PRESENTATIONS

 

Invited Talk and Colloquia

1.    J. Kim, “In-situ XPS half cycle study of ALD,” 2nd International Conference on Microelectronics and Plasma,” (Sep. 17- Sep. 25) Sep. 23. 2009, Pusan, Korea

2.    J. Kim, H.C. Kim, B. Lee, A. Hande, E.M. Vogel, M.J. Kim, and R.M. Wallace, “ALD of High-k Gate Dielectrics on Si and Alternative Substrates, AVS 55th International Symposium, October 21, 2008, Boston, MA, USA

3.    Jiyoung Kim, D. K. Cha, O. Lourie, M. J. Kim, “Characterizatio of nanodevices by using in-situ TEM-STM (Invited talk), 2008 M&M Meeting, Jun. 29 – Jul.3, 2008, Albuquerque, NM

4.    Jiyoung Kim, Dongkyu Cha, Moon J. Kim, “Single nanotube and nanowire device fabrication using focused ion beam system,” The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007

5.    C. Bae, H. Shin and J. Kim, “Fabrication of Nanoscale Tubular Structures and Capsules of Oxides by ALD,” 212th Meeting of the Electrochemical Society, Washington DC, Oct. 7 – 12 (2007)

6.    Jiyoung Kim, “ALD for Deposition Equipment for Nano-Regime,” Materials Science and Engineering Colloquia, Korea University, Seoul/Korea, Jul. 6. 2007.

7.    Jiyoung Kim, “Resistance RAM (ReRAM),” Texas Instruments, Dallas/TX, Mar. 2. 2007

8.    Jiyoung Kim, “HfO2/SiO2 Wedding Cake,” SEMATECH, Austin/TX, May. 25. 2006

9.    Jiyoung Kim, “Atomic Layer Chemical Vapor Deposition for Microelectronics and Nanotechnology Applications,” Materials Science and Engineering Colloquia, University of Texas at Arlington, Arlington/TX, Nov. 11, 2005.

10. Jiyoung Kim, “Atomic Layer Chemical Vapor Deposition (ALCVD) for Microelectronics and Nanotechnology Applications,” Materials Science and Engineering Colloquia, University of North Texas, Denton/TX, Sep. 17, 2003

11. Jiyoung Kim, “Alternative Gate Dielectrics for the Next Generation CMOS applications,” Advanced Materials Engineering Colloquia, HongIk University, Seoul/Korea, Sep. 17. 2002

12.  Jiyoung Kim, JuneMo Koo, “Novel dual oxidation barrier layers for high density ferroelectric memory applications,” 3rd Workshop on high-k dielectric / ferroelectric materials and devices, Seoul National University, Seoul/Korea, Dec. 17, 2001 (Invited)

13. Jiyoung Kim, “Fabrication and Applications of Ferroelectric Thin Films,” 5th Lecture Series on Nano Materials and Technology, Chosun University, Kwangju/Korea, Mar. 21. 2001

14. Jiyoung Kim, “Ferroelectric Memory Devices,” Materials Science and Engineering Colloquia, GIST, KwangJu/Korea, Feb. 23. 2000

15. Jiyoung Kim, “PLZT Thin Film Capacitors for Gb Generation DRAM Applications,” 1996 Spring Symposium of the Korean Materials Research Society, TaeGu/Korea, May. 17. 1996 (Invited)

 

International Conference Presentation

1.      T. J. Park, H. Kim, M. Milojevic, B. Lee, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. H. Yi, H. Li, D. Shenai, J. Suydam, “In-situ half-cycle XPS investigation of La-aluminate formation during atomic layer deposition, 56th American Vacuum Society, Nov. 8-13, San Jose, CA (2009)

2.      B. Lee, G. Mordi, M. Kim, K. Cho, Y. Chabal, E. M. Vogel, R. M. Wallace, “Graphene Field-Effect Transistors with Atomic Layer Deposited High-k Dielectrics,” 6th International Symposium on Advanced Gate Stack Technology (ISAGST), W Hotel, San Francisco, CA, Aug. 23-26 (2009)

3.      Hyun-Chul Kim, Tae Joo Park, Bongki Lee, M. Milojevic, R. M. Wallace, Jiyoung Kim, “Half-cycle atomic layer deposition study of lanthanum oxide film using in-situ monochromatic x-ray photoelectron spectroscopy,” 6th International Symposium on Advanced Gate Stack Technology (ISAGST), W Hotel, San Francisco, CA, Aug. 23-26 (2009)

4.      D. Cha, S. Y. Park, S. J. Ahn, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I. Jung, M. J. Kim, J. Kim, “In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM,” Microscopy and Microanalysis 2009, Richmond, VA, USA, July 26-30 (2009)

5.      D. Cha, M. Lee, H. Shin, M. J. Kim, J. Kim, “Functionalization of Single TiO2 Nanotube for Bio-Sensor Applications,” Microscopy and Microanalysis 2009, Richmond, VA, USA, July 26-30 (2009)

6.      B. Lee, G. Mordi, Y.J. Chabal, K. J. Cho, M. J. Kim, E. M. Vogel, R. M. Wallace, L. Colombo, J. Kim, “High-k dielectric deposition using ALD for graphene-based nanoelectronics,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

7.      H. Kim, M. Milojevic, B. Lee, T. J. Park, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi, H. Li, D. Shenai, J. Suydam, “In-situ half cycle XPS investigation of La-silicate formation during atomic layer deposition using La(iPrfAMD)3 and ozone on Si substrate,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

8.      M. Lee, D. Cha, H. Shin, M. J. Kim, J. Kim, “Atomic layer deposited TiO2 nanotube devices for bio-sensor applications,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

9.      C. Bae, H. Kim, H. Yoo, J. Kim, H. Shin, “Atomic layer deposition of nanotubular and inverse opaline structure of anatase TiO2,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

10.  H. Kim, T. J. Park, K. J. Chung, R. M. Wallace, J. Kim, “Effects of ozone on characteristics of HfO2 films deposited by atomic layer deposition,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

11.  C. Bae, H. Kim, H. Yoo, J. Kim, H. Shin, “One-step patterning of inorganic thin films using atomic layer deposition,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

12.  T. W. Kim, B. Lee, B. MacFarlane, J. Kim, “Conformal ALD coating for photonic integrated circuit applications,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

