PUBLICATIONS
1.
B. Choi, K.
Bae, Jiyoung Kim, “Next Generation Memory Devices,” ISBN
89-5884-077-3 93560, Korean Institute of Science and Technology
Information (206-9 CheongRyangRi-Dong, DongDaeMoon-Gu, Seoul, Korea)
/ I-Room ChulPanSa, p. 61, Jun. 30. 2004 (Written in Korean)
1.
A. Hande, B. Lee, H. Kim, R. M. Wallace, J. Kim, X. Liu, M.
Rousseau, J. Yi, H. Li, D. Shenai, and J. Suydam, “LaHfO
nano-laminates for high-k gate dielectric applications,” APL (In
preparation)
2.
B. Lee, G. Mordi, M.J. Kim, Y. J. Chabal, E.M. Vogel, R. M. Wallace,
KJ Cho, J. Kim, L. Colombo, “Graphene devices with high-k dielectric
using ozone based atomic layer deposition,” APL (In preparation)
3.
H-C Kim, M. Milojevic, B. Lee, R. M. Wallace, J. Kim, X. Lie, M.
Rousseau, H. Li, D. Shenai, “Growth behaviors of
atomic-layer-deposited La-based oxide on silicon through in-situ
half-cycle study of x-ray photoelectron spectroscopy,” Chem. Mater.
(In preparation)
4.
B.E. Coss, W. Y. Loh, R. M. Wallace, J. Kim, B. Sassman, P. Majhi,
R. Jammy, “Near Band Edge Schottky Barrier Height Modulation Using
High-κ Dielectric Dipole Tuning Mechanism,” Appl. Phys. Lett. (In
Preparation)
5.
J. Kim, S. Won, D. Jung, H. Yang, H. Shin, J. Lee, M. Sung,
“Consecutive Selective Deposition Using Atomic Layer Deposition and
Self Assembled Monolayers,” Applied Physics Letter (In Preparation)
6.
K.J. Choi, B. Lee, S. J. McDonnell, R.M. Wallace, J. Kim,
“Step by step in-situ X-ray photoelectron spectroscopy investigation
on ALD Al2O3 films using TMA and water on Si
substrate,” Appl. Phys. Lett (In Preparation)
7.
D. Cha, B. Lee, M. J. Kim, J. Kim, “Fabrication and
characteristic of stand-alone single TiO2 nanotube
devices,” Nano Lett. (In Prep.)
8.
J. Kim, H. Kim,
T. Oh, H. Shin, J. Lee, M. Kim, B. Gnade, R. Wallace, “Tunability of
Mo silicide metal gate for advanced CMOS applications”,
Electrochemical Society Letters, (In prep.)
9.
D.K. Cha, B.
Lee, Jinguo Wang, M. J. Kim, Hyunjung Shin, M.M. Sung and
Jiyoung Kim, “Fabrication
of single TiO2 nanotube devices using by novel focused
ion beam technology”, Jour. Nano Science and Technology, (submitted)
10.
D. Cha, S. Y.
Park, S. J. Ahn, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I.
Jung, M. J. Kim, J. Kim, “In-situ observation and characterization
of structural evolution in a phase-change memory device by TEM-STM,”
Jour. Microsc. Microanal. 15(Suppl 2) pp. 716-717 (2009)
11.
D. Cha, M. Lee,
H. Shin, M. J. Kim, J. Kim, “Functionalization of Single TiO2
Nanotube for Bio-Sensor Applications,” Jour. Microsc. Microanal.
15(Suppl 2) pp. 1180-1181 (2009)
12.
G. Lee, B. Lee,
J. Kim, K. Cho, “Ozone Adsorption on Graphene: Ab Initio Study and
Experimantal Validation,” Jour. Phys. Chem. C, 113, pp. 14225-14229
(2009)
13.
R. M. Wallace,
P. C. McIntyre, J. Kim, Y. Nishi, “Atomic layer deposition of
dielectrics on Ge and III-V materials for ultrahigh performance
transistors,” 34(7), pp. 493-503 (2009)
(Invited review article)
14.
J. Kim, T. W.
Kim, “Initial surface reactions of atomic layer deposition,” JOM,
61(6), pp.19-24 (2009) (Invited review
article)
15.
C. Bae, H. C.
Kim, D. Han, H. Yoo, J. Kim and H. Shin, “Nanoscale ampoule
fabrication by capillary autoclosing,” Small, (ASAP On-line)
16.
C. Bae, Y.
Yoon, H. Yoo, D. Han, J. Cho, B. H. Lee, M. M. Sung, M. G. Lee, J.
Kim, H. Shin, “Controlled fabrication of multiwall anatase TiO2
nanotubular architectures,” Chem. Mater., 21, pp. 2574-2576 (2009)
17.
B. Lee, T. J. Park, A. Hande, K. J. Chung, M. J. Kim, R.
M. Wallace, J. Kim,
X.
Liu, J. Yi, H. Li, M. Rousseau, D. Shenai, and J. Suydam,
“Electrical properties of atomic layer deposited La2O3
films using a novel La formamidinate precursor and ozone,”
Microelectron.
18.
B. Brennan, M.
Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, R. M.
Wallace, “Half-cycle Atomic Layer Deposition reaction study using O3
and H2O oxidation of Al2O3 on the
(NH4)2S passivated In0.53Ga0.47As
surface,” Electrochem. Solid. Lett., 12, H205-H208 (2009)
19.
B. Lee, K.
Choi, A. Hande, R. Wallace, Y. Senzaki, M. Rousseau, J. Suydam,
J. Kim, “Characteristics of the ALD ZrO2 gate
capacitors,” Microelectron.
20.
