Erik Jonsson School of Engineering & Computer Science Materials Science and Engineering UT Dallas
 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Publications

Peer Reviewed Journal Articles

73. S. McDonnell, C. L. Hinkle, and R. M. Wallace, "On Grazing Incidence X-Ray Diffraction for the Characterization of 2D Layered Materials," submitted to Applied Physics Letters Materials (2014).

72. R. V. Galatage, D. M. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states," accepted in Journal of Applied Physics  (2014).

71. H. Dong, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, C. L. Hinkle, J. Kim, Y. J. Chabal, and R. M. Wallace, "Silicon interfacial passivation layer chemistry for high-k/InP interfaces," ACS Applied Materials and Interfaces 6, 7340 (2014).

70. S. McDonnell, R. Addou, C. Buie, R. M. Wallace, and C. L. Hinkle, "Defect Dominated Doping and Contact Resistance in MoS2," ACS Nano 8, 2880 (2014).

69. S. Mohammed, M. T. Nimmo, A. V. Malko, and C. L. Hinkle, "Chemical bonding and defect states of LPCVD grown silicon-rich Si3N4 for quantum dot applications," Journal of Vacuum Science and Technology A  32, 021507 (2014).

68. R. C. Longo, S. K. C., K. Cho, K. Roodenko, Y. J. Chabal, A. K. Sra, D. E. Arreaga-Salas, and C. L. Hinkle, "Safer high-performance electrodes, solid electrolytes, and interface reactions for lithium-ion batteries," Material Matters 8, 4 (2013).

67. S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, J. Kim, C. L. Hinkle, M. J. Kim, and R. M. Wallace, "HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability," ACS Nano (2013).

66. H. Dong, S. K. C., X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R. M. Wallace, "In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP," Journal of Applied Physics 114, 154105 (2013).

65. H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, "In situ study of atomic layer deposition Al2O3 on GaP (100)," Applied Physics Letters 103, 121604 (2013).

64. B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, and R. M. Wallace, "Chemical and electrical characterization of the HfO2/InAlAs interface," Journal of Applied Physics 114, 104103 (2013).

63. C. D. Young, R. J. W. Hill, K. Matthews, W.-E. Wang, C. Hinkle, R. M. Wallace, W.-Y. Loh, C. Hobbs, P. D. Kirsch, and R. Jammy, "Effect of ALD Oxidant and Channel Doping on Positive Bias Stress Characteristics of Surface Channel In0.53Ga0.47As nMOSFETs," 2013 International Symposium on VLSI Technology, Systems, and Applications, 978 (2013).

62. W. Cabrera, H. Dong, B. Brennan, E. O'Connor, P. Carolan, R. Galatage, S. Monaghan, I. Povey, P. K. Hurley, C. L. Hinkle, Y. Chabal, R. M. Wallace, "Atomic layer deposition of HfO2 on III-V semiconductors- An interfacial chemistry perspective," Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo 2, 1 (2013).

61. H. Dong, W. Cabrera, R. V. Galatage, Santosh KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace, "Indium diffusion through high-k dielectrics in high-k/InP stacks," Applied Physics Letters 103, 061601 (2013).

60. X. Qin, B. Brennan, H. Dong, J. Kim, C. L. Hinkle, and R. M. Wallace, "In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N," Journal of Applied Physics 113, 244102 (2013).

59. C. L. Hinkle, R. V. Galatage, H. Dong, S. R. M. Anwar, B. Brennan, R. M. Wallace, and E. M. Vogel, "III-V/High-k Defects: DIGS vs. Border Traps," ECS Transactions 53, 161 (2013).

58. H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, and R. M. Wallace"In situ Study of HfO2 Atomic Layer Deposition on InP (100)," Applied Physics Letters 102, 171602 (2013).

57. J. Chan, M. Balakchiev, A. M. Thron, R. A. Chapman,  D. Riley, S. C. Song, A. Jain, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle, "PtSi Dominated Schottky Barrier Heights of Ni(Pt)Si Contacts Due to Pt Segregation," Applied Physics Letters 102, 123507 (2013).

56. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel"Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors," Applied Physics Letters 102, 132903 (2013).

55. A. M. Thron, T. J. Pennycook, J. Chan, W. Luo, A. Jain, D. Riley, J. Blatchford, J. B. Shaw, K. van Benthem, E. M. Vogel, C. L. Hinkle, K. van Benthem, "Formation of pre-silicide layers below Ni1-xPtxSi/Si interfaces," Acta Materialia 61, 2481 (2013).

54. B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, "In-situ studies of III-V surfaces and high-k atomic layer deposition," Solid State Phenomena 195, 90 (2013).