13.  T. J. Park, K. J. Chung, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, J. Ahn, X. Liu, J. Yi, H. Li, M. Rousseau, D. Shenai, J. Suydam, “Alternative oxidant effects on chemical structure and electrical properties of atomic-layer-deposited La2O3 films on Si using (fAMD) La and ozone,” Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

14.  T. J. Park, K. J. Chung, J. Ahn, H. C. Kim, R. M. Wallace, J. Kim, X. Liu, H. J. Yi, M. Rousseau, D. Shenai, “Precursor dependent rutile phaswe formation of atomic-layer-deposited TiO2 film on Ru electrode for DRAM capacitor applications,” AVS 9th International conference on atomic layer deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)

15.  J. Kim, D. K. Cha, S. Y. Park, M. J. Kim, “In-situ Electrical Characterization in Electronic Microscopy,” 2009 US-Korea Conference, Raleigh, NC, July 16-19 (2009)

16.  B. Lee, T. J. Park, A. Hande,  K. J. Chung, M. J. Kim, R. M. Wallace, J. Kim, “Chemical and electrical properties of ALD La2O3 films grown with La-FMD and alternative oxidants,” INFOS 2009, Clare College, Cambridge, UK, Jun. 29- Jul. 1 (2009)

17.  D. Cha, S. J. Park, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I. Jung, M. J. Kim, J. Kim, “A Direct observation on the structural evolution of memory-switching phenomena using in-situ TEM,” 2009 Symp. VLSI Technology, Kyoto, Japan, Jun. 15-18 (2009)

18.  B. Coss, W. Y. Loh, J. Oh, G. Smith, C. Smith, H. Adhikari, B. Sassman, S. Parthasrathy, J. Barnett, P. Majhi, R. M. Wallace, J. Kim, R. Jammy, “CMOS Band-Edge Schottky Barrier Heights Using Dielectric-Dipole Mitigated (DDM) Metal/Si for Source/Drain Contact Resistance Reduction,” 2009 Symp. VLSI Technology, Kyoto, Japan, Jun. 15-18 (2009)

19.  B. Lee, G. Mordi, T. Park, L. Goux, Y. J. Chabal, K. Cho, E. M. Vogel, M. J. Kim, L. Colombo, R. M. Wallace, J. Kim, “Atomic-Layer-Deposited Al2O3 as Gate Dielectrics for Graphene-Based Devices,”  215th ECS Meeting, San Francisco, CA, May 24-29 (2009)

20.  G. Lee, C. Gong, A. R. Pirkle, A. Venugopal, B. Lee, S.Y. Park, L. Goux, M. Acik, R. Guzman, Y. J. Chabal, J. Kim, E. M. Vogel, R. M. Wallace, M. J. Kim, L. Colombo, K. Cho, “Materials Science of Graphene for Novel Device Applications,” 215th ECS Meeting, San Francisco, CA, May 24-29 (2009)

21.  C. Hinkle, M. Milojevic, A. Sonnet, H. Kim, J. Kim, E. M. Vogel, R. M. Wallace, “Surface Studies of III-V Materials: Oxidation Control and Device Implications,” 215th ECS Meeting, San Francisco, CA, May 24-29 (2009)

22.  H. Kim, B. Lee, M. Milojevice, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. H. Y, D. Shenai, J. Suydam, “In-situ XPS study of La-based oxide film deposited by ALD using tris(N,N’-diisopropylformanidinato) La precursor,” 2009 MRS Spring Meeting, San Francisco, CA, Apr. 13-17 (2009)

23.  Hyun-Chul Kim, Tae Joo Park, Keum Jee Chung, Robert. M. Wallace, Jinho Ahn, Jiyoung Kim, Effects of ozone based atomic layer deposition (ALD) for high-k dielectric applications,” 2009 MRS Spring Meeting, San Francisco, CA, Apr. 13-17 (2009)

24.  M. Milojevic, R. Contreras-Guerrero,* H. C. Kim, M. Lopez-Lopez* J. Kim, R.M. Wallace, “Control of interfacial oxide formation for dielectrics in direct contact with III-V channels,” 2009 MRS Spring Meeting, San Francisco, CA, Apr. 13-17 (2009)

25.  Mingun Lee, Dongkyu Cha, Hyunjung Shin, M.J. Kim, Jiyoung Kim, “Fabrication and characterization of single TiO2 nanotube for chemical and bio sensor applications,” 2009 TMS Meeting, San Francisco, CA, Feb. 15-19 (2009)

26.  Tae Wook (Sam) Kim, Jiyoung Kim, Duncan McFarlane, “Nano-Scale Trench Filling Using Atomic Layer Deposition (ALD),” 2009 TMS Meeting, San Francisco, CA, Feb. 15-19 (2009)

27.  C.L. Hinkle, A.M. Sonnet, M. Milojevic, F.S. Aguirre-Tostado, J. Kim, R.M. Wallace, B. Brennan, G.J. Hughes, E.M. Vogel, “Surface states, interface traps, and Fermi level pinning correlation to the interface oxidation states of Ga,” 39th IEEE Semiconductor Interface Specialists Conference (SISC 2008) December 11-13, 2008, Catamaran Resort Hotel, San Diego, CA, USA

28.  A.M. Sonnet, C.L. Hinkle, M.N. Jivani, J. Kim, R.A. Chapman, R.M. Wallace, E.M. Vogel, “Performance Enhancement of n-Channel Inversion Type InxGa1-xAs MOSFET by Effective Surface Passivation Using Ex-Situ Deposited Thin Amorphous Si Layer,” 39th IEEE Semiconductor Interface Specialists Conference (SISC 2008), December 11-13, 2008, Catamaran Resort Hotel, San Diego, CA, USA

29.  M. Milojevic, B. Brennan, F.S. Aguirre-Tostado, C.L. Hinkle, H.C. Kim, B. Lee, G.J. Hughes, E.M. Vogel, J. Kim, R.M. Wallace, “In-situ XPS investigation of the “clean-up” effect through half-cycle ALD reactions on III-V substrates,” 39th IEEE Semiconductor Interface Specialists Conference (SISC 2008) December 11-13, 2008, Catamaran Resort Hotel, San Diego, CA, USA

30.  B. Lee, S.Y. Park, H.Y. Kim, K.J. Cho, E.M. Vogel, M.J. Kim, R.M. Wallace, and J. Kim, “Conformal Dielectric Layers Deposited by ALD (Atomic Layer Deposition) for Graphene-based Nanoelectronics,” AVS 55th International Symposium, October 21, 2008, Boston, MA, USA.