B. Coss, F.
Aguirre-Tostado, R. M. Wallace,
J. Kim, “Evaluation of TaN based NMOS metal gate solution as a
function of La contents,” Microelectron.
21.
M.
Milojevic , F. Aguirre-Tostado , C. L. Hinkle, H. C. Kim , E. M.
Vogel,
J. Kim, and R. M.
Wallace, “Half-cycle atomic layer deposition reaction studies
of Al2O3 on In0.2Ga0.8As
(100) surfaces,” Appl. Phys. Lett.,
93, 202902 (2008).
22.
M. Milojevic ,
C. L. Hinkle, F. Aguirre-Tostado , H.C. Kim , E. M. Vogel,
J. Kim, and R. M.
Wallace, “Half-cycle
atomic layer deposition reaction studies of Al2O3
on (NH4)2S passivated GaAs(100) surfaces,”
Appl. Phys. Lett., 93, 202902(2008).
23.
J.
Kim, D. K. Cha, S. Y. Park, M. J. Kim “Characterization of
nanodevices by using in-situ TEM-STM,”
Microscopy and Microanalysis.,
14 (Suppl 2), 20-1 (2008)
24.
C. Y.
Kang, J. W. Yang, J. Oh, R. Choi, Y.J. Suh, H. C. Floresca,
J. Kim, M. J. Kim, B. H.
Lee, H. H. Tseng, R. Jammy, “Effects of film stress modulation using
TiN metal gate on stress engineering and its impact on device
characteristics in metal gate/high-k dielectric SOI FinFETs,”
IEEE Electronic Device
Letters, 29, 487
(2008)
25.
F.S.
Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle,
E.M. Vogel,
J. Kim, T. Yang, Y. Xuan,
P.D. Ye, and R.M. Wallace, “S-passivation of Gas and band bending
reduction upon atomic layer deposition of HfO2/Al2O3
nanolaminates,” Appl. Phys. Lett., 93, 061907 (2008)
26.
C. L.
Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C.
Kim,
J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and
p-type GaAs oxide growth and its effects on frequency dispersion
characteristics ,” Appl. Phys. Lett.
93, 113506 (2008)
27.
F. S.
Aguirre-Tostado, M. Milojevic, B. Lee, J. Kim, R. M. Wallace,
“In-situ study of surface reactions of atomic layer deposited LaXAl2-XO3
films on atomically clean In0.2Ga0.8As,” Appl.
Phys. Lett., 93, 172907 (2008)
28.
J. G. Wang, J.
Kim, C. Y. Kang, B. H. Lee, R. Jammy, R. Choi, M. J. Kim, “Origin of
tensile stress in the Si substrate induced by TiN/HfO2
metal gate/high-k dielectric gate stack,” Appl. Phys. Lett., 93,
161913 (2008)
29.
B. Lee,
H. Kim, E. M. Vogel, R. M. Wallace,
J. Kim, “Conformal Al2O3 dielectric layer
deposited by atomic layer deposition for graphene-based
nanoelectronics,” Appl. Phys. Lett., 92, 203102 (2008)
This paper is also linked “Virtual Journal of Nanoscale Science and
Technology” by American Institute of Physics
30.
C. Y.
Kang, J. W. Yang, J. Oh, R. Choi, Y. J. Suh, H. C. Floresca,
J. Kim, M. Kim, B. H.
Lee, H. H. Tseng, R. Jammy, “Effects of film stress modulation using
TiN metal gate on stress engineering and its impact on device
characteristics in metal gate / high-k dielectric SOI FinFETs,” IEEE
Elect. Dev. Lett., 29(5), pp.487-489 (2008)
31.
C. Bae,
S. Kim, B. Ahn, J. Kim,
M. M. Sung, H. Shin, “Template directed gas-phase fabrication of
oxide nanotubes,” J. Mater. Chem., 18, pp.1362-1367 (2008)
32. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, R. M. Wallace, “GaAs interfacial self-cleaning by atomic layer deposition,” Appl. Phys. Lett., 92, 071901 (2008)
33. C. Bae, H. Yoo, S. Kim, K. Lee, J. Kim, M. Sung, H. Shin, “Template directed oxide nanotubes: Synthesis, characterization, and applications,” Chem. Mater., 20, pp. 756-767 (2008) (Review Article)
34. C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, J. Choi, J. Kim, R. Wallace, “Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation,” Appl. Phys. Lett., 91, 163512 (2007)
35.
C. Bae, J. Moon, H. Shin, J. Kim, M. M. Sung, “Fabrication of
monodisperse asymmetric colloidal clusters by using contact area
lithography (
36.
J. Yun, S. Kim, S. Seo, M. Lee, D. Kim, S. Ahn, Y. Park,
J. Kim, H. Shin, “Random and localized resistive switching
observation in ultra-thin (5nm) Pt/NiO/Pt,” Physica Status Solidus-
Rapid Research Letters (RRL), 1 (6), pp. 280-282 (2007)
9
37.
L. Tao, A. Crouch, F. Yoon, B.K. Lee, J. S. Guthi, J. Y. Kim,
J. Gao and W. Hu, “Surface energy induced patterning of organic and
inorganic materials on heterogeneous Si surfaces,” Jour. Vac. Sci.
Tech. B., 25, pp. 1993-1997 (2007)
38.
C. Bae, J. Moon, H. Shin, M. Sung, J. Kim,
“Fabrication of monodisperse asymmetric colloidal clusters by using
contact area lithography (
39.
D.K. Cha, B. Lee, J. Jeon, J. Kim, M.J. Kim, “Fabrication and
Characterization of Single Nanowire and Nanotube Devices,”
Microscopy and Microanalysis,
13
(S02),
pp 720-721 (August, 2007)
40.
