PRESENTATIONS
1.
J. Kim,
“In-situ XPS half cycle study of ALD,” 2nd International
Conference on Microelectronics and Plasma,” (Sep. 17- Sep. 25) Sep.
23. 2009,
2.
J. Kim, H.C.
Kim, B. Lee, A. Hande, E.M. Vogel, M.J. Kim, and R.M. Wallace,
“ALD of High-k Gate Dielectrics on Si and Alternative Substrates,
AVS 55th International Symposium, October 21, 2008,
Boston, MA, USA
3.
Jiyoung Kim,
D. K. Cha, O. Lourie, M. J. Kim,
“Characterizatio of nanodevices by using in-situ TEM-STM
(Invited talk), 2008 M&M
Meeting, Jun. 29 – Jul.3,
2008, Albuquerque, NM
4.
Jiyoung Kim,
Dongkyu Cha, Moon J. Kim, “Single nanotube and nanowire device
fabrication using focused ion beam system,” The Sixth Pacific Rim
International Conference on Advanced Materials and Processing,
Jeju/Korea, Nov. 5-9, 2007
5.
C. Bae, H. Shin and J. Kim, “Fabrication of Nanoscale Tubular Structures and Capsules
of Oxides by ALD,” 212th Meeting of the Electrochemical
Society,
6.
Jiyoung Kim,
“ALD for Deposition Equipment for Nano-Regime,” Materials Science
and Engineering Colloquia,
7.
Jiyoung Kim,
“Resistance RAM (ReRAM),”
8.
Jiyoung Kim,
“HfO2/SiO2 Wedding Cake,” SEMATECH, Austin/TX,
May. 25. 2006
9.
Jiyoung Kim,
“Atomic Layer Chemical Vapor Deposition for Microelectronics and
Nanotechnology Applications,” Materials Science and Engineering
Colloquia,
10.
Jiyoung Kim,
“Atomic Layer Chemical Vapor Deposition (ALCVD) for Microelectronics
and Nanotechnology Applications,” Materials Science and Engineering
Colloquia,
11. Jiyoung
Kim, “Alternative Gate Dielectrics for the Next Generation CMOS
applications,” Advanced
Materials
Engineering Colloquia,
12.
Jiyoung
Kim, JuneMo Koo, “Novel dual oxidation barrier layers for high
density ferroelectric memory applications,” 3rd Workshop
on high-k dielectric / ferroelectric materials and devices,
13.
Jiyoung Kim, “Fabrication and Applications of Ferroelectric Thin
Films,” 5th Lecture Series on Nano Materials and
Technology,
14.
Jiyoung Kim, “Ferroelectric Memory Devices,” Materials Science and
Engineering Colloquia, GIST, KwangJu/Korea, Feb. 23. 2000
15.
Jiyoung Kim, “PLZT Thin Film Capacitors for Gb Generation DRAM
Applications,” 1996 Spring Symposium of the Korean Materials
Research Society, TaeGu/Korea, May. 17. 1996 (Invited)
International Conference Presentation
1.
T. J. Park, H.
Kim, M. Milojevic, B. Lee, R. M. Wallace, J. Kim, X. Liu, M.
Rousseau, J. H. Yi, H. Li, D. Shenai, J. Suydam, “In-situ half-cycle
XPS investigation of La-aluminate formation during atomic layer
deposition, 56th American Vacuum Society, Nov. 8-13, San
Jose, CA (2009)
2.
B. Lee, G.
Mordi, M. Kim, K. Cho, Y. Chabal, E. M. Vogel, R. M. Wallace,
“Graphene Field-Effect Transistors with Atomic Layer Deposited
High-k Dielectrics,” 6th International Symposium on
Advanced Gate Stack Technology (ISAGST), W Hotel, San Francisco, CA,
Aug. 23-26 (2009)
3.
Hyun-Chul Kim,
Tae Joo Park, Bongki Lee,
M. Milojevic,
R. M. Wallace,
Jiyoung Kim, “Half-cycle atomic layer deposition study of lanthanum
oxide film using in-situ
monochromatic x-ray photoelectron spectroscopy,” 6th
International Symposium on Advanced Gate Stack Technology (ISAGST),
W Hotel, San Francisco, CA, Aug. 23-26 (2009)
4.
D. Cha, S. Y.
Park, S. J. Ahn, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I.
Jung, M. J. Kim, J. Kim, “In-situ observation and characterization
of structural evolution in a phase-change memory device by TEM-STM,”
Microscopy and Microanalysis 2009, Richmond, VA, USA, July 26-30
(2009)
5.
D. Cha, M. Lee,
H. Shin, M. J. Kim, J. Kim, “Functionalization of Single TiO2
Nanotube for Bio-Sensor Applications,” Microscopy and Microanalysis
2009,
6.
B. Lee, G.
Mordi, Y.J. Chabal, K. J. Cho, M. J. Kim, E. M. Vogel, R. M.
Wallace, L. Colombo, J. Kim, “High-k dielectric deposition using ALD
for graphene-based nanoelectronics,” AVS 9th
International conference on atomic layer deposition (ALD 2009),
Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)
7.
H. Kim, M.
Milojevic, B. Lee, T. J. Park, R. M. Wallace, J. Kim, X. Liu, M.
Rousseau, J. Yi, H. Li, D. Shenai, J. Suydam, “In-situ half cycle
XPS investigation of La-silicate formation during atomic layer
deposition using La(iPrfAMD)3 and ozone on Si substrate,”
AVS 9th International conference on atomic layer
deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July
19-22 (2009)
8.
M. Lee, D. Cha,
H. Shin, M. J. Kim, J. Kim, “Atomic layer deposited TiO2 nanotube
devices for bio-sensor applications,” AVS 9th
International conference on atomic layer deposition (ALD 2009),
Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)
9.
C. Bae, H. Kim,
H. Yoo, J. Kim, H. Shin, “Atomic layer deposition of nanotubular and
inverse opaline structure of anatase TiO2,” AVS 9th
International conference on atomic layer deposition (ALD 2009),
Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)
10.
H. Kim, T. J.
Park, K. J. Chung, R. M. Wallace, J. Kim, “Effects of ozone on
characteristics of HfO2 films deposited by atomic layer deposition,”
AVS 9th International conference on atomic layer
deposition (ALD 2009), Portola Hotel & Spa, Monterey, CA, USA, July
19-22 (2009)
11.