31.  J. Kim, H.C. Kim, B. Lee, A. Hande, E.M. Vogel, M.J. Kim, and R.M. Wallace, “ALD of High-k Gate Dielectrics on Si and Alternative Substrates, (Invited talk), AVS 55th International Symposium, October 21, 2008, Boston, MA, USA

32.  E.M. Vogel, C.L. Hinkle, A. Sonnet, F.S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, J.G. Wang, H.C. Floresca, J. Kim, M.J. Kim, R.M. Wallace, “Electrical and Physical Properties of High-k Gate Dielectrics on III-V Semiconductors,” AVS 55th International Symposium, October 22, 2008, Boston, MA, USA

33.  A. Hande, B. Lee, H.C. Kim, R.M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi, D.V. Shenai, J. Suydam, “Atomic Layer Deposition of Lanthanum Based Oxides for High-K Gate Dielectrics,” AVS 55th International Symposium, October 23, 2008, Boston, MA, USA

34.  M. Milojevic, B. Brennan,  H.C. Kim, F.S. Aguirre-Tostado, J. Kim, R.M. Wallace, G. Hughes, “In-situ Studies of Al- and La-oxide on In0.53Ga0.47As,” AVS 55th International Symposium, October 23, 2008, Boston, MA, USA

35.  M. Milojevic, C.L.Hinkle, F.S. Aguirre-TostadoB. Lee,  S.J.McDonnell, K.J.Choi,   H.C. Kim, A.M.Sonnet, G. J.Hughes, E.M.Vogel, J. Kim, R.M. Wallace, “In-situ ALD Studies of high-k dielectric/high mobility interfaces,” E-MRS  Spring Meeting, May 27, 2008, Strausbourg, FRANCE

36.  B.K. Lee, A. Hande, K. J Choi, H. C Kim, J. Kim, M. Milojevik, F. S Aguirre-Tostado, R. M Wallace, M. Rousseau, D. Shenai, H.i Li and J. Suydam, “Atomic Layer Deposition of Lanthanum Aluminate and Lanthanum Oxide Thin Films for High-K Gate Dielectrics”, MRS Spring Meeting, March 24-28, 2008, San Francisco, CA, USA

37.  C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics,” 15th Workshop on Dielectrics in Microelectronics, WoDiM 2008, 23rd - 25th June 2008, Bad Saarow (Berlin)

38.  M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, B. Lee, S. J. McDonnell, K. J. Choi, H. C. Kim, A. M. Sonnet, G. J. Hughes, E. M. Vogel, J. Kim and R. M. Wallace, “High-κ dielectrics for CMOS beyond 22nm ,” 15th Workshop on Dielectrics in Microelectronics, WoDiM 2008, 23rd - 25th June 2008, Bad Saarow (Berlin)

39.  J. Kim, B. Brennan, F. S. Aguirre-Tostado, C. Hinkel, H. C. Kim, B. Lee, G. Hughes, E. Vogel and R. M. Wallace, “In-situ XPS study of ALD Al2O3 deposition on InxGa1-xAs,” 5th International Symposium on Advanced Gate Stack Technology (ISAGST), September 28- October 1, 2008, Lakeway Resort & Spa – Austin, TX, USA

40.  BK Lee, S-Y Park, H-C Kim, K. Cho, E. Vogel, M. Kim, R. Wallace, and J. Kim, “Al2O3 Gate Dielectric Layer Deposited by ALD (Atomic Layer Deposition) For Graphene-based Nanoelectronics,” 5th International Symposium on Advanced Gate Stack Technology (ISAGST), September 28- October 1, 2008, Lakeway Resort & Spa – Austin, TX, USA

41.  A. Hande, B. Lee, HC Kim, R. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi, D. Shenai and J. Suydam, “Atomic Layer Deposition of Lanthanum based Nano-Laminates for High-K Gate Dielectrics,” 5th International Symposium on Advanced Gate Stack Technology (ISAGST)September 28- October 1, 2008, Lakeway Resort & Spa – Austin, TX, USA

42.  E. Vogel, A. Sonnet, C. L. Hinkle, F. S. Aguirre-Tostado, M. Milojevic, J. Kim, and R.M. Wallace, “Electrical and Physical Properties of GaAs MOS Devices with Al2O3/a-Si Gate Dielectric Stacks,” 5th International Symposium on Advanced Gate Stack Technology (ISAGST), September 28- October 1, 2008, Lakeway Resort & Spa – Austin, TX, USA

43.  M. Milojevic, H. C. Kim, F. S. Aguirre-Tostado, B. Lee, C. Hinkle, E. Vogel, R. M. Wallace, Jiyoung Kim, “Evaluation of oxygen gathering effect on high-k/GaAs interface using half cycle atomic layer deposition and in-situ XPS study,” 2008 ALD Conference, Jun. 29 – Jul.3, 2008, Bruges, Belgium

44.  A. Hande, B. Lee, H. C. Kim, R. M. Wallace, J. Kim, M. Rousseau, J. H. Yi, X. Liu, D. Shenai, H. Li, and J. Suydam, “atomic layer deposition of nanolaminate structures for lanthanum Based oxide thin films, 2008 ALD Conference, Jun. 29 – Jul.3, 2008, Bruges, Belgium

45.  B. Lee, A. Hande, H. C. Kim, R. M. Wallace, J. Kim, M. Rousseau, J. H. Yi, X. Liu, D. Shenai, H. Li, and J. Suydam, “ATOMIC LAYER DEPOSITION OF LANTHANUM OXIDE THIN FILMS USING WATER (H2O) AND OZONE (O3) CHEMISTRY, “2008 ALD Conference, Jun. 29 – Jul.3, 2008, Bruges, Belgium

46.  Jiyoung Kim, D. K. Cha, O. Lourie, M. J. Kim, “Characterization of nanodevices by using in-situ TEM-STM (Invited talk), 2008 M&M Meeting, Jun. 29 – Jul.3, 2008, Albuquerque, NM

