The Plasma-Therm III-V etcher is configured for etching III-V compound semiconductors using chlorine and fluorine based chemistries.
BCl3, HBr, CHF3, SF6, CH4, O2, N2, H2, He, and Ar are installed on the tool. The tool is
capable of sample heating up to 180C and is equipped with an
end-point detection and thickness monitoring system.
December, 2011, Gordon Pollack, University of Texas at Dallas