C. Bae, H. Kim,
H. Yoo, J. Kim, H. Shin, “One-step patterning of inorganic thin
films using atomic layer deposition,” AVS 9th
International conference on atomic layer deposition (ALD 2009),
Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)
12.
T. W. Kim, B.
Lee, B. MacFarlane, J. Kim, “Conformal ALD coating for photonic
integrated circuit applications,” AVS 9th International
conference on atomic layer deposition (ALD 2009), Portola Hotel &
Spa, Monterey, CA, USA, July 19-22 (2009)
13.
T. J. Park, K.
J. Chung, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, J. Ahn, X. Liu,
J. Yi, H. Li, M. Rousseau, D. Shenai, J. Suydam, “Alternative
oxidant effects on chemical structure and electrical properties of
atomic-layer-deposited La2O3 films on Si using (fAMD) La and ozone,”
Portola Hotel & Spa, Monterey, CA, USA, July 19-22 (2009)
14.
T. J. Park, K.
J. Chung, J. Ahn, H. C. Kim, R. M. Wallace, J. Kim, X. Liu, H. J.
Yi, M. Rousseau, D. Shenai, “Precursor dependent rutile phaswe
formation of atomic-layer-deposited TiO2 film on Ru electrode for
DRAM capacitor applications,” AVS 9th International
conference on atomic layer deposition (ALD 2009), Portola Hotel &
Spa, Monterey, CA, USA, July 19-22 (2009)
15.
J. Kim, D. K.
Cha, S. Y. Park, M. J. Kim, “In-situ Electrical Characterization in
Electronic Microscopy,” 2009 US-Korea Conference,
16.
B. Lee, T. J.
Park, A. Hande, K. J.
Chung, M. J. Kim, R. M. Wallace, J. Kim, “Chemical and electrical
properties of ALD La2O3 films grown with
La-FMD and alternative oxidants,” INFOS 2009, Clare College,
Cambridge, UK, Jun. 29- Jul. 1 (2009)
17.
D. Cha, S. J.
Park, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I. Jung, M. J.
Kim, J. Kim, “A Direct observation on the structural evolution of
memory-switching phenomena using in-situ TEM,” 2009 Symp. VLSI
Technology,
18.
B. Coss, W. Y.
Loh, J. Oh, G. Smith, C. Smith, H. Adhikari, B. Sassman, S.
Parthasrathy, J. Barnett, P. Majhi, R. M. Wallace, J. Kim, R. Jammy,
“CMOS Band-Edge Schottky Barrier Heights Using Dielectric-Dipole
Mitigated (DDM) Metal/Si for Source/Drain Contact Resistance
Reduction,” 2009 Symp. VLSI Technology,
19.
B. Lee, G.
Mordi, T. Park, L. Goux, Y. J. Chabal, K. Cho, E. M. Vogel, M. J.
Kim, L. Colombo, R. M. Wallace, J. Kim, “Atomic-Layer-Deposited Al2O3
as Gate Dielectrics for Graphene-Based Devices,”
215th ECS Meeting, San Francisco, CA, May 24-29
(2009)
20.
G. Lee, C.
Gong, A. R. Pirkle, A. Venugopal, B. Lee, S.Y. Park, L. Goux, M.
Acik, R. Guzman, Y. J. Chabal, J. Kim, E. M. Vogel, R. M. Wallace,
M. J. Kim, L. Colombo, K. Cho, “Materials Science of Graphene for
Novel Device Applications,” 215th ECS Meeting, San
Francisco, CA, May 24-29 (2009)
21.
C. Hinkle, M.
Milojevic, A. Sonnet, H. Kim, J. Kim, E. M. Vogel, R. M. Wallace,
“Surface Studies of III-V Materials: Oxidation Control and Device
Implications,” 215th ECS Meeting, San Francisco, CA, May
24-29 (2009)
22.
H. Kim, B. Lee, M. Milojevice, R. M. Wallace, J. Kim, X. Liu, M.
Rousseau, J. H. Y, D. Shenai, J. Suydam, “In-situ XPS study of
La-based oxide film deposited by ALD using
tris(N,N’-diisopropylformanidinato) La precursor,”
2009 MRS Spring Meeting, San Francisco, CA, Apr. 13-17 (2009)
23.
Hyun-Chul Kim,
24.
M. Milojevic,
R. Contreras-Guerrero,* H. C. Kim, M. Lopez-Lopez* J. Kim, R.M.
Wallace, “Control of interfacial oxide formation for dielectrics in
direct contact with
25.
Mingun Lee,
Dongkyu Cha, Hyunjung Shin, M.J. Kim, Jiyoung Kim, “Fabrication
and characterization of single TiO2 nanotube for chemical
and bio sensor applications,” 2009 TMS Meeting, San Francisco, CA,
Feb. 15-19 (2009)
26.
Tae Wook (Sam) Kim,
Jiyoung Kim, Duncan McFarlane, “Nano-Scale
Trench Filling Using Atomic Layer Deposition (ALD),”
2009 TMS Meeting, San Francisco, CA, Feb. 15-19 (2009)
27.
C.L. Hinkle,
A.M. Sonnet, M. Milojevic, F.S. Aguirre-Tostado,
J. Kim, R.M. Wallace, B.
Brennan, G.J. Hughes, E.M. Vogel, “Surface states, interface traps,
and Fermi level pinning correlation to the interface oxidation
states of Ga,” 39th IEEE Semiconductor Interface Specialists
Conference (SISC 2008) December 11-13, 2008, Catamaran Resort Hotel,
San Diego, CA, USA
28.
A.M. Sonnet,
C.L. Hinkle, M.N. Jivani, J.
Kim, R.A. Chapman, R.M. Wallace, E.M. Vogel, “Performance
Enhancement of n-Channel Inversion Type InxGa1-xAs
MOSFET by Effective Surface Passivation Using Ex-Situ Deposited Thin
Amorphous Si Layer,” 39th IEEE Semiconductor Interface Specialists
Conference (SISC 2008), December 11-13, 2008, Catamaran Resort
Hotel, San Diego, CA, USA
29.
M. Milojevic,
B. Brennan, F.S. Aguirre-Tostado, C.L. Hinkle, H.C. Kim, B. Lee,
G.J. Hughes, E.M. Vogel, J.