47.  D. C. Cha, K. M. Lee, B. K. Lee, J. Wang, M. J. Kim, H. Shin, J. Lee, J. Kim,”Fabrication and characterization of single stand-alone TiO2 nanotube device, 2008 TMS Meeting March 9 – March 13, 2008, New Orleanse, LO, USA

48.  M.G. Lee, D. C. Cha, M. J. Kim, J. Kim, “Stand-alone TiO2 nanotube technology for sensor applications,” 2008 US-Korea Conference Meeting, August 13 – August 16, 2008, San Diego, CA, USA

49.  D. C. Cha, S. J. Ahn, S. Y. Park, M. J. Kim, H. Horii, S. O. Park, U. I, Jung and J. Kim, “In-situ characterization of phase change memory devices by using TEM-STM,” 2008 Non-Volatile Memory Technology SymposiumNovember 11 – November 14, 2008, Monterey, CA, USA

50.  D. Cha, K. Lee, B. Lee, J. Wang, M. Kim, H. Shin, J. Lee, J. Kim, “Fabrication and characterization of single stand-alone TiO2 nanotube devices,” 2008 TMS Annual Meeting and Exhibition, New Orleans/LS, Mar. 9-13 (2008) 

51.  C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, “GaAs MOS frequency dispersion reduction by surface oxide removal and passivation,” IEEE-SISC (2007)

52.  F. Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R. Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J. Woodall, P. Ye, “XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs,” IEEE-SISC (2007) 

53.  B. Coss, F. Aguirre-Tostado, R. Wallace and J. Kim, “Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations,” 2007 Fall MRS, Boston, Nov. (2007) 

54.  J. Kim, N. Michael, C. Kim, Y. Park, R. Augur, J. Kim, “Study of interface electromigration mechanism in Cu/barrier interconnects,” The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007 

55.  K. J. Choi, S. J. McDonnell, R. M. Wallace, J. Kim, “Step by step in-situ X-ray photoelectron spectroscopy investigate ion ALD Al2O3 films using TMA and water,” AVS meeting, Seattle/WA, Oct. (2007) Accepted

56.  Jiyoung Kim, Dongkyu Cha, K.J. Choi, Moon J. Kim,“In-situ TEM observation on nanostructure evolution during electrical stressing,” 8th IEEE Nonvolatile Memory Technology Symposium, Albuquerque, New Mexico, Nov. 10-13 (2007)  

57.  Amar Chowdhury, S. Courtney, R. M. Wallace, Jiyoung Kim, “Hydrogen diffusion through barrier layers,” 8th IEEE Nonvolatile Memory Technology Symposium, Albuquerque, New Mexico, Nov. 10-13 (2007)  

58.  B. Lee, K. Choi, A. Hande, R. Wallace, Y. Senzaki, M. Rousseau, J. Suydam, J. Kim, “Characteristics of the ALD ZrO2 gate capacitors,” 4th IEEE-IAGST, Sep. 25-28, Dallas/TX (2007)

59.  B. Coss, F. Aguirre-Tostado, R. M. Wallace, J. Kim, “Evaluation of TaN based NMOS metal gate solution as a function of La contents,” 4th IEEE-IAGST, Sep. 25-28, Dallas/TX (2007)

60.  Y. Tan, C. Young, D. Heh, C. Park, P. Sivasubramani, J. Huang, D. Gilmer, K. Choi, J. Kim, M. Kim, P. Majhi, R. Choi, P. Kirsch, B. Lee, H. Tseng, R. Jammy, “Improved flash memory program and erase window with TiO2 charge trap layer and high temperature dopant anneal,” 4th IEEE-IAGST, Sep.25-28, Dallas/TX, (2007)

61.  Jiyoung Kim, Dongkyu Cha, Moon J. Kim, “TiO2 nanotube test device fabrication using focused ion beam,” US-Korea Conference 2007, Washington D.C., Aug. 9-11 (2007)

62.  Jiyoung Kim, Moon J. Kim, “Nano-X: Nanofabrication, Nano-manipulation and Nano-characterization,” Korea-Texas Nano Workshop, Richardson/TX, Aug 6 – Aug. 8 (2007)

63.  H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H. H. Tseng, B.H. Lee, R. Jammy, “Determination of strain in the Silicon channel induced by a metal electrode,” Microscopy and Microanalysis 2007 Meeting, Fort Lauderdale, Florida, Aug. 5-9 (2007)

64.  T. H. Lee, D. K. Cha, J. G. Wang, J. Jeon, J. Kim, R. M. Wallace, B. E. Gnade, M. J. Kim, “HRTEM study on the interface of Si based Resonant Tunneling Diodes (RTD) by UHV wafer bonding technology,” Microscopy and Microanalysis 2007 Meeting, Fort Lauderdale, Florida, Aug. 5-9 (2007)

65.  D.K. Cha, J. Jeon, J. Kim, M.J. Kim, “Fabrication and characterization of single nanowire and nanotube devices using focused ion beam fabrication,” Microscopy and Microanalysis 2007 Meeting, Fort Lauderdale, Florida, Aug. 5-9 (2007)

66.  J. Kim, B. Lee, K. Choi, R.M. Wallace, L. Tao, W. Hu, “Selective deposition combining ALD (& MOCVD) with surface modification, 2007 ALD conference, San Diego/CA, USA, Jun. 25-27 (2007)

67.  Dongkyu Cha, K. Lee, B. Lee, Jinguo Wang, M. Kim, Hyungjung Shin, Jaegab Lee, Jiyoung Kim, “Fabrication of single TiO2 nanotube devices using by novel FIB technique,” International Conference on Nanoscience and Technology China 2007 (China NANO 2007), Beijing/China Jun. 4-6, (2007)

68.  P Sivasubramani, T. Boscke, J. Huang, C. Young, P. Kirsch, S. Krishnan, M. Quevedo-Lopez, S. Govindarajan, B. Ju, H. Harris, D. Lichtenwalner, J. Jur, A. Kingon, J. Kim, B. Gnade, R. Wallace, G. Bersukar, B. Lee, R. Jammy, “Dipole moment model explaning nFET Vt tuning utilizing La, Sc, Er and Sr doped HfSiON dielectrics,” 2007 Symp. VLSI Technology, Kyoto, Japan, Jun. 12-14 (2007)