T.H. Lee, D. K. Cha, J. G. Wang, J. Jeon, J. Kim, R. M.
Wallace, B. E. Gnade, M. J. Kim, “HRTEM study on the interface of Si
based resonant tunneling diodes (RTD) by UHV wafer bonding
technology,”
Microscopy and Microanalysis,
13
(S02),
pp 804-805 (August, 2007)
41.
H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi,
S.C. Song, H. H. Tseng, B.H. Lee, R. Jammy, “Determination of strain
in the Silicon channel induced by a metal electrode,”
Microscopy and Microanalysis,
13
(S02),
pp 838-839 (August, 2007)
42.
Chang Yong Kang, Rino Choi, M.M. Hussain, Jinguo Wang, Young
Jun Suh, H.C. Foresca, Moon J. Kim, Jiyoung Kim, Byoung Hun
Lee, Raj Jammy, “Effects of metal gate-induced strain on the
performance of metal oxide – semiconductor field effect transistors
with titanium nitride gate electrode and hafnium oxide dielectric,”
Appl. Phys. Lett., 91, 033511(2007)
43.
K. Seo, K. Varadwaj, D. Cha, J. In, J. Kim, J. Park, B. Kim,
“Synthesis and electrical properties of single crystalline CrSi2
nanowires,” J. Phys. Chem. C, 111, 9072-9076 (2007)
44.
P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, R. M.
Wallace, “Effect of composition on the thermal stability of sputter
deposited hafnium aluminate and nitrided hafnium aluminate
dielectric on Si (100),” Jour. Appl. Phys., 101, 114108 (2007)
45.
P. Sivasubramani, T.H.Lee, M.J.Kim, J.Kim, B.E.Gnade,
R.M.Wallace, L.F.Edge, D.G. Schlom, F.A.Sevie, R.Garcia, Z.Zhu,
D.P.Griffis, “Thermal stability of lanthanum scandate dielectrics on
Si (100),” Appl. Phys. Lett., 89, 242907 (2006)
46.
P. Sivasubramani, J. Kim, M. J. Kim, B.E. Gnade, R. M.
Wallace, ”Effect of nitrogen incorporation on the thermal stability
of sputter deposited lanthanum aluminate dielectrics on Si (100),”
Appl. Phys. Lett., 89, 152903 (2006)
47.
D.K.Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace,
B.E.Gnade, M.J. Kim, “Electrical characterization of a single TiO2
nanotube by using modified FIB/SEM,” Microsc. Microanal., 12 (Supp
2), pp.1272-1273 (2006)
48.
H. Shin, C. Kim, B. Lee, J.
Kim, H. Park, D. Min, J. Jung, S. Hong, “Formation and Process
Optimization of Scanning Resistive Probe,” Journal of Vacuum Science
and Technology B, B24 (5), pp. 2417-2420 (2006) –
This paper is also linked “Virtual Journal
of Nanoscale Science and Technology, Vol. 14 (15), Oct. 9, 2006 by
American Institute of Physics
49.
M.H.Shin, M. S. Park, N. E. Lee, J. Kim, C. Y. Kim, J.
Ahn, ”Dry etching of TaN/HfO2 gate-stack structure in BCl3/Ar/O2
inductively coupled plasmas”, Journal of Vacuum Science and
Technology, A24 (4), pp. 1373-1379 (2006)
50.
J. Lee, H. J. Yang, J. H. Lee, J. Kim, W. J. Nam, H. J. Shin,
Y. K. Ko, J. G. Lee, E. G. Lee, C. S. Kim, ”Highly conformal
deposition of pure Co films by MOCVD using Co2(CO)8
as a precursor”, Journal of the Electrochemcial Society, 153(6),
G539-G542 (2006)
51.
S. Kim, T. W. Kwon,
J.Y. Kim, H. Shin, M. M. Sung, and J. G. Lee, “Selective Vapor
Deposition of Poly(3,4-ethylenedioxythiophene) Thin Film on an
n-Octadecyltrichlorosilane Monolayer Oxidized by Ultraviolet
Photolithography,” J. Korean Phys. Soc.,
49, pp. S736 – S740
(2006)
52.
Y. G. Kim, S. Y. Li, S. Jung, S. M. Lee,
J. Kim, Y. T. Kho,
“Corrosion behaviors of sputter-deposited steel thin film for
electrical resistance sensor material,” Surf. & Coatings Tech.,
201, 1731-1738 (2006)
53.
Y. K. Ko, S. Lee, H. M. Lee, H. J. Yang, J. Kim, J. H. Lee,
H. J. Shin, W. J. Nam and J. G. Lee, "Enhanced Adhesion of Cu Film
on a Low-k Material", Journal of Korean Physics Society, 47, pp.
S467-S470 (2005)
54.
H. Yang, T. Kwon, J. Lee, J. Kim, H. Shin, M. Sung, J.
Lee, “Selective deposition of Co thin films for TFT gate electrode
by non-optic method; micro-contacting and MOCVD”, Journal of Korean
Physics Society 47, pp. S397-S400 (2005)
55.
C. Nistorica, J. Liu, I. Gory, G. Skidmore, F. Mantiziba, B. Gnade,
J. Kim, “Tribological and wear studies of coatings fabricated
by atomic layer deposition and by successive ionic layer adsorption
an reaction for microelectromechanical devices,” Journal of Vacuum
Science and Technology A, 23, pp. 836 – 840 (2005)
56.
M. Shin, S. Na, N. Lee, T. Oh, J. Kim, T. Lee, J. Ahn, “Dry
Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar
Inductively Coupled Plasma,” Japanese Journal of Applied Physics, 44
(7B), pp. 5811 – 5818 (2005)
57.