Kim, R.M. Wallace, “In-situ XPS investigation of the “clean-up”
effect through half-cycle ALD reactions on
30.
B. Lee, S.Y.
Park, H.Y. Kim, K.J. Cho, E.M. Vogel, M.J. Kim, R.M. Wallace, and
J. Kim, “Conformal Dielectric Layers Deposited by ALD (Atomic Layer
Deposition) for Graphene-based Nanoelectronics,” AVS 55th
International Symposium, October 21, 2008, Boston, MA, USA.
31.
J. Kim,
H.C. Kim, B. Lee, A. Hande, E.M. Vogel, M.J. Kim, and R.M. Wallace,
“ALD of High-k Gate Dielectrics on Si and Alternative Substrates, (Invited
talk), AVS 55th International Symposium, October
21, 2008, Boston, MA, USA
32.
E.M. Vogel,
C.L. Hinkle, A. Sonnet, F.S. Aguirre-Tostado, M. Milojevic, K.J.
Choi, H.C. Kim, J.G. Wang, H.C. Floresca,
J. Kim, M.J. Kim, R.M.
Wallace, “Electrical and
Physical Properties of High-k Gate Dielectrics on
33.
A. Hande, B.
Lee, H.C. Kim, R.M. Wallace,
J. Kim, X. Liu, M. Rousseau, J. Yi, D.V. Shenai, J. Suydam,
“Atomic Layer Deposition of Lanthanum Based Oxides for High-K Gate
Dielectrics,” AVS 55th International Symposium, October
23, 2008, Boston, MA, USA
34.
M. Milojevic,
B. Brennan, H.C. Kim,
F.S. Aguirre-Tostado, J. Kim,
R.M. Wallace, G. Hughes, “In-situ Studies of Al- and La-oxide on In0.53Ga0.47As,”
AVS 55th International Symposium, October 23, 2008,
Boston, MA, USA
35.
M. Milojevic,
C.L.Hinkle, F.S. Aguirre-TostadoB. Lee,
S.J.McDonnell, K.J.Choi,
H.C. Kim, A.M.Sonnet, G. J.Hughes, E.M.Vogel,
J. Kim, R.M. Wallace,
“In-situ ALD Studies of high-k dielectric/high mobility interfaces,”
E-
36.
B.K. Lee, A.
Hande, K. J Choi, H. C Kim,
J. Kim, M. Milojevik, F. S Aguirre-Tostado, R. M Wallace, M.
Rousseau, D. Shenai, H.i Li and J. Suydam, “Atomic Layer Deposition
of Lanthanum Aluminate and Lanthanum Oxide Thin Films for High-K
Gate Dielectrics”, MRS Spring Meeting, March 24-28, 2008, San
Francisco, CA, USA
37.
C. L. Hinkle,
A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim,
J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and
p-type GaAs oxide growth and its effects on frequency dispersion
characteristics,” 15th Workshop on Dielectrics in Microelectronics,
WoDiM 2008, 23rd - 25th June 2008, Bad Saarow (Berlin)
38.
M. Milojevic,
F. S. Aguirre-Tostado, C. L. Hinkle, B. Lee, S. J. McDonnell, K. J.
Choi, H. C. Kim, A. M. Sonnet, G. J. Hughes, E. M. Vogel,
J. Kim and R. M. Wallace,
“High-κ dielectrics for
39.
J. Kim,
B. Brennan, F. S. Aguirre-Tostado, C. Hinkel, H. C. Kim, B. Lee, G.
Hughes, E. Vogel and R. M. Wallace, “In-situ XPS study of ALD Al2O3
deposition on InxGa1-xAs,” 5th International Symposium on Advanced
Gate Stack Technology (ISAGST), September 28- October 1, 2008,
Lakeway Resort & Spa – Austin, TX, USA
40.
BK Lee, S-Y
Park, H-C Kim, K. Cho, E. Vogel, M. Kim, R. Wallace, and J. Kim, “Al2O3
Gate Dielectric Layer Deposited by ALD (Atomic Layer Deposition) For
Graphene-based Nanoelectronics,” 5th International Symposium on
Advanced Gate Stack Technology (ISAGST), September 28- October 1,
2008, Lakeway Resort & Spa – Austin, TX, USA
41.
A. Hande, B.
Lee, HC Kim, R. Wallace, J.
Kim, X. Liu, M. Rousseau, J. Yi, D. Shenai and J. Suydam,
“Atomic Layer Deposition of Lanthanum based Nano-Laminates for
High-K Gate Dielectrics,” 5th International Symposium on Advanced
Gate Stack Technology (ISAGST)September 28- October 1, 2008, Lakeway
Resort & Spa – Austin, TX, USA
42.
E. Vogel, A.
Sonnet, C. L. Hinkle, F. S. Aguirre-Tostado, M. Milojevic,
J. Kim, and R.M. Wallace,
“Electrical and Physical Properties of GaAs MOS Devices with Al2O3/a-Si
Gate Dielectric Stacks,” 5th International Symposium on Advanced
Gate Stack Technology (ISAGST), September 28- October 1, 2008,
Lakeway Resort & Spa – Austin, TX, USA
43.
M. Milojevic,
H. C. Kim, F. S. Aguirre-Tostado, B. Lee, C. Hinkle, E. Vogel, R. M.
Wallace, Jiyoung Kim, “Evaluation
of oxygen gathering effect on high-k/GaAs interface using half cycle
atomic layer deposition and in-situ XPS study,”
2008 ALD Conference,
Jun. 29 – Jul.3, 2008,
Bruges, Belgium
44.
A. Hande, B.
Lee, H. C. Kim, R. M. Wallace,
J. Kim, M. Rousseau, J.
H. Yi, X. Liu, D. Shenai, H. Li, and J. Suydam, “atomic layer
deposition of nanolaminate structures for lanthanum Based oxide thin
films, 2008 ALD Conference, Jun. 29 – Jul.3, 2008, Bruges, Belgium
45.
B. Lee, A.
Hande, H. C. Kim, R. M. Wallace,
J. Kim, M. Rousseau, J.
H. Yi, X. Liu, D. Shenai, H. Li, and J. Suydam, “ATOMIC LAYER
DEPOSITION OF LANTHANUM OXIDE THIN FILMS USING WATER (H2O)
AND OZONE (O3) CHEMISTRY, “2008 ALD Conference, Jun. 29 –
Jul.3, 2008, Bruges, Belgium
46.