69.  Bongki Lee, Kyu-Jeong Choi, Kyung Min Lee, Moon J. Kim, Jiyoung Kim, “Resistive switching behavior of SrTiO3 single crystal nonvolatile memory applications,” 2007 International Symposium on Integrated Ferroelectrics (ISIF), Bordeaux/France, May 8-12 (2007)  

70.  Kyu-Jeong Choi, Bongki Lee, KyungMin Lee, Moon. J. Kim, Jiyoung Kim, “Characterization of copper doped silicon oxide films for programmable metallization cell memory applications,” 2007 International Symposium on Integrated Ferroelectrics (ISIF), Bordeaux/France, May 8-12 (2007)

71.  Robert M. Wallace, C. Amar, J. Kim, Hydrogen diffusion through barrier layers

72.  W. Hu, L. Tao, B. Lee, J. Kim, S. Pang, "Induced patterning of organic and inorganic materials by spatially discrete surface energy,” The fify-first international conference on electron, ion and photon beam technology and nanotechnology (EIPBN), Denver/Colorado, May. 29 – Jun. 1 (2007)

73.  Dongkyu Cha, Jiyoung Kim, Bongki Lee, M.J. Kim, Sanghee Won, HyunJung Shin, Jaegab Lee, MyungMo Sung, “Fabrication and characterization of single TiO2 nanotube nanosensor,” 2006 MRS Fall Meeting, Boston, USA, Nov. 26- Dec. 1 (2006)

74.  Dongkyu Cha, Bongki Lee, R.M Wallace, B.E Gnade, Jiyoung Kim, M.J. Kim, “In-situ manipulation and characterization of single nanowire and nanotube by using focused ion beam equipped with nanomanipulator,” 2006 MRS Fall Meeting, Boston, USA, Nov. 26- Dec. 1 (2006)

75.  Dongkyu Cha, Bongki Lee, M.J. Kim, Jiyoung Kim, “Stand-alone TiO2 nanotubes for nano-sensors using atomic layer deposition and focused ion beam,” 2006 American Vacuum Society Meeting, San Fransisco, CA., USA, Nov. 12-17 (2006)

76.  Jiyoung Kim, Bongki Lee, SangHee Lee, HyunJung Shin, Jaegab Lee, “Selective Atomic Layer Deposition of ZrO2 and Cu Using Soft Lithography”, 2006 Joint Internation Meeting of the Electrochemical Society, Cancun, Mexico, Oct. 29-Nov.3 (2006)

77.  Dongkyu Cha, Bongki Lee, Moon J. Kim, Jiyoung Kim, Sanghee Won, HyunJung Shin, Jaegab Lee, Myung Mo Sung, “Fabrication and characteristics of TiO2 nanotubes using atomic layer chemical vapor deposition,”, 2006 Joint Internation Meeting of the Electrochemical Society, Cancun, Mexico, Oct. 29-Nov.3 (2006)

78.  M. Kim, T. Lee, J. Kim, R. Wallace, B. Gnade, “Si-Based Resonant Tunneling Devices Using UHV wafer bonding,” 2006 Joint Internation Meeting of the Electrochemical Society, Cancun, Mexico, Oct. 29-Nov.3 (2006)

79.  J. Jeon, H. Floresca, J. Kim, M.J.Kim, “In-situ nano fabrication and assembly by FIB/SEM with a nanomanipulator,” The 16th International Microscopy Congree, Sapporo, Japan, Inter. Microsc. Congress, 16, 1115 (2006)

80.  F. Mantiziba, I. Gory, C. Nistorica, M. Ellis, R. Wallace, J. Kim, M. Kim, B. Gnade, “Approaches to reduce stiction, friction and wear in silicon microelectromechanical system (MEMS),” TexMEMS VIII, Richardson, TX, Oct. 9, 2006

81.  J. Jeon, H. C. Floresca, J. Kim, B. Gnade, M. Kim, “Combination of Nano Fabrication and Assembly by FIB/SEM with a nanomanipulator,” TexMEMS VIII, Richardson, TX, Oct. 9, 2006

82.  Jiyoung Kim, Moon Kim, “Metal Oxide Nanotube Fabricated by Atomic Layer Deposition”, 5th US-Korea Workshop on Nanostructured Materials & Manufacturing, Los Angeles, CA, Aug. 08 – Aug. 09, 2006

83.  D.K.Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace, B.E.Gnade, M.J. Kim, “Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM,” Microscopy and Microanalysis 2006, Chicago,, IL, July 30 – Aug. 3, 2006

84.  J. Kim, D. Cha, B. Lee, M. J. Kim, S. Won, H. Shin, J. Lee, ”Electrical Characteristics of TiO2 Nanotubes Fabricated by Atomic Layer Deposition”, Atomic Layer Deposition 2006, Seoul, Korea, July 24-26, 2006

85.  J. Kim and M. Kim, “Stand-Alone TiO2 Nanotube Devices”, Gordon Conference – Nanostructure Fabrication 2006, Titton School, New Hampshire, Jul. 16-19, 2006

86.  J. Kim and Moon Kim, “Single TiO2 Nanotubes for Nano-Sensors”, 2006 NanoMaterials for Defense Applications, Virginia Beach, VA, May 1-4 2006

87.  MRS 2005 Spring

88.  D. Jeong, S. Won, H. Shin, J. Lee and J. Kim, “ Nanotubes Alignment Using Magnetic Field and Self-Assembled Monolayers”, International Conference on Electroceramics, NM-10, Seoul, Korea, Jun. 14, 2005

89.  D. Cha, R. M. Wallace, B. E. Gnade, M.J. Kim, D. Jeong, and J. Kim, “ In-situ Electrical Characterization on Nanotubes Using Nanomanipulators”, International Conference on Electroceramics, NM-30, Seoul, Korea, Jun. 14, 2005

90.  T. Oh, B. Gnade, M. J. Kim, R. M. Wallace, J. Kim, “Thermal Stability of Mo Based Metal Gate Stacks for Advanced CMOS Applications”, International Conference on Electroceramics, P-I-14, Seoul, Korea, Jun. 14, 2005

91.  J. Kim, S. Won, D. Jeong, H. Shin, J. Lee, “ALD Metal Oxide Nanotube Fabrication”, AVS 5th International Conference on Atomic Layer Deposition 2005, San Jose, CA, Aug. 10, 2005

92.  P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,” International Conference on Solid State Devices and Materials, Kobe, Japan, September 15, 2005.

