MOSFET Performance” ECS Transactions 35, 403 (2011).

42. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "On the calculation of effective electric field in In_0.53Ga_0.47As surface channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters 98, 193591 (2011). 

41. W. Wang, C. L. Hinkle, E. M. Vogel, K. Cho, and R. M. Wallace, "Is interfacial chemistry correlated to gap states for high-k/III-V interfaces," Microelectronic Engineering 88, 1061 (2011).

40. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, and E. M. Vogel, "Remote phonon and surface roughness limited universal electron mobility of In_0.53Ga_0.47As surface channel MOSFETs," Microelectronic Engineering 88, 1083 (2011).

39. B. Brennan, M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, G. Hughes, and R. M. Wallace, "Optimisation of the ammonium sulphide (NH₄)₂S passivation process on In_0.53Ga_0.47As," Appl. Surf. Sci. 257, 4082 (2011).

38. A. M. Sonnet, C. L. Hinkle, D. Heh, G. Bersuker, and E. M. Vogel,  “Impact of Semiconductor and Interface State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics,” IEEE Transactions on Electron Devices 57, 2599 (2010).

37. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt”, 2010 Symposium on VLSI Technology, Digest of Technical Papers (2010).

36. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO₂ gate stacks”, Applied Physics Letters 96, 103502 (2010).

35. E. Vogel, A. Sonnet, R. Galatage, M. Milojevic, C. Hinkle, and R. M. Wallace, “Electrical and Physical Properties of High-k Gate Dielectrics on In_xGa_1-xAs,” ECS Transactions 28, 209 (2010).

34. A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, P. Kirsch, J. Huang, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Impact of surface preparations on the transport characteristics of InGaAs metal-oxide-semiconductor field effect transistors (MOSFETs),” Semiconductor Device Research Symposium (2010).

33. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding”, Applied Physics Letters 95, 151905 (2009).

32. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, “Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning”, Applied Physics Letters 94, 162101 (2009).

31. C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace, “Surface studies of III-V materials: Oxidation control and device implications”, ECS Transactions 19, 387 (2009).

30. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “Surface passivation and implications on high mobility channel performance”, Microelectronic Engineering 86, 1544 (2009).

29. C. L. Hinkle, A. M. Sonnet, R. A. Chapman, and E. M. Vogel, “Extraction of the Effective Mobility of In_0.53Ga_0.47As MOSFETs”, IEEE Electron Device Letters 30, 316 (2009).

28. M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al₂O₃ on (NH₄)₂S passivated GaAs(100) surfaces”, Applied Physics Letters 93, 252905 (2008).

27.  M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al₂O₃ on In_0.2Ga_0.8As(100) surfaces”, Applied Physics Letters 93, 202902 (2008).

26. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics”, Applied Physics Letters 93, 113506 (2008).

25. A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, “Performance enhancement of n-channel inversion type In_xGa_1-xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer”, Applied Physics Letters 93, 122109 (2008).

24. F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, and R. M. Wallace, “S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO₂/Al₂O₃ nanolaminates”, Applied Physics Letters 93, 061907 (2008).

23. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace.  “GaAs interfacial self-cleaning by atomic layer deposition.”, Applied Physics Letters 92, 071901 (2008).

22. F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes.  “Indium stability on InGaAs during atomic H surface cleaning.”, Applied Physics Letters 92, 171906 (2008).

21. Y. M. Strzhemechny , M. Bataiev , S. P. Tumakha, S. H. Goss , C. L. Hinkle, C. C. Fulton, G. Lucovsky , and L. J. Brillson.  “Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO₂ and SiO₂–HfO₂–SiO₂–Si stacks.”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, 232 (2008).

20. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace.  “Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation.” Applied Physics Letters 91, 163512 (2007).

19. E. M. Vogel, A. M. Sonnet, and C. L. Hinkle.  “Characterization of electrically active interfacial defects in high-κ gate dielectrics., ECS Transactions 11, 393 (2007).

