|
| |
Advantages of modulated-power plasma processing.
Advantages of modulated-power plasma processing.
- Trenching, notching and charging damage can be reduced.
- S. Samukawa and T. Mieno, Plasma Sources Sci. Technol. 5, 132-8 (1996). “Highly selective, highly anisotropic, notch-free and charge-build-up-damage-free polycrystalline silicon etching is performed by using electron cyclotron resonance Cl2 plasma modulated at a pulse timing of a few tens of microseconds.”
- T. H. Ahn et. al. Plasma Sources Sci. Technol. 5, 139-44 (1996). “… ‘notching’ in gate poly-Si etching, is suppressed in a pulsed-power chlorine inductively coupled plasma (ICP).”
- S. Samukawa and T. Tsukada, Appl. Phys. Lett. 69, 1056-8 (1996). “The low frequency biased UHF plasma drastically reduces the charge accumulation on the resist mask because negative and positive ions can both be inserted alternately by following the rf oscillation. … Thus, the surface is quickly neutralized.”
- T. Shibayama et. al. Plasma Sources Sci. Technol. 5, 254-9 (1996). “The Si etching rate, which was obtained under 400 kHz RF bias, has a maximum at the same pressure as has the F- density, confirming that the negative ion etching was effective.”
|