EE3310 Electronic Devices
Fall 2009

General Information

• Course number: EE3310
• Days & Times: MW 8:30 - 9:45 AM
• Place: ECSN 2.110
• Required textbook: Solid State Electronic Devices; Sixth Ed., by B. Streetman, S. Banerjee (Prentice Hall, 2006.)
• Course homepage: EE3310 Homepage
• Instructor: Dr. J-B. Lee, RL 3.406 (Office hours at ECSN 3.318), 972-883-2893, jblee@utdallas.edu
• Office hours: MW 10 - 11 am, or by appointment
• Section 001, TA: Siwat Saibua, TA office number: ECSN 3.516, Email to Siwat Saibua
• TA office hours: MW 4:30 - 5:30 pm or by appointment

Overview

• EE3310 course syllabus (Updated on October 21, 2009)

Announcements

• Scores to date. (Last updated on 11/17/09)

Written Reports on Selected Articles

• Report Instructions
• Best report example
• Article 1: The LED's Dark Sectret (due: 10/7/09, noon)
• Article 2: The High-k solution(due: 11/25/09, noon)

Homeworks and Exams

• Exam #1 Solution
• Exam #2 Solution
• Homework #1 (due: 9/9/09)
• Homework #1 Solution (updated on 9/16/09)
• Homework #2 (due: 9/23/09)
• Homework #2 Solution
• Homework #3 (due: 10/12/09)
• Homework #3 Solution
• Homework #4 (due: 10/21/09)
• Homework #4 Solution
• Homework #5 (due: 11/9/09)
• Homework #5 Solution
• Homework #6 (due: 11/30/09)
• Homework #5 Solution (to be posted)

Slide Presentations and Internet Resources

• Chapter 9
• History of Microelectronics
• The First Integrated Circuit
• Integrated Circuits Manufacturing Sequence
• Chapter 1
• Crystal Lattices
• Web Elements Periodic Table
• Properties of semiconductor materials with unit cells applet
• Chapter 3
• Semiconductors on NSM
• Bonding forces and energy bands
• Extra Material: Energy band formation
• Extra Material: Photonic crystal - artificial periodic structure
• Charge carriers and carrier concentrations
• Fermi level applet
• Carrier concentration vs. Fermi level applet
• Drift of charge carriers
• Chapter 4
• Excess charge carriers
• Excess charge carrier spatial distribution derivation
• Indirect recombination applet
• Haynes Shockley experiment applet
• Chapter 5.
• Diodes
• p-n Junction Applet: Energy Band
• p-n Junction Applet: Space Charge Profile and Electric Field
• p-n Junction Applet: Equilibrium
• p-i-n Junction Applet: Equilibrium
• p-i-n Junction Applet: Space Charge Profile and Electric Field
• p-n Junction Applet: p-n junction diode under bias I
• p-n Junction Applet: p-n junction diode under bias II
• p-n Junction Diode Applet: I-V and C-V characteristics
• Chapter 6
• JFETs and MOSFETs
• JEFET Applet
• MOSFET Applet
• MOS Energy Band at Equilibrium Applet
• MOS Charge and Field Potential at Equilibrium Applet
• MOS Energy Band with Bias Applet
• MOS Charge and Field Potential with Bias Applet
• Chapter 7.
• BJT
• BJT Minority Carrier Profile Applet
• BJT Carrier Motion Applet
• BJT Switching Applet

Useful Links

• Course related links
  • Semicondcutor Applet Services
• Other links
  • UTD EE3110 - Electronic Devices Laboratory Class Homepage
  • The Semiconductor Subway
  • Semi Web
  • SEMATECH
  • Semiconductor Online
  • Semiconductor Net