Jiyoung Kim,
D.
K. Cha, O. Lourie, M. J. Kim,
“Characterization of nanodevices by using in-situ TEM-STM (Invited
talk), 2008 M&M Meeting, Jun.
29 – Jul.3, 2008,
Albuquerque, NM
47.
D. C. Cha, K.
M. Lee, B. K. Lee, J. Wang, M. J. Kim, H. Shin, J. Lee,
J. Kim,”Fabrication and
characterization of single stand-alone TiO2 nanotube
device, 2008 TMS Meeting March 9 – March 13, 2008, New Orleanse, LO,
USA
48.
M.G. Lee, D. C.
Cha, M. J. Kim, J. Kim,
“Stand-alone TiO2 nanotube technology for sensor
applications,” 2008 US-Korea Conference Meeting, August 13 – August
16, 2008, San Diego, CA, USA
49.
D. C. Cha, S.
J. Ahn, S. Y. Park, M. J. Kim, H. Horii, S. O. Park, U. I, Jung and
J. Kim, “In-situ characterization of phase change memory devices by
using TEM-STM,” 2008 Non-Volatile Memory Technology
SymposiumNovember 11 – November 14, 2008,
50.
D. Cha, K. Lee,
B. Lee, J. Wang, M. Kim, H. Shin, J. Lee,
J. Kim, “Fabrication and
characterization of single stand-alone TiO2 nanotube
devices,” 2008 TMS Annual Meeting and Exhibition, New Orleans/LS,
Mar. 9-13 (2008)
51.
C. Hinkle, A.
Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F.
Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, “GaAs MOS frequency
dispersion reduction by surface oxide removal and passivation,”
IEEE-SISC (2007)
52.
F.
Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R.
Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J.
Woodall, P. Ye, “XPS interface study of nano-laminated Al2O3/HfO2
high-k on GaAs,” IEEE-SISC (2007)
53.
B. Coss, F.
Aguirre-Tostado, R. Wallace and
J. Kim, “Phase
transformation of sputtered TaxNy thin films
as a function of nitrogen and doping element concentrations,” 2007
Fall MRS, Boston, Nov. (2007)
54.
J. Kim, N.
Michael, C. Kim, Y. Park, R. Augur,
J. Kim, “Study of interface electromigration mechanism in Cu/barrier
interconnects,” The Sixth Pacific Rim International Conference on
Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007
55.
K. J. Choi, S.
J. McDonnell, R. M. Wallace,
J. Kim, “Step by step in-situ X-ray photoelectron spectroscopy
investigate ion ALD Al2O3 films using TMA and
water,” AVS meeting, Seattle/WA, Oct. (2007) Accepted
56.
Jiyoung Kim,
Dongkyu Cha, K.J. Choi, Moon J. Kim,“In-situ
TEM observation on nanostructure evolution during electrical
stressing,”
8th
IEEE
Nonvolatile Memory Technology Symposium,
57.
Amar Chowdhury,
S. Courtney, R. M. Wallace,
Jiyoung Kim, “Hydrogen diffusion through barrier layers,” 8th
IEEE Nonvolatile Memory Technology Symposium,
58.
B. Lee, K.
Choi, A. Hande, R. Wallace, Y. Senzaki, M. Rousseau, J. Suydam, J. Kim, “Characteristics of the ALD ZrO2 gate
capacitors,” 4th IEEE-IAGST, Sep. 25-28, Dallas/TX (2007)
59.
B. Coss, F.
Aguirre-Tostado, R. M. Wallace,
J. Kim, “Evaluation of TaN based NMOS metal gate solution as a
function of La contents,” 4th IEEE-IAGST, Sep. 25-28,
Dallas/TX (2007)
60.
Y. Tan, C.
Young, D. Heh, C. Park, P. Sivasubramani, J. Huang, D. Gilmer, K.
Choi, J. Kim, M. Kim, P. Majhi, R. Choi, P. Kirsch, B. Lee, H.
Tseng, R. Jammy, “Improved flash memory program and erase window
with TiO2 charge trap layer and high temperature dopant anneal,” 4th
IEEE-IAGST, Sep.25-28, Dallas/TX, (2007)
61.
Jiyoung Kim,
Dongkyu Cha, Moon J. Kim, “TiO2 nanotube test device
fabrication using focused ion beam,” US-Korea Conference 2007,
Washington D.C., Aug. 9-11 (2007)
62.
Jiyoung Kim,
Moon
J. Kim, “Nano-X: Nanofabrication, Nano-manipulation and
Nano-characterization,” Korea-Texas Nano Workshop, Richardson/TX,
Aug 6 – Aug. 8 (2007)
63.
H.C. Floresca,
J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H. H. Tseng,
B.H. Lee, R. Jammy, “Determination of strain in the Silicon channel
induced by a metal electrode,” Microscopy and Microanalysis 2007
Meeting, Fort Lauderdale, Florida, Aug. 5-9 (2007)
64.
T. H. Lee, D.
K. Cha, J. G. Wang, J. Jeon,
J. Kim, R. M. Wallace, B. E. Gnade, M. J. Kim, “HRTEM study on
the interface of Si based Resonant Tunneling Diodes (RTD) by UHV
wafer bonding technology,” Microscopy and Microanalysis 2007
Meeting, Fort Lauderdale, Florida, Aug. 5-9 (2007)
65.
D.K. Cha, J.
Jeon, J. Kim, M.J. Kim,
“Fabrication and characterization of single nanowire and nanotube
devices using focused ion beam fabrication,” Microscopy and
Microanalysis 2007 Meeting, Fort Lauderdale, Florida, Aug. 5-9
(2007)
66.
J. Kim,
B. Lee, K. Choi, R.M. Wallace, L. Tao, W. Hu, “Selective deposition
combining ALD (& MOCVD) with surface modification, 2007 ALD
conference, San Diego/CA, USA, Jun. 25-27 (2007)
67.
Dongkyu Cha, K.
Lee, B. Lee, Jinguo Wang, M. Kim, Hyungjung Shin, Jaegab Lee,
Jiyoung Kim, “Fabrication
of single TiO2 nanotube devices using by novel FIB
technique,” International Conference on Nanoscience and Technology
China 2007 (China NANO 2007), Beijing/China Jun. 4-6, (2007)
68.
