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Home Research Publications Presentations
INVITED TALKS
4) “X-ray
Photoelectron Spectroscopy: Fundaments and Applications”, RUIM 2007,
3) “Growth
and characterization of Electronic Materials”, Seminar of the Department of
Physics at
2) “Electronic
Materials”, Seminar at Cinvestav., Querétaro, July 19, 2006.
1) “Las
olimpiadas de fisica y matematicas” Conference offered in the ITESM (Technological
Institute for Superior Studies from
INTERNATIONAL CONFERENCES
13) “Study
of surface preparation for high-k dielectrics on GaAs and InGaAs”, 38th
IEEE Semiconductor Interface Specialists Conference, Dec. 6-8, 2007,
12) “Study
of High-κ Dielectrics on InGaAs for CMOS Applications”. 54th
AVS International Symposium,
11) “Surface
Science of High-mobility Channels: Germanium”, Materials Structures and Devices
Annual Review,
10) “Instrument
characterization for quantitative ARXPS analysis”. 47th IUVSTA
Workshop on Angle-Resolved XPS,
9) “Nitrogen
Incorporation in Hf-based High-k Dielectrics Upon Thermal and Plasma Treatments”,
AVS 53rd International Symposium,
8)
“Study of Plasma and Thermally Nitrided ultra-thin Hf based high-k
dielectrics”, 3rd International Symposium on Advanced Gate Stack
Technology (ISAGST), SEMATECH, Austin, TX, Sep. 27-29, 2006.
7) “XPS
Study of Nitrided Hf-based high-k dielectrics". 2006
6) “XPS
Study of Se-passivated Si(100)”, 52nd AVS International Symposium,
5) “Displacive
Phase Transition in SrTiO3 Thin Films Grown on Si(001)”. AVS 50th
International Symposium,
4) “Formation
of the first monolayer of Sr on Si(001)”, 9th Topical Conference on
Quantitative Surface Analysis, a side conference of the 48th AVS
International Symposium, Morgan Hill, CA, Oct., 2001.
3) “Polarized
extended x-ray absorption fine structure measurement of strain in epitaxial
SrTiO3 on Si(001)”, 9th Topical Conference on Quantitative Surface Analysis.
2) “Prediction
of the Bonding Energy of Water to Methylcellulose from the Red-Shift of the
Water Bending Mode”, 11th International Conference on Thin Films.
1) “Study
on the interfaces for the hetero-structure ZnSe/CdTe/GaAs(100) grown by MBE”,
XIV Simposio Latinoamericano de Física
OTHER PRESENTATIONS
8) “Photoemission
Spectroscopy from SrO/Si(001) ultra thin films”, Oral contribution: XXIII
National Conference of the Mexican Vacuum and Surface Science Society.
Huatulco, Sep, 2003.
7) “EXAFS
Study on the local structure in epitaxial SrTiO3 thin films on
Si(001)”, Oral contribution: XXII National Conference of the Mexican Vacuum and
Surface Science Society.
6) “Strain
measurement of epitaxial SrTiO3 films on Si(001)”, XXI National
Conference of the Mexican Vacuum and Surface Science Society. Mazatlán, Oct,
2001.
5) “Photoemission
Study of the Sr/Si(001) Interface”, XX National Conference of the Mexican
Vacuum and Surface Science Society.
4) “Análisis
por espectroscopia Auger y por difracción de electrones de heteroestructuras
ZnSe/CdTe/GaAs(100)”, XVIII National Conference of the Mexican Vacuum and
Surface Science Society.
3) “Análisis
Auger de superficies GaAs(100) preparadas bajo diferentes tratamientos químicos
y térmicos para crecimiento epitaxial”, XVII National Conference of the Mexican
Vacuum and Surface Science Society. Mazatlán, Sep, 1997.
2) “Auger
spectroscopy of thin semiconducting films”, 5th Summer of the
Science (organized for the
1) “Erroneous
mathematical concepts in outstanding high school students”. XXVII National
Conference of the Mexican Mathematical Society. Querétaro, Oct, 1994.
PRESENTATIONS BY OTHERS
21) C.
L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. S.
Aguirre-Tostado, K. J. Choi, J. Kim, R. M. Wallace, “GaAs MOS Frequency
Dispersion Reduction by Surface Oxide Removal and Passivation”. 38th
IEEE Semiconductor Interface Specialists Conference,
20) F.S.
Aguirre-Tostado, M. Milojevic, S.J. McDonnell and R.M. Wallace, “XPS and LEISS
Study of GaAs Surface Preparation using Ammonium Hydroxide”. 54th
AVS International Symposium,
19) F.S.
Aguirre-Tostado, M. Milojevic, S.J. McDonnell, M.J. Kim, and R.M. Wallace,
“Physical and Chemical Properties of Hf-based High-κ Dielectrics on
Ge(001) for CMOS Applications”. 54th AVS International Symposium,
18) M.I.
Medina-Montes, M.V. Selvidge, F.S. Aguirre-Tostado, A. Herrera-Gomez, and R.M.
Wallace, “Diffusion of La-based Layers on HfO2/SiO2/Si
Dielectric Stacks,”. 54th AVS International Symposium,
17) C.