93.  P. Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “Thermal Stability of Amorphous LaAlO3 Thin Films on Si(100) Deposited by Plasma Sputtering and Molecular Beam Deposition,” SRC Techcon 2005, Portland, OR, October 25, 2005.

94.  P. Zhao, J. Kim, M. J. Kim, B. E. Gnade, R. M. Wallace, “The Effects of Nitrogen and Silicon Compositions on Work Function and Thermal Stability of MoXSiYNZ/SiO2 Gate Stack,” SRC Techcon 2005, Portland, OR, October 24, 2005.

95.  P. Sivasubramani, P. Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “The Effect of Nitrogen Incorporation on the Thermal Stability of La, Hf-aluminate Gate Stacks on Silicon,” AVS 52nd International Symposium, October 31, 2005.

96.  J. Kim, D. Jeong, S. Won, H. Shin, J. Lee, “Selective Atomic Layer Deposition (ALD) for Fabrication of Metal and Oxide Nanotubes,” AVS 52nd International Symposium, Boston, MA, Nov. 2, 2005.

97.  D. K. Cha, J Huang, T Zheng, J.B Jeon, T.H Lee, Jiyoung Kim, R.M Wallace, B.E Gnade and M.J Kim, “In-situ nano fabrication and electrical characterization for TiO2 nanotubes using dual beam focused ion beam and nanomanipulator,” MRS Fall Symposium, November 29, 2005.

98.  I. S. Jeon, J. Lee, P. Zhao, P. Sivasubramani, T. Oh, H. Kim, M. J. Kim, B. E. Gnade, J. Kim, R. M.  Wallace, “A Novel Methodology on Tuning Work Function of Metal Gate Using Stacking Bi-Metal Layers”, 2004 IEEE International Electron Devices Meeting (IEDM)

99.  D. Jeong, H. Shin, J. Lee, J. Kim, “One Directional Alignment of the Metal/Oxide Hybrid Nanotubes with Self-Assembled Monolayers”, 2004 Fall Symposium of Materials Research Society

100.          C. Nistorica, J. Liu, I. Gory, G. Skidmore, F. Mantiziba, B. Gnade, J. Kim, “Friction and Wear Properties of ALD Coated Microelectromechanical System”, 2004 Fall Symposium of Materials Research Society

101.          P. Sivasubramani, P. Zhao, I. S. Jeon, J. Lee, J. Kim, M. J. Kim, B.E. Gnade, R. M. Wallace, “Characterisitics of MoxSiy Gate Electrodes for Advanced CMOS Applications”, 2004 American Vacuum Society (AVS) Meeting

102.          P. Zhao, P. Sivasubramani, I. S. Jeon, J. Kim, M. J. Kim, B.E. Gnade, R. M. Wallace, “ Physical and Electrical Properties of MoxNy and MoxSiYNZ as Gate Electrode Materials for MOS Devices”, 2004 American Vacuum Society (AVS) Meeting

103.          Daekyun Jeong, Nohheon Park, Myungmo Sung, Jaegab Lee, Hyun Jung Shin, Jiyoung Kim, “The Novel Fabrication Method for Fabrication of Metal/Oxide Nano Tubes”, M5-29. 2004 Spring Symposium of Materials Research Society, San Fransisco, USA (2004. 4. 12-16)

104.          Daekyun Jeong, Nohheon Park, Hyunjung Shin, Jaegab Lee, Myungmo Sung, Jiyoung Kim, “Metal And Oxide Stack Layer Formation Using a Novel Selective Deposition for Flexible Display Applications”, I6-10, Spring Symposium of Materials Research Society, San Fransisco, USA (2004. 4. 12-16)

105.          Daekyun Jeong, Jinwoo Lee, Jiyoung Kim, “ZrO2 and TiO2 Multilayer Gate Dielectrics Using MOALD”, 7.14 P, The 16th International Symposium on Integrated Ferroelectrics, Gyungju Hyundai Hotel  (Gyungju, Korea), (2004, 4. 5-8)

106.          D. Jeong, N. Park, J. Kim, “Effects of Oxydizers on the MO-ALD ZrO2 Thin Films”, 13.08 P, The 16th International Symposium on Integrated Ferroelectrics, Gyungju Hyundai Hotel, (Gyungju, Korea), (2004, 4. 5-8)

107.          J. Lee, T. Oh, J. Kim, “PZT Capacitors on Top of CrTiN/TiN Double Barrier Layers”, 10-06P, The 16th International Symposium on Integrated Ferroelectrics, 13.08 P, Gyungju Hyundai Hotel, (Gyungju, Korea), (2004, 4. 5-8)

108.          T. Oh, J. Lee, J. Kim, “Effects of Bottom Electrode Conditions on Characteristics of BLT Capacitors”, 11.35 P, The 16th International Symposium on Integrated Ferroelectrics, 13.08 P, Gyungju Hyundai Hotel, (Gyungju, Korea), (2004, 4. 5-8)

109.          D.K. Jeong, N.H. Park, S.H. Jung, W.-G. Jung, H.J. Shin, J.G. Lee and J.Y. Kim, "Novel deposition of the metal oxide nanotube and nanocable on filter materials using atomic layer deposition and self-assembled monolayer", The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials, P2-IV-25. Jeju Jungmun Hyatt Hotel, Korea (2003. 11. 5 - 8)

110.          S.H. Jung, D.K. Jeong, J.Y. Kim and W.-G. Jung, "Fabrication of CdS thin film pattern by CBD methode using the self-assembled monolayer", The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials, P1-II-83 . Jeju Jungmun Hyatt Hotel, Korea (2003. 11. 5 - 8)

111.          Daekyun Jeong, Juwhan Park, Nohheon Park, Hyunjung Shin, JaeGab Lee, Myung-Mo Sung and Jiyoung Kim, "A Novel Selective Deposition Using Soft Lithography Self-Assembled Monolayers" 2003 Materials Research Society Spring Meeting P9.14 , San Francisco Marriott & Argent Hotels , USA (2003. 4. 21-25)