P
Sivasubramani, T. Boscke, J. Huang, C. Young, P. Kirsch, S.
Krishnan, M. Quevedo-Lopez, S. Govindarajan, B. Ju, H. Harris, D.
Lichtenwalner, J. Jur, A. Kingon, J. Kim, B. Gnade, R. Wallace, G.
Bersukar, B. Lee, R. Jammy, “Dipole moment model explaning nFET Vt
tuning utilizing La, Sc, Er and Sr doped HfSiON dielectrics,” 2007
Symp. VLSI Technology,
69.
Bongki Lee,
Kyu-Jeong Choi, Kyung Min Lee, Moon J. Kim,
Jiyoung Kim, “Resistive
switching behavior of SrTiO3 single crystal nonvolatile
memory applications,” 2007 International Symposium on Integrated
Ferroelectrics (ISIF), Bordeaux/France, May 8-12 (2007)
70.
Kyu-Jeong Choi,
Bongki Lee, KyungMin Lee, Moon. J. Kim,
Jiyoung Kim,
“Characterization of copper doped silicon oxide films for
programmable metallization cell memory applications,” 2007
International Symposium on Integrated Ferroelectrics (ISIF),
Bordeaux/France, May 8-12 (2007)
71.
Robert M.
Wallace, C. Amar, J. Kim, Hydrogen diffusion through barrier layers
72.
W. Hu, L. Tao,
B. Lee, J. Kim, S. Pang,
"Induced patterning of organic and inorganic materials by spatially
discrete surface energy,” The fify-first international conference on
electron, ion and photon beam technology and nanotechnology (EIPBN),
Denver/Colorado, May. 29 – Jun. 1 (2007)
73.
Dongkyu Cha,
Jiyoung Kim, Bongki Lee, M.J. Kim, Sanghee Won, HyunJung Shin,
Jaegab Lee, MyungMo Sung, “Fabrication and characterization of
single TiO2 nanotube nanosensor,” 2006 MRS Fall Meeting,
Boston, USA, Nov. 26- Dec. 1 (2006)
74.
Dongkyu Cha,
Bongki Lee, R.M Wallace, B.E Gnade,
Jiyoung Kim, M.J. Kim,
“In-situ manipulation and characterization of single nanowire and
nanotube by using focused ion beam equipped with nanomanipulator,”
2006 MRS Fall Meeting, Boston, USA, Nov. 26- Dec. 1 (2006)
75.
Dongkyu Cha,
Bongki Lee, M.J. Kim, Jiyoung
Kim, “Stand-alone TiO2 nanotubes for nano-sensors
using atomic layer deposition and focused ion beam,” 2006 American
Vacuum Society Meeting, San Fransisco, CA., USA, Nov. 12-17 (2006)
76.
Jiyoung Kim,
Bongki Lee, SangHee Lee, HyunJung Shin, Jaegab Lee, “Selective
Atomic Layer Deposition of ZrO2 and Cu Using Soft
Lithography”, 2006 Joint Internation Meeting of the Electrochemical
Society, Cancun, Mexico, Oct. 29-Nov.3 (2006)
77.
Dongkyu Cha,
Bongki Lee, Moon J. Kim,
Jiyoung Kim, Sanghee Won, HyunJung Shin, Jaegab Lee, Myung Mo
Sung, “Fabrication and characteristics of TiO2 nanotubes
using atomic layer chemical vapor deposition,”, 2006 Joint
Internation Meeting of the Electrochemical Society, Cancun, Mexico,
Oct. 29-Nov.3 (2006)
78.
M. Kim, T. Lee,
J. Kim, R. Wallace, B. Gnade, “Si-Based Resonant Tunneling Devices
Using UHV wafer bonding,” 2006 Joint Internation Meeting of the
Electrochemical Society, Cancun, Mexico, Oct. 29-Nov.3 (2006)
79.
J. Jeon, H.
Floresca, J. Kim,
M.J.Kim, “In-situ nano fabrication and assembly by FIB/SEM with a
nanomanipulator,” The 16th International Microscopy
Congree,
80.
F. Mantiziba,
I. Gory, C. Nistorica, M. Ellis, R. Wallace,
J. Kim, M. Kim, B. Gnade,
“Approaches to reduce stiction, friction and wear in silicon
microelectromechanical system (MEMS),” TexMEMS VIII, Richardson, TX,
Oct. 9, 2006
81.
J. Jeon, H. C.
Floresca, J. Kim, B.
Gnade, M. Kim, “Combination of Nano Fabrication and Assembly by
FIB/SEM with a nanomanipulator,” TexMEMS VIII, Richardson, TX, Oct.
9, 2006
82.
Jiyoung Kim,
Moon Kim, “Metal Oxide Nanotube Fabricated by Atomic Layer
Deposition”, 5th US-Korea Workshop on Nanostructured
Materials & Manufacturing,
83.
D.K.Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace,
B.E.Gnade, M.J. Kim, “Electrical characterization of a single TiO2
nanotube by using modified FIB/SEM,” Microscopy and Microanalysis
2006, Chicago,, IL, July 30 – Aug. 3, 2006
84.
J. Kim,
D. Cha, B. Lee, M. J. Kim, S. Won, H. Shin, J. Lee, ”Electrical
Characteristics of TiO2 Nanotubes Fabricated by Atomic
Layer Deposition”, Atomic Layer Deposition 2006, Seoul, Korea, July
24-26, 2006
85.
J. Kim
and M. Kim, “Stand-Alone TiO2 Nanotube Devices”, Gordon
Conference – Nanostructure Fabrication 2006, Titton School, New
Hampshire, Jul. 16-19, 2006
86.
J. Kim
and Moon Kim, “Single TiO2 Nanotubes for Nano-Sensors”,
2006 NanoMaterials for Defense Applications,
87.
MRS 2005 Spring
88.
D. Jeong, S.
Won, H. Shin, J. Lee and J.
Kim, “ Nanotubes Alignment Using Magnetic Field and
Self-Assembled Monolayers”, International Conference on
Electroceramics, NM-10,
89.