L. Hinkle, M. Milojevic, S. McDonnell, F. S. Aguirre-Tostado, A. M. Sonnet, R. M.
Wallace, and E. M. Vogel, “GaAs Surface Modification by Arsenic Oxide Removal
and Bond Conversion”. 4th International Symposium on Advanced Gate
Stack Technology (ISAGST),
16) B.
Coss, F. Aguirre-Tostado, R. M. Wallace, and J. Kim, “Role of Lanthanum In the
Gate Stack TaN/HfO2/SiO2/Si(001)”. 4th International Symposium on
Advanced Gate Stack Technology (ISAGST),
15) M.
Milojevic, S.J. McDonnell, F.S. Aguirre-Tostado and R.M. Wallace “XPS study of
GaAs surface preparation using ammonium hydroxide”, Materials Structures and
Devices Annual Review, Boston, May 9-10, 2007.
14) Alberto
Herrera-Gomez, Francisco S. Aguirre-Tostado and Robert M. Wallace, “Self
consistent data analysis in ARXPS: Getting quantitative in depth profile
analysis in ultra thin films”. 47th IUVSTA Workshop on Angle-Resolved
XPS,
13) A.
Herrera-Gomez, Y. Sun, F.S. Aguirre-Tostado, R. Contreras-Guerrero, R.M.
Wallace, Y. Hisao, and E. Flint, “Quantification of pinhole density in ultrathin
diamond-like-carbon films”. 47th IUVSTA Workshop on Angle-Resolved
XPS,
12) Robert
M. Wallace, F. Servando Aguirre-Tostado, Alberto Herrera-Gomez, Moon J.Kim,
Jiyoung Kim, and Bruce E. Gnade, “High-k Gate Stack Stability at the
Nanoscale”. Nano and Giga Challenges in Electronics and Photonics: From Atoms
to Materials to Devices to System Architecture Symposium and
11) F.S.
Aguirre-Tostado, M.J. Kim, R.M. Wallace, Sreenivasan, K.-I. Seo, C.O. Chui,
K.C. Saraswat, P.C. Mcintyre, F.A. Stevie, R. Garcia, Z. Zhu, and D.P. Griffis,
“Thermal Stability of High-k Dielectrics on Ge(001)”. AVS 53rd International Symposium,
10)
A. Herrera-Gomez, F.S. Aguirre-Tostado, G. Pant, M.A. Quevedo-Lopez, P.D.
Kirsch, B.E. Gnade, and R.M. Wallace, “Dependence of the Nitrogen Depth Profile
on Annealing in HfSiON/SiON/Si(001) Ultrathin Films”. AVS 53rd
International Symposium,
9)
A. Herrera-Gomez, F.S. Aguirre-Tostado, G.K. Pant, M. A. Quevedo-Lopez, Paul D.
Kirsch, B.E. Gnade and R.M. Wallace, “Diffusion of Nitrogen in
HfSiON/SiON/Si(001) Ultrathin Films”, 3rd International Symposium on Advanced
Gate Stack Technology (ISAGST), SEMATECH, Austin, TX, September 27-29, 2006.
8) M.A.
Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H.N. Alshareef, J. Barnett, H.R.
Harris, A. Neugroschel, F.S. Aguirre-Tostado, B.E. Gnade, M.J. Kim, R.M. Wallace,
and B.H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with
HfSiON EOT Scaling ,” 36th European Solid-State Device research
Conference,
7) Herrera-Gómez,
A., Aguirre-Tostado, F.S., Mathews, C.S. “Self consistent data analysis in
ARXPS: Gettingquantitative in depth profile analysis in ultra thin films”.
Surface Analysis ’06 Topical Conference of the Applied Surface Science Division
of the AVS,
6) P.
Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace,
“Thermal Stability of Amorphous LaAlO3 Thin Films on Si(100) Deposited
by Plasma Sputtering and Molecular Beam Deposition,” SRC Techcon 2005,
Portland, OR, Oct. 25, 2005.
5) P.
Sivasubramani, P. Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, and
R.M. Wallace, “The Effect of Nitrogen Incorporation on the Thermal Stability of
La, Hf-aluminate Gate Stacks on Silicon”, AVS 52nd International
Symposium, Boston MA, Nov. 2005.
4) J.C.
Woicik, F.S. Aguirre-Tostado, A. Herrera-Gomez, R. Droopad, and Z. Yu,
“Tetragonal plus displacive ferroelectric distortion in thin SrTiO3
films grown on Si(001)”, 204th Meeting of The Electrochemical Society.
3) G.
Velázquez de la Cruz, F.S. Aguirre-Tostado, et. al., “Bonding of Water to
Methylcellulose”, 11th International Conference on Thin Films.
2) E.
López-Luna, F.S. Aguirre-Tostado , et. al., “Auger analysis of GaAs(001)
surfaces prepared under different thermal and chemical treatments as substrates
for the growth by MBE” XIV Simposio Latinoamericano de Física
1) I.
Hernández-Calderón, F.S. Aguirre-Tostado, C. Vargas-Hernández, E. López-Luna
and O. de Melo, “Interfacial reactivity of ZnSe/CdTe layers by molecular beam
epitaxy”, II Workshop on Optoelectronic Materials and Their Applications
(Including Solar Cells), La Habana, Cuba,Nov. 2-6, 1998.