112.          Sungjin Hong, Seob Lee, Heejung Yang, Jiyoung Kim, Jaegab Lee, Beomseok Cho, Changoh Jeong, Kyuha Chung, "Low Temperature Growth of Cu Silicide At The Ag(Cu)/Si Interface Upon Annealing And Its Effects On Adhesion, Resistivity, And Ohmic Contacts", 2003 Materials Research Society spring Meeting E3.15 , San Francisco Marriott & Argent Hotels , USA (2003. 4. 21-25)

113.          Doosick Park, Jaebum Park, Heejung Yang, Hyunjung Shin, Jiyoung Kim, Jaegab Lee, "Selective Cu Filling of Vias By Using ALD-Like Cu And Self-Assembled Monolayers (SAMs)", 2003 Materials Research Society spring Meeting E3.18 , San Francisco Marriott & Argent Hotels , USA (2003. 4. 21-25)

114.          Heejung Yang, Seob Lee, YeonKyu Ko, Jiyoung Kim, Jaegab Lee, Cheonman Shim, Donggeon Jung, "Enhanced Adhesion Property Of Cu On Low-k By Using Ti Glue Layer, B Dopant And N2 Plasma Treatment", 2003 Materials Research Society spring Meeting E3.27 , San Francisco Marriott & Argent Hotels , USA (2003. 4. 21-25)

115.          Seongho-Kong, Daekyun-Jeong and Jiyoung Kim, "Crystallization Behaviors of Zirconium Based Oxide Films with Glass Forming Additives", 15th International Symposium on Integrated Ferroelectrics, Colorado Springs, USA (2003. 3. 9-12)

116.          Juwhan Park, Daekyun-Jeong, Nohheon-Park and Jiyoung Kim, "Microstructure and Electrical Properties of ZrO2 Films Deposited by MO-ALD", 2003 AVS Topical conference on Atomic Layer Deposition, Santa Clara Convention Center pp. 42-43 (2003, 3, 3-6)

117.          Daekyun Jeong, Juwhan Park, Nohheon Park, Hyunjung Shin, JaeGab Lee, Myung-Mo Sung*, Jiyoung Kim, "Fabrication of Cu/ZrO2/Si Structure Capacitors by a Novel Selective Deposition Technique on Patterned Self-Assembled Monolayers(SAMS)”, 2003 AVS Topical conference on Atomic Layer Deposition, Santa Clara Convention Center, pp 225-226 (2003, 3, 3-6)

118.          SeongHo Kong, Nohheon Park, Daekyun Jeong, and Jiyoung Kim, "Effects of Glass Forming Materials of Zirconium Based Oxide Films for Alternative Gate Dielectric Applications", International Symposium on Integrated Ferroelectrics (2003, 3, 12)

119.          Juwhan Park, Bongsik Choi, Nohhon Park and Jiyoung Kim, "ZrO2 Thin Films Deposited by MO-ALD Using Zr t-butoxide", 2002 AVS Topical conference on Atomic Layer Deposition, Seoul, Korea (2002 , 6)

120.          Juhwan Park, Bongsik Choi, Nohhon Park, Hyun Jung Shin, Jas Gab Lee, and Jiyoung Kim, "Characteristics of ZrO2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Application", 14th International Symposium on Integrated Ferroelectrics, Nara, Japan (2002. 5. 28- 6. 1)

121.          Chang-Bae Jeon, Seong-Ho Kong, Jinho Ahn, Jiyoung Kim, "Characteristics of zirconium based amorphous thin films deposited by co-sputtering“, 14th International Symposium on Integrated Ferroelectrics, Nara Japan (2002. 5. 28- 6. 1)

122.          Chang-Bae Jeon, Seong-Ho Kong and Jiyoung Kim, "Characteristics of zirconium based amorphous thin films for gate dielectric applications" 2002 MRS spring meeting, San Francisco, USA, p56 (2002, 4)

123.          Juwhan Park, Bongsik Choi, Nohhon Park and Jiyoung Kim, "ZrO2 gate dielectrics prepared by atomic layer deposition", 2002 MRS spring meeting, San Francisco, USA, P52 , B4.13 (2002, 4)

124.          J.M. Koo, S.K. Hong, S.J. Yeom, J.S. Roh, and J. Kim, "High Thermal Stability of Poly-Si Node CrTiN/TiN Double Barrier Layers for High Density Ferroelectric Memory Application", IEDM 2001, technical digest, p.279 ,Washington DC , USA (2001,  12)

125.          H. Min, C. Jun, W. Lee, J. Lee, J. Kim, "Effects of Nitridation Treatments for SBT/Ta2O5 Stack Gate Capacitors", 13th International Symposium on Integrated Ferroelectrics, Abstracts Book p.68, ISIF 2001, Colorado Springs, USA (2001, 3)

126.          H.C. Park, J. Kim, W. Lee, J. Lee, "Characteristics of Mixed Composition Layered P(L)ZT Thin Films Derived by Chemical Solution Deposition", 13th International Symposium on Integrated Ferroelectrics, Abstracts Book p.127, ISIF 2001, Colorado Springs, USA (2001, 3)

127.          J.M. Koo, J. Park, J. Kim, "Electrical Responses of Integrated SrBi2Ta2O9-Based Ferroelectric Memory Devices on Various Input Signal Pulses", 13th International Symposium on Integrated Ferroelectrics, Abstracts Book p.133, ISIF 2001, Colorado Springs, USA (2001, 3)

128.          Taeho Kim, Hyung-sub Min, June-Mo Koo, Jae-Gab Lee, Jaeheon Han and Jiyoung Kim, "Nitridation of Si Surface Using ICP for MeFIS-FET Applications", 3rd Asian Meeting on Ferroelectrics, AMF-3 Technical Program Book p.456, HongKong, (2000. 12. 15)

129.          June-Mo Koo, Taeho Kim Hyung-sub Min, Jin-Ho Ahn, Jae-Gab Lee and Jiyoung Kim, "Influences of Hydrogen Damages in Feffoelectric Thin Film Capacitors", 3rd Asian Meeting on Ferroelectrics, AMF-3 Technical Program Book p.457, HongKong, (2000. 12. 15)