53. C. L. Hinkle, J. Chan, F. J. Mendez-Lopez, R. A. Chapman, E. M. Vogel, D. Riley, A. Jain, S. C. Song, K. Y. Lim, J. Blatchford, J. B. Shaw, "Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation," Conference Proceedings of the 12th International Workshop on Junction Technology (2012).

52. D. E. Arreaga-Salas, A. K. Sra, E. Roodenko, Y. J. Chabal, and C. L. Hinkle, "Progression of Solid Electrolyte Interphase Formation on Hydrogenated Amorphous Silicon Anodes for Lithium-Ion Batteries," Journal of Physical Chemistry C 116, 9072 (2012).

51. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, M. Christensen, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, "Gate-Last TiN/HfO2 Band Edge Effective Work Functions Using Low-Temperature Anneals and Selective Cladding to Control Interface Composition," Applied Physics Letters 100, 153501 (2012).

50. S. McDonnell, H. Dong, J. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, "Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems," Applied Physics Letters 100, 141606 (2012).

49. B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace, "In-situ Surface Pre-Treatment Study of GaAs and In0.53Ga0.47As," Applied Physics Letters 100, 151603 (2012).

48. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters 99, 172901 (2011).

47. C. L. Hinkle, E. M. Vogel, P. D. Ye, and R. M. Wallace, "Interfacial Chemistry of Oxides on InxGa1-xAs and Implications for MOSFET Applications," Current Opinion in Solid State & Materials Science 15, 188 (2011).

46. M. Milojevic, R. Contreras-Guerrero, E. O'Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace, "In-Situ XPS characterization of Ga2O passivation of In0.53Ga0.47As prior to ALD high-k dielectric deposition," Applied Physics Letters 99, 042904 (2011).

45. J. Chan, N. Y. Martinez, J. J. D. Fitzgerald, A. V. Walker, R. A. Chapman, D. Riley, A. Jain, C. L. Hinkle, and E. M. Vogel, "Extraction of Correct Schottky Barrier Height of Sulfur Implanted NiSi/n-Si Junctions: Junction Doping Rather than Barrier Height Lowering," Applied Physics Letters 99, 012114 (2011). 

44. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, and J. B. Shaw, “Band-Edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS,” ECS Transactions 35, 285 (2011).

43. C. L. Hinkle, B. Brennan, S. McDonnell, M. Milojevic, A. M. Sonnet, D. Zhernokletov, R. V. Glatage, E. M. Vogel, and R. M. Wallace, “High-k Oxide Growth on III-V Surfaces: Chemical Bonding and MOSFET Performance” ECS Transactions 35, 403 (2011).

42. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters 98, 193591 (2011). 

41. W. Wang, C. L. Hinkle, E. M. Vogel, K. Cho, and R. M. Wallace, "Is interfacial chemistry correlated to gap states for high-k/III-V interfaces," Microelectronic Engineering 88, 1061 (2011).

40. A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, and E. M. Vogel, "Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs," Microelectronic Engineering 88, 1083 (2011).

39. B. Brennan, M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, G. Hughes, and R. M. Wallace, "Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As," Appl. Surf. Sci. 257, 4082 (2011).

38. A. M. Sonnet, C. L. Hinkle, D. Heh, G. Bersuker, and E. M. Vogel,  “Impact of Semiconductor and Interface State Capacitance on Metal/High-k/GaAs Capacitance-Voltage Characteristics,” IEEE Transactions on Electron Devices 57, 2599 (2010).

37. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt”, 2010 Symposium on VLSI Technology, Digest of Technical Papers (2010).

36. C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks”, Applied Physics Letters 96, 103502 (2010).

35. E. Vogel, A. Sonnet, R. Galatage, M. Milojevic, C. Hinkle, and R. M. Wallace, “Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs,” ECS Transactions 28, 209 (2010).

34. A. M. Sonnet, R. V. Galatage, M. N. Jivani, M. Milojevic, P. Kirsch, J. Huang, R. A. Chapman, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Impact of surface preparations on the transport characteristics of InGaAs metal-oxide-semiconductor field effect transistors (MOSFETs),” Semiconductor Device Research Symposium (2010).

33. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding”, Applied Physics Letters 95, 151905 (2009).

32. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, “Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning”, Applied Physics Letters 94, 162101 (2009).

31. C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace, “Surface studies of III-V materials: Oxidation control and device implications”, ECS Transactions 19, 387 (2009).

30. C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, “Surface passivation and implications on high mobility channel performance”, Microelectronic Engineering 86, 1544 (2009).

29. C. L. Hinkle, A. M. Sonnet, R. A. Chapman, and E. M. Vogel, “Extraction of the Effective Mobility of In0.53Ga0.47As MOSFETs”, IEEE Electron Device Letters 30, 316 (2009).

28. M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces”, Applied Physics Letters 93, 252905 (2008).

27.  M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As(100) surfaces”, Applied Physics Letters 93, 202902 (2008).

26. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics”, Applied Physics Letters 93, 113506 (2008).

