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THE UNIVERSITY OF TEXAS AT DALLAS
ERIK JONSSON SCHOOL OF ENGINEERING & COMPUTER SCIENCE
EE 6322: Semiconductor Processing Technology
Instructor: Dr. Lawrence J. Overzet
Telephone: UTD-2154; after 4 rings you get my message service
Office Hours: Are setup each semester, EC 2.930
Textbook: "Silicon Processing for the VLSI era," S. Wolf and
R. N. Tauber, Lattice Press, 1986.
Useful references:
"Semiconductor Integrated Circuit Processing Technology", W.
Runyan and K. Bean, Addison Wesley 1990.
"Modern GaAs Processing Methods, " R. Williams, Artech House,
1990 and
"An Introduction to Semiconductor Microtechnology ", D. V. Morgan
and K. Board, J. Wiley and Sons, 1990.
Homework will be assigned on a regular basis. Students
are allowed to consult together on homework assignments; but, each student
must turn in individual work. Copying someone else's homework is only going
to hurt you in the long run.
A Semester Report will be required. You are required to
write a 5-10 typewritten page term paper on a topic related to the fabrication
or processing of semiconductor devices. (A minimum of 5 written pages plus
figures. A maximum of 10 written pages INCLUDING figures.It should be double
spaced and use a 12 pt. font.) It should review current literature and
contain at least 4 references. You must choose your topic and have it approved
by me before October 17th. It is due on November 25th.
Late papers are docked 25% per day late.
There will be 1 test and a Final Exam.
Exam: 25%
Homework: 20%
Report: 20%
Final: 35%
EE6322 - Semiconductor Processing Technology
Approx. Course Syllabus: WT-1=Wolf and Tauber Chp.1, RB-4=Runyan
and Bean Chp.4.
Lecture
|
Topic
|
Reading
|
1 |
Overview of Fabrication |
RB-1,2 WT prologue |
2 |
Design of Experiments I |
RB-11 WT-18 |
3 |
Design of Experiments II |
|
4 |
Design of Experiments III |
|
5 |
Crystalline Semiconductors I |
WT-1,2 |
6 |
Crystalline Semiconductors II |
|
7 |
Crystalline Semiconductors III |
|
8 |
Patterning I |
RB-5, WT-12,13,14 |
9 |
Patterning II |
|
10 |
Patterning III |
|
11 |
Oxidation I |
RB-3, WT-7 |
12 |
Oxidation II |
|
13 |
*** Exam I *** |
|
14 |
Doping-Diffusion I |
RB-8, WT-8 |
15 |
Doping-Diffusion II |
|
16 |
Doping-Diffusion III |
|
17 |
Doping-Implantation I |
RB-9, WT-9 |
18 |
Implantation II |
|
19 |
Evaluation of Doped Layers |
RB-8, WT-8,9 |
20 |
Thin Films - Basics |
RB-4, WT-4 |
21 |
Thin Films - Epitaxy I |
RB-7, WT-5,6 |
22 |
Epitaxy II |
|
23 |
Epitaxy III |
|
24 |
Thin Films - Protection & Masking |
RB-4 |
25 |
Thin Films - Interconnects |
RB-4, WT-10,11 |
26 |
Thin Film Diagnostics |
RB-8, WT-17 |
26 cont'd |
Reports Due |
|
27 |
** Thanksgiving ** |
|
28 |
Etching I |
RB-6, WT-15,16 |
29 |
Etching II |
|
30 |
Review and close out semester |
|
|
|
|
|
Final Exam, Comprehensive |
|
Grading the EE 6322 Final Reports:
Factors to Note: |
Points |
Points Rec. |
1. Does the paper have good DEPTH OF COVERAGE? |
15 |
|
2. Does the paper use REFERENCES properly? |
25 |
|
a. In the figure captions |
7 |
|
b. In the Text |
8 |
|
c. In the Bibliography |
10 |
|
3. COHERENCE of the Argument? |
10 |
|
4. Demonstrated UNDERSTANDING? |
15 |
|
5. FIGURES |
15 |
|
a. Relevant? |
3 |
|
b. In order of reference? |
2 |
|
c. Acceptable quality? |
5 |
|
d. Captioned? |
5 |
|
6. ENGLISH usage |
20 |
|
a. Spelling |
10 |
|
b. Grammar |
10 |
|
|
|
|
Total points: |
100 |
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University of Texas at Dallas,
P.O. Box 830688, EC33
Richardson, TX 75083-0688
Tel: (972)883-2154
Fax: (972)883-6839
email: overzet@utdallas.edu
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