J. Lee, T. Oh, J. Kim, “PZT Capacitors on Top of
CrTiN/TiN Double Barrier Layers”, Integrated Ferroelectrics, 64(5),
pp.289-295 (2004)
58. H. Shin, D. Jung, J. Lee, M. Sung and J. Kim, “Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultra-Precise Wall Thickness Control,” Advanced Materials, 16(14), pp. 1197-1200 (2004) (the cover article)
59.
D. Jeong, J. Lee, J. Kim, “Effects of Various Oxidizers on
the ZrO2 Thin Films Deposited by Atomic Layer
Deposition”, Integrated Ferroelectrics, 67, pp. 41-48 (2004)
60.
S.-H. Jung, D.-K. Jeong, J. Y. Kim, W.-G. Jung,
“Fabrication of CdS Thin Film Pattern by CBD Method Using the
Self-Assembled Monolayer”, Materials Science Forum, Vol. 449-452,
pp. 449-452 (2004)
61.
D. K. Jeong, N. H. Park, S. H. Jung, W.-G. Jung, H. Shin, J.
G. Lee,
J. Y. Kim, “Fabrication of Oxide/Semiconducting Coaxial
Nanotubular Materials Using Atomic Layer Deposition”, Materials
Science Forum, Vol. 449-452, pp. 1169-1172 (2004)
62.
H. Yang, H.
Lee, J. Lee, J. Lee, B. Cho,
J. Kim, C. Jeong, K. Chung, C. Lee, H. Hong, “Mechanism for
silicide formation in Ag(Cu)/Si and Ag(Co)/Si upon Annealing”,
Journal of Korean Physical Society, 45 (5), pp. 1263-1267 (2004)
63.
D.
Jeong, H. Shin, J. Lee, J.
Kim, “Synthesis
of Metal Oxide Nanotubular Structure Using Atomic Layer Deposition
on Nanotemplates”, Journal of Korean Physical Society, 45 (5), pp.
1249-1252 (2004)
64.
Y.K. Ko, S. Lee, H.J. Yang, J.Y. Kim, H.J. Shin, J.H.
Lee and J.G. Lee , E.G. Lee, C.M. Lee "Resistivity Variation with
the Grain Growth and the Boron Content in Cu(B) Films", Jour. Korean
Physics Society. Vol. 44, No.1. pp. 6-9 (2004)
65.
Jiyoung Kim,
Seong-Ho Kong and Jinho Ahn, "Effects of Glass Forming Elements (Si,
Al and Bi) on Characteristics of Zr Based Oxide Films", Jour. Korean
Physics Society Vol.43, No.5, pp854-857 (2003)
66.
Seong-Ho Kong, Daekyun Jeong, Jinho Ahn and Jiyoung Kim,
"Crystallization Behaviors of Zirconium Based Oxide Films with Glass
Forming Additives for Gate Dielectric Applications", Integrated
Ferroelectrics Vol. 57, pp.1193-1200 (2003)
67.
Chang-Bae Jeon, Seong-Ho Kong, and Jiyoung Kim,
"Characteristics of zirconium silicate films prepared by using
different co-sputtering methods", Jour. Korean Physics Society, Vol.
42, No.2, pp.267-271
(2003)
68. Y.K. Ko, D.S. Park, B.S. Seo, H.J. Yang, H.J. Shin, J.Y. Kim, J.H. Lee, W.H. Lee, P.J. Reucroft, J.G. Lee, "Studies of cobalt thin films deposited by sputtering and MOCVD", Materials Chemistry and Physics, Vol. 80, pp. 560-564 (2003)
69.
Chang-Bae Jeon, Seong-Ho Kong, Hyunjung Shin, Jinho Ahn, Jiyoung
Kim , "Characteristics of zirconium based amorphous thin films
deposited by co-sputtering", Integrated Ferroelectrics, Vol. 48, pp.
33-40 (2002)
70.
71.
S.J. Hong, H.J. Yang, J.Y. Kim, H.J.Shin, J.H. Lee,
Y.K. Ko, and J.G. Lee, “Effects of Co Precipitation on Si Diffusion
in Ag(Co)/Si During Postannealing", Jour. Korean Physics
Society, Vol.41, No.4, pp. 417-421 (2002)
72.
June-Mo Koo, Jiyoung Kim, Eun-Gu Lee, "Effects of
Recovery Annealing on Reliability of SrBi2Ta2O9 Based Ferroelectric
Memory Devices,” Journal of Materials Science Letter, Vol. 21 (8),
pp. 653-655 (2002)
73.
June-Mo Koo,
74.
Hyungsub Min, Taeho Kim, Changbae Jeon, Jin-Ho Ahn, Jiyoung Kim,
“Characteristics of Pt/PZT/TiO2/Nitride/Si Structure
Capacitors with ICP Nitride Treatments", Jour. Korean Physics
Society, Vol.40, No. 1, pp. 172-175 (2002)
75.
W. H. Lee, B. S. Cho, B. J. Kang, C. O. Jeong, Y. G. Kim,
J.Y. Kim and J.G. Lee, "Enhanced Properties of Ag Alloy Films
for Advanced TFT-LCD's", Jour. Korean Physics Society, Vol.40, No.
1, pp. 110-114 (2002)
76.
W.H. Lee, H.J. Yang, C.M. Lee, Y.G. Kim, J.Y. Kim and
J.G. Lee, "Taper Etching of Copper Using an Inductively Coupled O2
Plasma and Hexafluoroacetylacetone", Jour. Korean Physics Society,
Vol.40, No. 1, pp. 152-155 (2002)
77.
W.H. Lee, B.S. Seo, I.J. Byun, Y.G, Ko, E.G. Lee, J.Y. Kim
and J.G. Lee "Carrier Gas Effects on Copper Films Deposited from
(hfac)Cu(DMB)(3,3-dimethyl-1-butene) by Using
MOCVD", Jour. Korean Physics Society,
Vol.40, No. 1, pp. 107-109 (2002)
78.