25. A. M. Sonnet, C. L. Hinkle, M. N. Jivani, R. A. Chapman, G. P. Pollack, R. M. Wallace, and E. M. Vogel, “Performance enhancement of n-channel inversion type InxGa1-xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer”, Applied Physics Letters 93, 122109 (2008).

24. F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, and R. M. Wallace, “S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates”, Applied Physics Letters 93, 061907 (2008).

23. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace.  GaAs interfacial self-cleaning by atomic layer deposition.”, Applied Physics Letters 92, 071901 (2008).

22. F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes.  Indium stability on InGaAs during atomic H surface cleaning.”, Applied Physics Letters 92, 171906 (2008).

21. Y. M. Strzhemechny , M. Bataiev , S. P. Tumakha, S. H. Goss , C. L. Hinkle, C. C. Fulton, G. Lucovsky , and L. J. Brillson.  “Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks.”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, 232 (2008).

20. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace.  Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation.” Applied Physics Letters 91, 163512 (2007).

19. E. M. Vogel, A. M. Sonnet, and C. L. Hinkle.  Characterization of electrically active interfacial defects in high-κ gate dielectrics., ECS Transactions 11, 393 (2007).

18. G. Lucovsky, J. Luning, N. A. Stoute, H. Seo, C. L. Hinkle, and B. Ju, "Band Edge Traps at Spectroscopically-Detected O-Atom Vacancies in Nanocrystalline ZrO2 and HfO2: An Engineering Solution for Elimination of O-Atom Vacancy Defects in Non-crystalline Ternary Silicate Alloys," ECS Transactions 1, 381 (2006).

17. G. Lucovsky, C.L. Hinkle, C.C. Fulton, N.A. Stoute, H. Seo, and J. Luning.  “Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2.”, Radiation Physics and Chemistry 75, 11 (2006).

16. C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, “Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers.", Applied Surface Science 234, 240 (2004).

15. G. Lucovsky, G.B. Rayner, D. Kang, C.L. Hinkle, and J.G. Hong, “A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys”, Applied Surface Science 234, 429 (2004).

14. C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, "Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers.", Surface Science 566, 1185 (2004).

13. G. Lucovsky, G.B. Rayner, D. Kang, C.L. Hinkle, J.G. Hong, “A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys”, Surface Science 566, 772 (2004).

12. D. Niu, R.W. Ashcraft, C. Hinkle, G.N. Parsons, “Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics”, J. of Vacuum Science and Technology A 22, 445 (2004).

11. G. V. Soares, K. P. Bastos, R. P. Pezzi, L. Miotti, C. Driemeier, I. J. R. Baumvol, C. Hinkle and G. Lucovsky, “Nitrogen bonding, stability, and transport in AlON films on Si”, Applied Physics Letters 84, 4992 (2004).

10. L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Hollander, J. Schubert, “Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon”, Applied Physics Letters 84, 4629 (2004).

9. C. L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky, " A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices ", Microelectronic Engineering 72, 257 (2004).

8. G.B. Rayner, D. Kang, C.L. Hinkle, J.G. Hong, G. Lucovsky, “Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity”, Microelectronic Engineering 72, 304 (2004).

7. C. Hinkle and Gerry Lucovsky, “Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3”, Applied Surface Science 216, 124 (2003).

6. K. P. Bastos, R. P. Pezzi, L. Miotti, G. V. Soares, C. Driemeier, J. Morais, I. J. R. Baumvol, C. Hinkle and G. Lucovsky, “Thermal stability of plasma-nitrided aluminum oxide films on Si.”  Applied Physics Letters 84, 97 (2004).

5. R. S. Johnson, C. Hinkle, J. G. Hong and G. Lucovsky, "Electron trapping in non-crystalline RPECVD Hf-Aluminates for gate dielectric applications.", J. of Vacuum Science and Technology B 20,1126 (2002).

4. R. S. Johnson, C. Hinkle, J. G. Hong, and G. Lucovsky, "Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices.", Solid State Electronics 46, 1799 (2002).

3. Christopher L. Hinkle and John M. Blondin, "Hydrodynamic instabilities in young supernova remnants", AIP Conf. Proc. 565, 81 (2001).

2. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle, and G. Lucovsky, "Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition", J.Vac.Sci.Technol. B 16, 2171 (1998).

1. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle and G. Lucovsky, "Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix.", J. of Non-Crystalline Solids 230, 507 (1998).

Book Chapters

1. M. Milojevic, C. L. Hinkle, E. M. Vogel, and R. M. Wallace, “Interfacial Chemistry of Oxides on III-V Compound Semiconductors", in Fundamentals of Compound Semiconductor MOSFETs, P. Ye and S. Oktyabrsky Editors, (2009) Springer.