D. Cha, R. M.
Wallace, B. E. Gnade, M.J. Kim, D. Jeong, and
J. Kim, “ In-situ
Electrical Characterization on Nanotubes Using Nanomanipulators”,
International Conference on Electroceramics, NM-30, Seoul, Korea,
Jun. 14, 2005
90.
T. Oh, B.
Gnade, M. J. Kim, R. M. Wallace,
J. Kim, “Thermal
Stability of Mo Based Metal Gate Stacks for Advanced CMOS
Applications”, International Conference on Electroceramics, P-I-14,
Seoul, Korea, Jun. 14, 2005
91.
J. Kim,
S. Won, D. Jeong, H. Shin, J. Lee, “ALD Metal Oxide Nanotube
Fabrication”, AVS 5th
International Conference on Atomic Layer Deposition 2005,
92.
P. Zhao,
J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ
Metal Gate Electrode with Tunable Work Function for Advanced CMOS,”
International Conference on Solid State Devices and Materials, Kobe,
Japan, September 15, 2005.
93.
P. Zhao, F.S.
Aguirre-Tostado, J. Kim,
M.J. Kim, B.E. Gnade, and R.M. Wallace, “Thermal Stability of
Amorphous LaAlO3 Thin Films on Si(100) Deposited by
Plasma Sputtering and Molecular Beam Deposition,” SRC Techcon 2005,
Portland, OR, October 25, 2005.
94.
P. Zhao,
J. Kim, M. J. Kim, B. E. Gnade, R. M. Wallace, “The Effects of
Nitrogen and Silicon Compositions on Work Function and Thermal
Stability of MoXSiYNZ/SiO2
Gate Stack,” SRC Techcon 2005, Portland, OR, October 24, 2005.
95.
P.
Sivasubramani, P. Zhao, F.S. Aguirre-Tostado,
J. Kim, M.J. Kim, B.E.
Gnade, and R.M. Wallace, “The Effect of Nitrogen Incorporation on
the Thermal Stability of La, Hf-aluminate Gate Stacks on Silicon,”
AVS 52nd International Symposium, October 31, 2005.
96.
J. Kim,
D. Jeong, S. Won, H. Shin, J. Lee, “Selective Atomic Layer
Deposition (ALD) for Fabrication of Metal and Oxide Nanotubes,” AVS
52nd International Symposium, Boston, MA, Nov. 2, 2005.
97.
D. K. Cha, J
Huang, T Zheng, J.B Jeon, T.H Lee,
Jiyoung Kim, R.M Wallace,
B.E Gnade and M.J Kim, “In-situ nano fabrication and electrical
characterization for TiO2 nanotubes using dual beam
focused ion beam and nanomanipulator,” MRS Fall Symposium, November
29, 2005.
98.
I. S. Jeon, J.
Lee, P. Zhao, P. Sivasubramani, T. Oh, H. Kim, M. J. Kim, B. E.
Gnade, J. Kim, R. M. Wallace,
“A Novel Methodology on Tuning Work Function of Metal Gate Using
Stacking Bi-Metal Layers”, 2004 IEEE International Electron Devices
Meeting (IEDM)
99.
D. Jeong, H. Shin, J. Lee, J.
Kim, “One Directional Alignment of the Metal/Oxide Hybrid
Nanotubes with Self-Assembled Monolayers”, 2004 Fall Symposium of
Materials Research Society
100.
C. Nistorica, J. Liu, I. Gory, G. Skidmore, F. Mantiziba, B. Gnade,
J. Kim, “Friction and Wear Properties of ALD Coated
Microelectromechanical System”, 2004 Fall Symposium of Materials
Research Society
101.
P. Sivasubramani, P. Zhao, I. S. Jeon, J. Lee,
J. Kim, M. J. Kim, B.E. Gnade, R. M. Wallace, “Characterisitics
of MoxSiy Gate Electrodes for Advanced CMOS
Applications”, 2004 American Vacuum Society (AVS) Meeting
102.
P. Zhao, P.
Sivasubramani, I. S. Jeon, J.
Kim, M. J. Kim, B.E. Gnade, R. M. Wallace, “ Physical and
Electrical Properties of MoxNy and MoxSiYNZ
as Gate Electrode Materials for MOS Devices”, 2004 American Vacuum
Society (AVS) Meeting
103.
Daekyun Jeong, Nohheon Park, Myungmo Sung, Jaegab Lee, Hyun Jung
Shin, Jiyoung Kim, “The Novel Fabrication Method for Fabrication of
Metal/Oxide Nano Tubes”, M5-29. 2004 Spring Symposium of Materials
Research Society,
104.
Daekyun Jeong, Nohheon Park, Hyunjung Shin, Jaegab Lee, Myungmo
Sung, Jiyoung Kim, “Metal And Oxide Stack Layer Formation Using a Novel
Selective Deposition for Flexible Display Applications”, I6-10,
Spring Symposium of Materials Research Society, San Fransisco, USA
(2004. 4. 12-16)
105.
Daekyun Jeong, Jinwoo Lee,
Jiyoung Kim, “ZrO2 and TiO2 Multilayer
Gate Dielectrics Using MOALD”, 7.14 P, The 16th
International Symposium on Integrated Ferroelectrics, Gyungju
Hyundai Hotel (
106.
D. Jeong, N.
Park, J. Kim, “Effects of
Oxydizers on the MO-ALD ZrO2 Thin Films”, 13.08 P, The 16th
International Symposium on Integrated Ferroelectrics, Gyungju
Hyundai Hotel, (Gyungju, Korea), (2004, 4. 5-8)
107.
J. Lee, T. Oh,
J. Kim, “PZT Capacitors
on Top of CrTiN/TiN Double Barrier Layers”, 10-06P, The 16th
International Symposium on Integrated Ferroelectrics, 13.08 P,
Gyungju Hyundai Hotel, (
108.
T. Oh, J. Lee, J. Kim,
“Effects of Bottom Electrode Conditions on Characteristics of BLT
Capacitors”, 11.35 P, The 16th International Symposium on
Integrated Ferroelectrics, 13.08 P, Gyungju Hyundai Hotel, (Gyungju,
Korea), (2004, 4. 5-8)
109.
D.K. Jeong,
110.
S.H. Jung, D.K. Jeong, J.Y. Kim and W.-G. Jung, "Fabrication
of CdS thin film pattern by CBD methode using the self-assembled
monolayer", The 3rd International Symposium on Designing, Processing
and Properties of Advanced Engineering Materials, P1-II-83 .