H. Min, C. Jun, W. Lee, J. Lee, J. Ahn, J. Kim,
"Effects of Nitridation Treatments for SBT/Ta2O5
Stack Gate Capacitors", Integrated Ferroelectrics, Vol. 40, pp.
211-218 (2001)
79.
Taeho Kim, Hyung-sub Min, June-Mo Koo, Jae-Gab Lee, Jaeheon
Han and
Jiyoung Kim, "Nitridation of Si Surface Using ICP For
MeFIS-FET Applications", Ferroelectrics, Vol. 260, pp.273~278 (2001)
80.
June-Mo Koo, Taeho Kim Hyung-seob Min, Jin-Ho Ahn, Jae-Gab
Lee and
Jiyoung Kim, "Influences of Hydrogen Damages in Ferroelectric
Thin Film Capacitors", Ferroelectrics, Vol 260, pp.279~284 (2001)
81.
Wonhee Lee, Heunglyul Cho, Beomseok Cho, Jiyoung Kim,
Young-Seok Kim, Woo-Gwang Jeong, Hoon Kwon, Jinhyung Lee, P.J.
Reucroft, Chongmu Lee, and Jaegab Lee, “Thermal stability
enhancement of Cu interconnects employing a self-aligned MgO Layer
obtained from a Cu(Mg) alloy film", Japanese Journal of Applied
Physics, Vol. 40, Part I, NO.4A, pp.2408-2412 (2001)
82.
June-Mo Koo, Ilhwan Bang, TaeHo Kim, Jae-Gab Lee, and
Jiyoung Kim, "Effects of Hybrid structure Top Electrodes of PZT
Capacitors on Hydrogen Induced damages", J. Kor. Phys. Soc., Vol.
38, No.3, pp.273-276 (2001)
83. Wonhee Lee, Heunglyul Cho, Beomseok Cho, Jiyoung Kim, Youg-Seok Kim, Woo-Gwang Jeong, Hoon Kwon, Jinhyung Lee, P.J. Reucroft, Chongmu Lee, and Jaegab Lee, "Effect of Mg content in Cu(Mg)/SiO2/Si multilayers on the resistivity after annealing in an oxygen ambient", Journal of Vacuum Science and Technology A, Vol. 18(6) Nov/Dec, pp.2972-2977 (2000)
84.
Jiyoung Kim,
June-Mo Koo, TaeHo Kim and Ilhwan Bang, "Effects of Ti/Ir Top
electrodes of PZT Capacitors on the Hydrogen Related Degradation"
Integrated Ferroelectrics, vol.31, pp.367-376 (2000)
85.
TaeHo Kim, Hyung-Seok Kim, June-Mo Koo, HyungSub Min and
Jiyoung Kim, "Investigation on Various Insulator Layers for MFIS
Capacitors", Integrated Ferroelectrics, vol.30, pp.121-128, (2000)
86.
Eun-Gu Lee, Jong-Kook Lee, Woo-Yang Jang, Jae-Gab Lee,
Jiyoung Kim, "Domain switching characteristics of preferentially
oriented lead zirconate titanate thin films", Journal of Materials
Science Letters Vol. 19(21) Nov., pp.1917-1919 (2000)
87. Wonhee Lee, Heunglyul Cho, Beomseok Cho, Jiyoung Kim, Yong-Seok Kim, Woo-Gwang Jeong, Hoon Kwon, Jinhyung Lee, P.J. Reucroft, Chongmu Lee, and Jaegab Lee, "Factors Affecting Passivation of Cu(Mg) Alloy Films", Journal of the Electrochemical Society, Vol. 147 (8), pp.3066-3069 (2000)
88. W. H. Lee, H. L. Cho, B. S. Cho, J. Y. Kim, W. J. Nam, Y-S. Kim, W. G. Jung, H. Kwon, J. H. Lee, J. G. Lee, P. J. Reucroft, C. M. Lee and E. G. Lee, "Diffusion barrier and electrical characteristics for a self-aligned MgO layer obtained from a Cu(Mg) alloy film", Applied Physics Letters, Vol. 77 (14), pp.2192-2194 (2000)
89.
E. G. Lee, J. K. Lee, J. G. Lee, J. Y. Kim, H. M. Jang,
"Zr/Ti ratio dependence of the deformation in the hysteresis loop of
Pb(Zr,Ti)O3 thin films", Jour. of Materials Science
Letters, Vol. 18, pp.2025-2027 (1999)
90. Jaeheon Han, Jiyoung Kim, Tae-song Kim, Jeong-seog Kim, "Performance of Fabry-Perot microcavity structures with corrugated diaphragms", Sensors and Actuators, Vol, 79, pp. 162-172, (1999)
91.
E. G. Lee, J. K. Lee, J. G. Lee, J. Y. Kim, H. M.
Jang, "Deformation in the hysteresis loop of Pt/Pb(Zr,Ti)O3/Pt
thin film capacitor", Jour. of Materials Science Letters, Vol. 18,
pp.1033-1035 (1999)
92.
Hyung-Seok
Kim, Ilhwan Bang, Jiyoung Kim, "Electrical Properties of MFIS
Capacitors with PZT/TiO2 Layers", J. Kor. Phys. Soc.,
Vol.35, pp.S123-S126 (1999)
93.
Seung Yoon Lee, Ki-Chang Song, Jiyoung Kim, Joo-Huik Sohn,
Jinho Ahn, "High Transmittance SiC Membrane Prepared by ECR-CVD in
Combination with RTA",
Jpn. Jour. Appl. Phys., Part1, Vol.37 Part1 (12B), pp.6841-6844
(1998)
94.