18. G. Lucovsky, J. Luning, N. A. Stoute, H. Seo, C. L. Hinkle, and B. Ju, "Band Edge Traps at Spectroscopically-Detected O-Atom Vacancies in Nanocrystalline ZrO₂ and HfO₂: An Engineering Solution for Elimination of O-Atom Vacancy Defects in Non-crystalline Ternary Silicate Alloys," ECS Transactions 1, 381 (2006).

17. G. Lucovsky, C.L. Hinkle, C.C. Fulton, N.A. Stoute, H. Seo, and J. Luning.  “Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2.”, Radiation Physics and Chemistry 75, 11 (2006).

16. C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, “Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO₂ (ZrO₂) layers sandwiched between thicker SiO₂ layers.", Applied Surface Science 234, 240 (2004).

15. G. Lucovsky, G.B. Rayner, D. Kang, C.L. Hinkle, and J.G. Hong, “A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys”, Applied Surface Science 234, 429 (2004).

14. C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, "Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO₂ (ZrO₂) layers sandwiched between thicker SiO₂ layers.", Surface Science 566, 1185 (2004).

13. G. Lucovsky, G.B. Rayner, D. Kang, C.L. Hinkle, J.G. Hong, “A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys”, Surface Science 566, 772 (2004).

12. D. Niu, R.W. Ashcraft, C. Hinkle, G.N. Parsons, “Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics”, J. of Vacuum Science and Technology A 22, 445 (2004).

11. G. V. Soares, K. P. Bastos, R. P. Pezzi, L. Miotti, C. Driemeier, I. J. R. Baumvol, C. Hinkle and G. Lucovsky, “Nitrogen bonding, stability, and transport in AlON films on Si”, Applied Physics Letters 84, 4992 (2004).

10. L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Hollander, J. Schubert, “Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon”, Applied Physics Letters 84, 4629 (2004).

9. C. L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, " A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices ", Microelectronic Engineering 72, 257 (2004).

8. G.B. Rayner, D. Kang, C.L. Hinkle, J.G. Hong, G. Lucovsky, “Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity”, Microelectronic Engineering 72, 304 (2004).

7. C. Hinkle and Gerry Lucovsky, “Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al₂O₃”, Applied Surface Science 216, 124 (2003).

6. K. P. Bastos, R. P. Pezzi, L. Miotti, G. V. Soares, C. Driemeier, J. Morais, I. J. R. Baumvol, C. Hinkle and G. Lucovsky, “Thermal stability of plasma-nitrided aluminum oxide films on Si.”  Applied Physics Letters 84, 97 (2004).

5. R. S. Johnson, C. Hinkle, J. G. Hong and G. Lucovsky, "Electron trapping in non-crystalline RPECVD Hf-Aluminates for gate dielectric applications.", J. of Vacuum Science and Technology B 20,1126 (2002).

4. R. S. Johnson, C. Hinkle, J. G. Hong, and G. Lucovsky, "Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices.", Solid State Electronics 46, 1799 (2002).

3. Christopher L. Hinkle and John M. Blondin, "Hydrodynamic instabilities in young supernova remnants", AIP Conf. Proc. 565, 81 (2001).

2. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle, and G. Lucovsky, "Investigation of postoxidation thermal treatments of Si/SiO₂ interface in relationship to the kinetics of amorphous Si suboxide decomposition", J.Vac.Sci.Technol. B 16, 2171 (1998).

1. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle and G. Lucovsky, "Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix.", J. of Non-Crystalline Solids 230, 507 (1998).

Book Chapters

1. M. Milojevic, C. L. Hinkle, E. M. Vogel, and R. M. Wallace, “Interfacial Chemistry of Oxides on III-V Compound Semiconductors", in Fundamentals of Compound Semiconductor MOSFETs, P. Ye and S. Oktyabrsky Editors, (2009) Springer.