111.
Daekyun Jeong, Juwhan Park, Nohheon Park, Hyunjung Shin, JaeGab Lee,
Myung-Mo Sung and Jiyoung Kim, "A Novel Selective Deposition
Using Soft Lithography Self-Assembled Monolayers" 2003 Materials
Research Society Spring Meeting P9.14 , San Francisco Marriott &
Argent Hotels , USA (2003. 4. 21-25)
112.
Sungjin Hong, Seob Lee, Heejung Yang, Jiyoung Kim, Jaegab
Lee, Beomseok Cho, Changoh Jeong, Kyuha Chung, "Low Temperature
Growth of Cu Silicide At The Ag(Cu)/Si Interface Upon Annealing And
Its Effects On Adhesion, Resistivity, And Ohmic Contacts", 2003
Materials Research Society spring Meeting E3.15 , San Francisco
Marriott & Argent Hotels , USA (2003. 4. 21-25)
113.
Doosick Park, Jaebum Park, Heejung Yang, Hyunjung Shin, Jiyoung
Kim, Jaegab Lee, "Selective Cu Filling of Vias By Using ALD-Like
Cu And Self-Assembled Monolayers (SAMs)", 2003 Materials Research
Society spring Meeting E3.18 , San Francisco Marriott & Argent
Hotels , USA (2003. 4. 21-25)
114.
Heejung Yang, Seob Lee, YeonKyu Ko, Jiyoung Kim, Jaegab Lee,
Cheonman Shim, Donggeon Jung, "Enhanced Adhesion Property Of Cu On
Low-k By Using Ti Glue Layer, B Dopant And N2 Plasma
Treatment", 2003 Materials Research Society spring Meeting E3.27 ,
San Francisco Marriott & Argent Hotels , USA (2003. 4. 21-25)
115.
Seongho-Kong, Daekyun-Jeong and Jiyoung Kim, "Crystallization
Behaviors of Zirconium Based Oxide Films with Glass Forming
Additives", 15th International Symposium on Integrated
Ferroelectrics,
116.
Juwhan Park, Daekyun-Jeong, Nohheon-Park and Jiyoung Kim,
"Microstructure and Electrical Properties of ZrO2 Films
Deposited by MO-ALD", 2003 AVS Topical conference on Atomic Layer
Deposition, Santa Clara Convention Center pp. 42-43 (2003, 3, 3-6)
117.
Daekyun Jeong, Juwhan Park, Nohheon Park, Hyunjung Shin, JaeGab Lee,
Myung-Mo Sung*, Jiyoung Kim, "Fabrication of Cu/ZrO2/Si
Structure Capacitors by a Novel Selective Deposition Technique on
Patterned Self-Assembled Monolayers(SAMS)”, 2003 AVS Topical
conference on Atomic Layer Deposition, Santa Clara Convention
Center, pp 225-226 (2003, 3, 3-6)
118.
SeongHo Kong,
119.
Juwhan Park, Bongsik Choi, Nohhon Park and Jiyoung Kim, "ZrO2
Thin Films Deposited by MO-ALD Using Zr t-butoxide", 2002 AVS
Topical conference on Atomic Layer Deposition, Seoul, Korea (2002 ,
6)
120.
Juhwan Park, Bongsik Choi, Nohhon Park, Hyun Jung Shin, Jas Gab Lee,
and Jiyoung Kim, "Characteristics of ZrO2 Thin
Films by Atomic Layer Deposition for Alternative Gate Dielectric
Application", 14th International Symposium on Integrated
Ferroelectrics, Nara, Japan (2002. 5. 28- 6. 1)
121.
Chang-Bae Jeon, Seong-Ho Kong, Jinho Ahn, Jiyoung Kim,
"Characteristics of zirconium based amorphous thin films deposited
by co-sputtering“, 14th International Symposium on Integrated
Ferroelectrics, Nara Japan (2002. 5. 28- 6. 1)
122.
Chang-Bae Jeon, Seong-Ho Kong and Jiyoung Kim,
"Characteristics of zirconium based amorphous thin films for gate
dielectric applications" 2002 MRS spring meeting, San Francisco,
USA, p56 (2002, 4)
123.
Juwhan Park, Bongsik Choi, Nohhon Park and Jiyoung Kim, "ZrO2
gate dielectrics prepared by atomic layer deposition", 2002 MRS
spring meeting, San Francisco, USA, P52 , B4.13 (2002, 4)
124.
J.M. Koo, S.K. Hong, S.J. Yeom, J.S. Roh, and J. Kim, "High
Thermal Stability of Poly-Si Node CrTiN/TiN Double Barrier Layers
for High Density Ferroelectric Memory Application", IEDM 2001,
technical digest, p.279 ,Washington DC , USA (2001, 12)
125.
H. Min, C. Jun, W. Lee, J. Lee, J. Kim, "Effects of
Nitridation Treatments for SBT/Ta2O5 Stack
Gate Capacitors", 13th International Symposium on Integrated
Ferroelectrics, Abstracts Book p.68, ISIF 2001, Colorado Springs,
USA (2001, 3)
126.
H.C. Park, J. Kim, W. Lee, J. Lee, "Characteristics of Mixed
Composition Layered P(L)ZT Thin Films Derived by Chemical Solution
Deposition", 13th International Symposium on Integrated
Ferroelectrics, Abstracts Book p.127, ISIF 2001, Colorado Springs,
USA (2001, 3)
127.
J.M. Koo, J. Park, J. Kim, "Electrical Responses of
Integrated SrBi2Ta2O9-Based
Ferroelectric Memory Devices on Various Input Signal Pulses", 13th
International Symposium on Integrated Ferroelectrics, Abstracts Book
p.133, ISIF 2001, Colorado Springs, USA (2001, 3)
128.
Taeho Kim, Hyung-sub Min, June-Mo Koo, Jae-Gab Lee, Jaeheon Han and
Jiyoung Kim, "Nitridation of Si Surface Using ICP for
MeFIS-FET Applications", 3rd Asian Meeting on Ferroelectrics, AMF-3
Technical Program Book p.456, HongKong, (2000. 12. 15)
129.