Jiyoung Kim,
Ilhwan Bang, "The Electrical Characteristics of Sol-Gel Derived PLZT
Thin Films", J. Kor. Phys. Soc., vol. 32, pp.S1556-S1558 (1998)
95. J. Lee, J. Kim, H. Shin, “MOCVD of TiN and/or Ti from new precursors,” Thin Solid Films, 320 (1), pp. 15-19 (1998)
96.
Sungwon Jung, Jae Gab Lee, Jiyoung Kim, "The
Asymmetric Behaviors of PZT Thin Film Capacitors with Different Top
Electrode Metals", J. Kor. Phys. Soc., Vol. 32, pp.S1710-S1713
(1998)
97.
Jae-Gab. Lee, Jiyoung Kim, Jeong-Yong Lee, Jae-Sung Roh,
Jeung-Soo Huh, "P and As Implantation Enhanced Formation of
Metal-Free Oxide on WSi2", Jpn. J. Appl. Phys. Part1,
Vol.36 (12A), pp. 7140-7145 (1997)
98.
Jiyoung Kim,
"X-ray and Plasma Process Induced Damages to PLZT Capacitor
Characteristics for DRAM Applications", Kor. J. Ceram., Vol. 3 (3),
pp.213-217 (1997)
99.
Jack Lee, Bo.
Jiang, C. Sudhama, R. Khamankar, Jiyoung Kim, "Nonlinearity
of Ferroelectric Capacitors on DRAM R/W Operations", Integrated
Ferroelectrics, Vol. 7, pp.319-328 (1995)
100. R.
Khamankar, Jiyoung Kim, C. Sudhama, Bo Jiang, Jack Lee,
"Effects of Electrical Stress Parameters on Polarization Loss in
Ferroelectric PZT Thin Film Capacitors", IEEE Electron. Dev. Lett.,
Vol. 16(4), pp.130-132 (1995)
101.
R. Khamankar, Jiyoung Kim, C. Sudhama, Jack Lee, "The Effect
of Deposition Temperature on the Material and Electrical Properties
of PZT Thin Films for ULSI DRAM Applications", Integrated
Ferroelectrics, Vol. 5, pp.169-176 (1994)
102.
Bo Jiang, C. Sudhama, R. Khamankar, Jiyoung Kim, J.
Lee, "Effects of Nonlinear Storage Capacitor on DRAM READ/WRITE
Operations", IEEE Electron. Dev. Lett., Vol. 15(4), pp.126-128
(1994)
103.
C. Sudhama, Jiyoung Kim, V. Chikarmane, R. Khamankar,
J. Lee, A. Tasch, "Optimization of Pb Compensation with
Thickness-Scaling of Thin Sputtered PZT Films in the Range for
Memory Applications", J. Electronic Mater., Vol.23 (12),
pp.1261-1268 (1994)
104. C. Sudhama, V. Chikarmane, Jiyoung Kim, J. Lee, "The Effect of Lanthanum Doping on the Electrical Properties of Sol-Gel derived Ferroelectric Lead Zirconate Titanate(PZT) for ULSI DRAM Applications", J. of Vac. Sci. Tech., B11(4) pp.1302 - 1308 (1993)
105.
Jack Lee, V. Chikarmane, C. Sudhama, Jiyoung Kim,
"Sputtered PZT and PLZT Thin Film Capacitors for ULSI Memory
Applications", Intergrated Ferroelectrics, Vol. 3, pp.113-120 (1993)
106. V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee, "Comparison of the Electrical Characteristics and Phase Transformation Kinetics of DC-Magnetron Sputtered PZT Thin Film Capacitors annealed in O2 and N2 ambients for ULSI DRAM Applications", J. of Vac. Sci. Tech., A10 (4), pp.1562-1568 (1992)
107. V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee, "Annealing of Lead Zirconate Titanate (65/35)Thin Films for Storage Dielectric Applications: Phase Transformation and Electrical Characteristics", J. Electronic Mater., Vol.21 (5), pp.503-512 (1992)
108.
V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee., A.
Tasch, "A Comparative Study of the Perovskite Phase Microstructure
Evolution and Electrical Properties of Lead Zirconate Titanate Thin
Film Capacitors annealed in Oxygen and Nitrogen Ambients", Appl.
Phys. Lett., Vol.59 (22), pp.2850-2852 (1991)
Peer Reviewed International Conference Proceeding Papers (English)
1.
D. Cha, S. J.
Park, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I. Jung, M. J.
Kim, J. Kim, “A Direct observation on the structural evolution of
memory-switching phenomena using in-situ TEM,” Tech. Digest. 2009
Symp. VLSI Technology, pp.204-205
(2009)
2.
B. Coss, W. Y.
Loh, J. Oh, G. Smith, C. Smith, H. Adhikari, B. Sassman, S.
Parthasrathy, J. Barnett, P. Majhi, R. M. Wallace, J. Kim, R. Jammy,
“CMOS Band-Edge Schottky Barrier Heights Using Dielectric-Dipole
Mitigated (DDM) Metal/Si for Source/Drain Contact Resistance
Reduction,” Tech. Digest. 2009 Symp. VLSI Technology, pp. 104-105
(2009)
3.
B. Lee, G.
Mordi, T. Park, L. Goux, Y. J. Chabal, K. Cho, E. M. Vogel, M. J.
Kim, L. Colombo, R. M. Wallace, J. Kim, “Atomic-Layer-Deposited
Al2O3 as Gate Dielectrics for Graphene-Based Devices,”
ECS Transaction, 19(5), pp. 225-230 (2009)
4.
