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UNDER RECONSTRUCTION (slowly...)   Updated: 10/97

EE 3310: ELECTRONIC DEVICES:
Instructor: Dr. Lawrence J. Overzet
Telephone: UTD-2154; after 4 rings you get my message service
Office Hours: Are setup each semester, EC 2.930
Textbook: Semiconductor Device Fundamentals, R. F. Pierret.
Useful references: Solid State Electronic Devices; Fourth Edition, B. G. Streetman

Course Schedule:
 

Date	Topic	Reading
1/9	Introduction to course, Quantum Mechanics	1 - 2.1, App. A
1/14	Charge carriers, bonding in solids, energy bands, effective mass	2.2 - 2.3
1/16	Fermi statistics, density of states, carrier concentrations	2.4 - 2.5.1
1/21	Charge carrier concentrations, law of mass action.	2.5 - 2.6
1/23	Carrier drift and mobility, resistivity, and drift current.	3.1.1 - 3.1.4
1/28	Band bending, diffusion, Einstein relationship	3.1.5 - 3.2
1/30	Excess carriers, generation and recombination, lifetime	3.3 - 3.4
2/4	Diffusion length, quasi-Fermi level, photo conductivity	3.5 - 3.6
2/6	Continuity equations, possible make-up period, review, Q & A	4 (read only)
2/11	Intro. to pn junctions, equilibrium, contact potential, space charge	5.1 - 5.2
2/13	EXAM # 1 (Chp. 1 - 3)
2/18	Junction width, pn junction with bias, energy band diagrams	5..2 - 5.3
2/20	Ideal diode I-V Eqn., carrier injection and distribution	6.1
2/25	Carrier currents, reverse bias breakdown, charge control analysis	6.1, 6.2.2, 6.3.1
2/27	PN junctions A-C bias response, capacitance	Chp. 7
3/4	PN junctions transient bias response	Chp. 8, (read only 9.3 - 9.4)
3/6	Metal-Semiconductor junctions, Ohmic contacts, Schottky barriers	Chp. 14
3/11	SPRING BREAK
3/13	SPRING BREAK
3/18	Introduction to amplification, introduction to FET (JFET)	15.1 - 15.2.2
3/20	EXAM #2 (Chp. 4 - 9)
3/25	JFET I-V relationship, MESFET	15.2.3 - 15.4
3/27	IGFET introduction, MOS structures, qualitative electrostatics	16.1 - 16.2
4/1	MOS devices, quantitative electrostatics, threshold voltages	16.3
4/3	Capacitance - voltage characteristics	16.4 - 16.5
4/8	MOSFET qualitative theory of operation, ideal	17.1 - 17.2.1
4/10	MOSFET quantitative ID - VD, AC response	17.2 - 17.3
4/15	Threshold voltages in non-ideal MOS	18.1 - 18.3
4/17	BJT basics: statics, band diagrams, basic operation parameters	10.1, 10.3 - 10.5
4/22	Ideal BJT I-V relationship: Ebers-Moll equations	11.1
4/24	EXAM #3 (Chp. 14 - 18)
4/29	BJT transient bias response	12.1 - 12.3
5/6	FINAL EXAM 5:00 pm in EC2.126	Comprehensive

  Homework: Homework will be assigned on Tuesday or Thursday and is due at the beginning of the following Tuesday. Each student must turn in individual work. All assigned work will be collected.

Course grading:

10% Weekly Assigned Homework
20% Exam I
20% Exam II
20% Exam III
30% Final Exam

Last day to drop this course with an automatic W is Thursday, March 20.

EE 3210: ELECTRONIC DEVICES: SPRING 1997
Instructor: Dr. Lawrence J. Overzet
Telephone: UTD-2154; after 4 rings you get my message service
Office Hours: Are setup each semester, EC 2.930
Textbook: Electronic Devices Laboratory Manual, J. van der Ziel
Useful references: Semiconductor Device Fundamentals, R. F. Pierret.
Solid State Electronic Devices; Fourth Edition, B. G. Streetman

Laboratory Schedule:
 

Date:	Lab. (Number and Topic)
1/16	LAB #0 Introduction to course, ASSIGN: Study LabView
1/23	LAB #1 Introduction to the Laboratory, Equipment, and LabView
1/30	LAB #2 Conductivity and the Hall effect
2/6	LAB #3 Silicon Diode Characteristics
2/13	LAB #4 Visible Light Emitting Diodes
2/20	LAB #5 Silicon Diode Solar Cells
2/27	LAB #6 Small Signal Models of pn Junction Diodes
3/6	LAB #6 cont'd
3/13	SPRING BREAK
3/20	LAB #7 Transient Performance of pn Junction Diodes
3/27	LAB #12 JFET Characteristics
4/3	LAB #13 MOSFET Characteristics (I)
4/10	LAB #14 MOSFET Characteristics (II)
4/17	LAB #8 DC Characteristics and biasing of the BJT
4/24	LAB #9 Small Signal Models of the BJT

  Laboratory grading: See the Lab Manual for further details.

15% Homework (Pre-laboratories)
10% Laboratory Performance (judged by participation)
10% Laboratory Notebook
65% Laboratory Reports

Last day to drop this course with an automatic W is listed in the catalog.
If you drop the EE3210 Lab, you must also drop the EE3310 class.

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