June-Mo Koo, Taeho Kim Hyung-sub Min, Jin-Ho Ahn, Jae-Gab Lee and
Jiyoung Kim, "Influences of Hydrogen Damages in Feffoelectric
Thin Film Capacitors", 3rd Asian Meeting on Ferroelectrics, AMF-3
Technical Program Book p.457, HongKong, (2000. 12. 15)
130.
J. Kim,
T. Kim, H.-S. Min, J.-M. Koo, W. Lee, and J.-G. Lee, "MeFINS
Structure Capacitors for FET Type Ferroelectric Memory Applications"
198th Elcectrochemical Society Meeting (
131.
June-Mo Koo, TaeHo Kim, and Jiyoung Kim, "Hydrogen Induced
Degradation Phenomena of PZT Ferroelectric Capacitors", 12th IEEE
International Symposium on the Applications of Ferroelectrics
ISAF2000, ISAF 2000 Technical Program Book, p. 128, (Hawaii, USA)
(2000. 7. 31)
132.
Jiyoung Kim,
June-mo Koo, Tae-Ho Kim, Ilwan Bang, "Effect of Ti/Ir Hybrid Top
Electrodes of PZT Capacitor on Hydrogen Related Degradation",
12th International Symposium on Integrated Ferroelectrics, Abstract
Book p.388, ISIF 2000, (Aachen, Germany) (2000. 3)
133.
Tae-Ho Kim, Hyung-Seok Kim, Jiyoung Kim, "Investigation on
Various Insulator Layer for MFIS Capacitors", 12th
International Symposium on Integrated Ferroelectrics, Abstract Book
p.292, ISIF 2000, (Aachen, Germany) (2000, 3)
134.
Young-Geun Kim, Jiyoung Kim, "Thin Film Electric Resistance
Probe for Corrosion Rate Measurement”, 194th Elcectrochemical
Society Meeting, (Boston/MA,
135.
Sungwon Jung, Ilhwan bang, Jae Gab Lee, and Jiyoung Kim,
"Sol-gel PZT Ferroelectric Capacitor for Ir Family Electrodes", The
3rd international Meeting of Pacific Rim Ceramic Societies
(PacRim3), (
136.
Ilhwan bang, Jae Gab Lee, and Jiyoung Kim, "H2 Damage on
Ferroelectric Pb(Ti, Zr)O3 Thin Film Capacitor with Ir
Electrodes", The 3rd international Meeting of Pacific Rim Ceramic
Societies (PacRim3), (Kyongju, Korea) (1998. 9)
137.
Sungwon Jung, Ilhwan bang, Jae Gab Lee, and Jiyoung Kim,
"Characteristics of Sol-gel PZT Ferroelectric Capacitor for Ir
Electrodes.", The 4th International Conference on Electronic
Materials (IUMRS-ICEM-98) (Cheju, Korea) (1998. 8.)
138.
Sungwon Jung, Ilhwan bang, Jiyoung Kim, "Ir Electrodes for
Ferroelectric Capacitor Applications" The 1997 MRS Fall Meeting (
139.
Jiyoung Kim,
"The Electrical Characteristics of Sol-Gel Derived PLZT Thin Films",
The 9th International Meeting on Ferroelectricity (
140.
Sungwon Jung, Ilhwan bang, Jiyoung Kim, "The Asymmetric
Behaviors of PZT Thin Film Capacitors with Different Top Electrode
Metals", The 9th International Meeting on Ferroelectricity (Seoul,
Korea) p.89, (1997. 8)
141.
Jiyoung Kim,
C. Sudhama, R. Khamankar, B. Jiang, J. Lee, S. Summerfelt, B. Gnade,
"Investigation of Electrode Materials for Metal-Ferroelectric-Pt
Capacitors for DRAM Applications", 184th Electrochem. Soc. Meeting,
New Orleans/LU,
142.
V. Chikarmane, C. Sudhama, Jiyoung Kim, R. Khamankar and J.
Lee, "Sputtered PZT Thin Films with Low-Thermal Budget for I.C.
Applications", the 1992 Electronic Mater. Conf., (Boston/MA,
143.
Jiyoung Kim,
V. Chikarmane, C. Sudhama, R. Khamankar, J. Lee and A. Tasch, "The
Enhancement of Lifetime of Sputtered Lead Zirconate Titanate Thin
Films under A.C. Stressing", the 1992 Electronic Mater. Conf.,
(Boston/MA,
144.
Jiyoung Kim,
V.Chikarmane, C. Sudhama, J .Lee and A. Tasch, "The Dependence of
Electrical Device Properties on the Zr/Ti ratio in Reactively
Sputtered Ferroelectric Pb(ZrxTi1-x)O3
Thin Films for Memory Applications", the 1992 TMS Annual Meeting,
March 1992, (San Diego/CA, USA) (1992, 3)
145.
V. Chikarmane, Jiyoung Kim, C. Sudhama, J. Lee and A Tasch,
"Growth and Characterization of Reactively Sputtered Ferroelectric
Pb(ZrxTi1-x)O3 Thin Films for
Memory Applications", the 3rd. Annual
146.
V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee and A. Tasch,
"Electrical Characteristics and Structure-Property relationships in
DC-Magnetron sputtered PZT thin film capacitors annealed in oxygen
and nitrogen for ULSI DRAM Applications", the 10th. Annual Symposium
on Electronic Materials Processing and Characterization, June, 1991,
(Richardson/TX,
147.
C. Sudhama, V. Chikarmane, Jiyoung Kim, J. Lee and A. Tasch,
"Electrically Induced Improvement in the Properties of Thin
Ferroelectric films for NVRAM and DRAM Applications", the 10th.
Annual Symposium on Electronic Materials Processing and
Characterization, June, 1991, (Richardson/TX,
148.
V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee and A.
Tasch, "The Effects of Pb Compensation and Thermal Processing on the
Phase Content and Electrical Characteristics of DC-Magnetron
Sputtered Lead Zirconate Titanate Thin Film Capacitors", the SPIE
Technical Symposium (Dallas/TX, USA) (1991, 5)
149.
C. Sudhama, V. Chikarmane, Jiyoung Kim, J. Lee and A. Tasch,
"Measurement Techniques for the Characterization of Thin
Ferroelectric Films for Memory Applications", the SPIE Technical
Symposium (Dallas/TX,