G. Lee, C.
Gong, A. R. Pirkle, A. Venugopal, B. Lee, S.Y. Park, L. Goux, M.
Acik, R. Guzman, Y. J. Chabal, J. Kim, E. M. Vogel, R. M. Wallace,
M. J. Kim, L. Colombo, K. Cho, “Materials Science of Graphene for
Novel Device Applications,” ECS Transaction, 19(5), pp. 185-199
(2009)
5.
C. Hinkle, M.
Milojevic, A. Sonnet, H. Kim, J. Kim, E. M. Vogel, R. M. Wallace,
“Surface Studies of III-V Materials: Oxidation Control and Device
Implications,” ECS Transaction, 19(5), pp. 387-403(2009)
6.
C. Hinkle, A.
Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F.
Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, “GaAs MOS frequency
dispersion reduction by surface oxide removal and passivation,”
IEEE-SISC (Arlington, Virginia, Dec. 6-8) 6-3 (2007)
7.
F.
Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R.
Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J.
Woodall, P. Ye, “XPS interface study of nano-laminated Al2O3/HfO2
high-k on GaAs,” IEEE-SISC (Arlington, Virginia, Dec. 6-8)
P-21 (2007)
8.
“C. Bae, S.
Kim, H. Shin, J. Kim, “Fabrication of nanoscale tubular structures
and capsules of oxides by ALD,” ECS Trans. 11 (7) (
9.
Jiyoung Kim,
Dongkyu Cha, K.J. Choi, Moon J. Kim,“In-situ
TEM observation on nanostructure evolution during electrical
stressing,” Proceeding of
8th
IEEE
Nonvolatile Memory Technology Symposium, (
10.
Amar Chowdhury,
S. Courtney, R. M. Wallace,
Jiyoung Kim, “Hydrogen diffusion through barrier layers,”
Proceeding of 8th IEEE Nonvolatile Memory
Technology Symposium (Albuquerque, New Mexico, Nov. 10-13) pp. 48-51
(2007)
11.
Y. Tan, C.
Young, D. Heh, C. Park, P. Sivasubramani, J. Huang, D. Gilmer, K.
Choi, J. Kim, M. Kim, P. Majhi, R. Choi, P. Kirsch, B. Lee, H.
Tseng, R. Jammy, “Improved flash memory program and erase window
with TiO2 charge trap layer and high temperature dopant
anneal,” 4th IEEE-IAGST, Sep.25-28, Dallas/TX, (2007)
12.
P.
Sivasubramani, T. Boscke, J. Huang, C. Young, P. Kirsch, S.
Krishnan, M. Quevedo-Lopez, S. Govindarajan, B. Ju, H. Harris, D.
Lichtenwalner, J. Jur, A. Kingon, J. Kim, B. Gnade, R. Wallace, G.
Bersukar, B. Lee, R. Jammy, “Dipole moment model explaning nFET Vt
tuning utilizing La, Sc, Er and Sr doped HfSiON dielectrics,” 2007
Symp. VLSI Tech. Dig. Tech., pp.68-69 (2007)
13.
Dongkyu Cha,
Bongki Lee, Moon J. Kim,
Jiyoung Kim, Sanghee Won, HyunJung Shin, Jaegab Lee, Myung Mo
Sung, “Fabrication and characteristics of TiO2 nanotubes
using atomic layer chemical vapor deposition,” ECS Trans. 3 (15),
pp.227-232 (2007)
14.
M. Kim, T.Lee, J.Kim, R.Wallace, B. Gnade, “Si-Based Resonant
Tunneling Devices Using UHV wafer Bonding,” ECS Trans. 3 (6), p. 75
(2006)
15.
P. Zhao,
J.Kim, M.J.Kim, B.E.Gnade
and R.M.Wallace, “Thermally Stable MoxSiyNz
as a Metal gate Electrode for Advanced CMOS Devices,” in
Characterization and Metrology for ULSI Technology, AIP Conference
Proceedings 788 (2005) 152.
16.
P. Zhao,
J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ
Metal Gate Electrode with Tunable Work Function for Advanced CMOS,”
Extended Abstracts of the International Conference on Solid State
Devices and Materials, Kobe, Japan, A-8-1, pp 848-849 (2005)
17.
I. Jeon, J.
Lee, P. Zhao, P. Sivasurbramani, T. Oh, H. Kim, D. Cha, J. Huang, M.
Kim, B. Gnade, J. Kim and
R. Wallace, “A novel methodology of tunning work function of metal
gate using stacking bi-metallic layers,” 2004 IEEE International
Electron Devices Meeting (IEDM) Technical Digest, San Francisco,
CA:, 300-306 (2004, 12)
18.
19.
Daekyun Jeong, Juwhan Park, Nohheon Park, Hyunjung Shin, JaeGab Lee,
Myung-Mo Sung, Jiyoung Kim, "Fabrication of Cu/ZrO2/Si
Structure Capacitors by a Novel Selective Deposition Technique on
Patterned Self-Assembled Monolayers (SAMs)”, 2003 AVS Topical
conference on Atomic Layer Deposition, pp 225-226 (2003, 3.)
20.
J.M. Koo, S.K. Hong, S.J. Yeom, J.S. Roh, and J. Kim, "High
Thermal Stability of Poly-Si Node CrTiN/TiN Double Barrier Layers
for High Density Ferroelectric Memory Application" IEDM 2001 Tech.
Digest. pp. 279-282,
21.
June-Mo Koo, TaeHo Kim and Jiyoung Kim, "Hydrogen Induced
Degradation Phenomena of PZT Ferroelectric Capacitors", Proceedings
of the 2000 12th IEEE International; Symposium on Applications of
Ferroelectrics (
22.