130.          J. Kim, T. Kim, H.-S. Min, J.-M. Koo, W. Lee, and J.-G. Lee, "MeFINS Structure Capacitors for FET Type Ferroelectric Memory Applications" 198th Elcectrochemical Society Meeting (Phoenix, Arizona) (2000. 10. 25)

131.          June-Mo Koo, TaeHo Kim, and Jiyoung Kim, "Hydrogen Induced Degradation Phenomena of PZT Ferroelectric Capacitors", 12th IEEE International Symposium on the Applications of Ferroelectrics ISAF2000, ISAF 2000 Technical Program Book, p. 128, (Hawaii, USA)  (2000. 7. 31)

132.          Jiyoung Kim, June-mo Koo, Tae-Ho Kim, Ilwan Bang, "Effect of Ti/Ir Hybrid Top Electrodes of  PZT Capacitor on Hydrogen Related Degradation", 12th International Symposium on Integrated Ferroelectrics, Abstract Book p.388, ISIF 2000, (Aachen, Germany) (2000. 3)

133.          Tae-Ho Kim, Hyung-Seok Kim, Jiyoung Kim, "Investigation on Various  Insulator Layer for MFIS Capacitors", 12th International Symposium on Integrated Ferroelectrics, Abstract Book p.292, ISIF 2000, (Aachen, Germany) (2000, 3)

134.          Young-Geun Kim, Jiyoung Kim, "Thin Film Electric Resistance Probe for Corrosion Rate Measurement”, 194th Elcectrochemical Society Meeting, (Boston/MA, USA) (1998. 11.)

135.          Sungwon Jung, Ilhwan bang, Jae Gab Lee, and Jiyoung Kim, "Sol-gel PZT Ferroelectric Capacitor for Ir Family Electrodes", The 3rd international Meeting of Pacific Rim Ceramic Societies (PacRim3), (Kyongju, Korea) (1998. 9)

136.          Ilhwan bang, Jae Gab Lee, and Jiyoung Kim, "H2 Damage on Ferroelectric Pb(Ti, Zr)O3 Thin Film Capacitor with Ir Electrodes", The 3rd international Meeting of Pacific Rim Ceramic Societies (PacRim3), (Kyongju, Korea) (1998. 9)

137.          Sungwon Jung, Ilhwan bang, Jae Gab Lee, and Jiyoung Kim, "Characteristics of Sol-gel PZT Ferroelectric Capacitor for Ir Electrodes.", The 4th International Conference on Electronic Materials (IUMRS-ICEM-98) (Cheju, Korea) (1998. 8.)

138.          Sungwon Jung, Ilhwan bang, Jiyoung Kim, "Ir Electrodes for Ferroelectric Capacitor Applications" The 1997 MRS Fall Meeting (Boston, USA), (1997.12)

139.          Jiyoung Kim, "The Electrical Characteristics of Sol-Gel Derived PLZT Thin Films", The 9th International Meeting on Ferroelectricity (Seoul, Korea) p.61, (1997. 8)

140.          Sungwon Jung, Ilhwan bang, Jiyoung Kim, "The Asymmetric Behaviors of PZT Thin Film Capacitors with Different Top Electrode Metals", The 9th International Meeting on Ferroelectricity (Seoul, Korea) p.89, (1997. 8)

141.          Jiyoung Kim, C. Sudhama, R. Khamankar, B. Jiang, J. Lee, S. Summerfelt, B. Gnade, "Investigation of Electrode Materials for Metal-Ferroelectric-Pt Capacitors for DRAM Applications", 184th Electrochem. Soc. Meeting, New Orleans/LU, USA) (1993. 10.)

142.          V. Chikarmane, C. Sudhama, Jiyoung Kim, R. Khamankar and J. Lee, "Sputtered PZT Thin Films with Low-Thermal Budget for I.C. Applications", the 1992 Electronic Mater. Conf., (Boston/MA, USA) (1992, 6)

143.          Jiyoung Kim, V. Chikarmane, C. Sudhama, R. Khamankar, J. Lee and A. Tasch, "The Enhancement of Lifetime of Sputtered Lead Zirconate Titanate Thin Films under A.C. Stressing", the 1992 Electronic Mater. Conf., (Boston/MA, USA) (1992, 6)

144.          Jiyoung Kim, V.Chikarmane, C. Sudhama, J .Lee and A. Tasch, "The Dependence of Electrical Device Properties on the Zr/Ti ratio in Reactively Sputtered Ferroelectric Pb(ZrxTi1-x)O3 Thin Films for Memory Applications", the 1992 TMS Annual Meeting, March 1992, (San Diego/CA, USA) (1992, 3)

145.          V. Chikarmane, Jiyoung Kim, C. Sudhama, J. Lee and A Tasch, "Growth and Characterization of Reactively Sputtered Ferroelectric Pb(ZrxTi1-x)O3 Thin Films for Memory Applications", the 3rd. Annual New Mexico Symposium on Ceramics and Advanced Materials (Albuquerque/NM, USA) (1991, 10)

146.          V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee and A. Tasch, "Electrical Characteristics and Structure-Property relationships in DC-Magnetron sputtered PZT thin film capacitors annealed in oxygen and nitrogen for ULSI DRAM Applications", the 10th. Annual Symposium on Electronic Materials Processing and Characterization, June, 1991, (Richardson/TX, USA) (1991, 6)

147.          C. Sudhama, V. Chikarmane, Jiyoung Kim, J. Lee and A. Tasch, "Electrically Induced Improvement in the Properties of Thin Ferroelectric films for NVRAM and DRAM Applications", the 10th. Annual Symposium on Electronic Materials Processing and Characterization, June, 1991, (Richardson/TX, USA) (1991, 6)

148.          V. Chikarmane, C. Sudhama,  Jiyoung Kim, J. Lee and A. Tasch, "The Effects of Pb Compensation and Thermal Processing on the Phase Content and Electrical Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Film Capacitors", the SPIE Technical Symposium (Dallas/TX, USA) (1991, 5)

149.          C. Sudhama, V. Chikarmane, Jiyoung Kim, J. Lee and A. Tasch, "Measurement Techniques for the Characterization of Thin Ferroelectric Films for Memory Applications", the SPIE Technical Symposium (Dallas/TX, USA) (1991, 5)