Sungwon Jung, Jae Gab Lee, Jiyoung Kim, "Ir Electrodes for
Ferroelectric Capacitors", MRS Symp. Proc., Vol. 493, pp.201-206
(1998.4)
23.
Jiyoung Kim,
Bo Jiang, R. Khamankar, J. Lee, "Effects of Microstructure on the
Electrical Characteristics of Sol-Gel derived PZT Thin Films", MRS
Symp.
Proc., Vol. 361, pp.409-415 (1995)
24.
R. Khamankar, Jiyoung Kim, Bo Jiang, Jack Lee, "Effects ac
Stress on Charge and Voltage Decay Rates of PZT Thin Film Capacitors
for DRAM Applications", MRS Symp. Proc., Vol. 361, pp.263-268 (1995)
25.
Robert Jones, Papu Maniar, J. Dupuie, Jiyoung Kim, "Impact of
a Ti Adhesion Layer on Pt/PZT/Pt Capacitors", MRS Symp. Proc., Vol.
361, pp.223-228 (1995)
26.
Bo Jiang, Jiyoung Kim, R. Khamankar, I. Lee, Jack Lee,
"Electron-beam Irradiation of High Dielectric Constant PLZT Thin
Film Capacitors", MRS Symp. Proc., Vol. 361, pp.85-90 (1995)
27.
R. Khamankar, Jiyoung Kim, B. Jiang, J. Lee, P. Maniar, R.
Jones, "Impact of Process Damages on Performance of High Dielectric
Constant PLZT Capacitor for ULSI DRAM Applicators", 1994 IEDM Tech.
Digest., pp.337-340 (1994)
28.
Jiyoung Kim,
C. Sudhama, R. Khamankar, B.Jiang, J. Lee, R. Jones, "La Doped PZT
Thin Films for Gigabit DRAM Technology", 1994 VLSI Tech.
Symp. Tech. Digest., pp.151-152 (1994)
29.
C. Sudhama, R. Khamankar, Jiyoung Kim, J. Lee, "Novel Methods
for the Reliability Testing of Ferroelectric DRAM Storage
Capacitors", 32nd Annual IEEE Inter. Reliability Phys.
Proc., pp.238-242 (1994)
30.
Jiyoung Kim,
C. Sudhama, R. Khamankar, J. Lee, "Ultrathin(65nm) Sputtered PZT
Films for ULSI DRAM Applications", MRS Symp.
Proc., Vol.
310, pp.473-478 (1993)
31.
Jack Lee, C. Sudhama, Jiyoung Kim, R. Khamankar, "High
Dielectric Constant Ferroelectric Thin Films for DRAM Applications",
Extended Abst. Inter. Conf. SSDM, pp.850-853 (1993)
32.
Jiyoung Kim,
V. Chikarmane, C. Sudhama, J. Lee, "The Impact of Device Asymmetry
on the Electrical and Reliability Properties of Ferroelectric PZT
for Memory Applications", MRS Symp. Proc., Vol.265, pp.313-318
(1992)
33.
C. Sudhama, Jiyoung Kim, Vinay Chikarmane, Jack Lee,
"Polarity and Area dependence of Reliability Characteristics of
Sputtered and Sol-Gel Derived Thin PLZT Films for DRAM
Applications", MRS Symp. Proc., Vol.243, pp.147-152 (1992)
34.
V. Chikarmane, C. Sudhama, Jiyoung Kim, Jack Lee, "The role
of the Pt-PZT interface in the Anomalous Phase Transformation and
Device Degradation in Sputtered Thin Film Capacitors at sub-200nm
Thickness", MRS Symp. Proc., Vol.243, pp.367-370 (1992)
35.
V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee, A. Tasch,
"The effects of Lead-Compensation and Thermal Processing on the
Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate
Thin Film Capacitors", MRS Symp. Proc., Vol.230, pp.297-302 (1992)
Korean Journal Review Articles (Written in Korean Language)
1.
Jun-Mo Koo,
Jiyoung Kim, “Bottom
Electrode System of High-K (Ferroelectric) Thin Film Capacitors for
Next Generation High Density Memory Device Applications”,
Trends in Metals & Materials Engineering, vol. 14 (6), pp.26-32
(2001)
2.
Jiyoung Kim, “Ferroelectric Thin Films for Gigabit (Gb)
Generation DRAM Capacitor Applications”, Ceramist, Vol.11(3),
pp.138-147 (1996)
Peer Reviewed Korean Journal Papers (Written in Korean Language)
1. Taekwan Oh, Sanghee Won, J.
Kim, "Characteristics of Mo Based Alloys for Advanced Dual Metal
Electrode Applications",
Electronic Materials Letters,
1, pp.155-159 (2005)
2. T. Kim, J. Koo, H. Min, I.
Lee, J. Kim,
“Effects of Interfacial Layers between PZT and Electrodes on PZT Thin Film
Capacitors”, Jour. of Korean Materials Research Society, vol.
10, No.10, pp 684-690,(2000.10)
3. Sungwon Jung, Hyung-Seok
Kim, June-mo Koo, Jiyoung Kim, "Surface Characteristics of Ir
Electrodes with Various Annealing Conditions”, Journal of Korean
Surface Engineering, Vol.33 (3), pp.149-156, (2000)
4. S. Oh, J. Kim, J. Kim, J.
Lee, I. Lim, K. Kim, "Formation of Tungsten Silicide Gate Electrode
on Glass Substrate”, Jour. of Korean Materials Research Society,
vol.8 (1), pp.80-84 (1998)
5. Jiyoung Kim, "Effects of
Addition of La on Characteristics of PLZT Thin Films for DRAM
Capacitor Applications”, Journal of the Korean Ceramic Society,
Vol.34 (10), pp.1060-1066 (1997)