Robert M. Wallace is the Erik Jonsson Distinguished Chair and Professor of Materials Science and Engineering. He received the B.S. in Physics and Applied Mathematics (1982), the M.S. (1984) and the Ph.D. (1988) in Physics at the University of Pittsburgh under Professor Jim Choyke. From 1988 to 1990, he was a postdoctoral research associate in the Department of Chemistry at the Pittsburgh Surface Science Center under Professor John T. Yates, Jr.
In 1990, he joined Texas Instruments Central Research Laboratories as a Member of Technical Staff (MTS) in the Materials Characterization Branch of the Materials Science Laboratory, and was elected as a Senior MTS in 1996. Dr. Wallace was then appointed in 1997 to manage the Advanced Technology branch in TIís R&D consisting of 15 professionals and staff that focused on advanced device concepts and the associated material integration issues.
In May 1999, he joined the faculty at the University of North Texas as a Professor of Materials Science and director of the Laboratory for Electronic Materials and Devices. In 2003, he joined the faculty in the Erik Jonsson School of Engineering and Computer Science at the University of Texas at Dallas (UTD) as a Professor of Electrical Engineering and Physics. He is a founding member of the Materials Science and Engineering program at UTD, served as an interim head for the program, and facilitated the transformation of the program into a department to the current level of 14 faculty and more than 75 graduate students and postdocs. In addition to his research program in nanoelectronic materials, Wallace was also the director of the new 5000 sq. ft. Cleanroom Research Laboratory for 6 years, supervising a staff of 9 and an annual budget >$2M. (see: http://www.utdallas.edu/research/cleanroom/) He was responsible for the oversight of the facility construction, tool purchases and installation, and assembly of the staff for the facility. Dr. Wallace also has courtesy appointments in the Departments of Electrical Engineering, Mechanical Engineering, and Physics at UT-Dallas.
He has authored or co-authored over 215 publications in peer reviewed journals and proceedings, more than 165 contributed and 45 invited talks at international meetings and symposia, as well as 70 US and international patents. A review published in the Journal of Applied Physics on high-k gate dielectrics which he coauthored was recognized by the Semiconductor Research Corporation as one of the most influential research publications in the field with more than 3600 citations to date according to the Scopus database, and has been selected among the 45 top cited publications by the American Institute of Physics over the last 75 years. It is currentlythe most highly cited publication in the Journal of Applied Physics.
Dr. Wallace is also a co-inventor of the Hf-based high-k gate dielectric materials now used by the semiconductor industry for advanced high performance logic in microprocessors. He was named Fellow of the AVS in 2007 and an IEEE Fellow in 2009 for his contributions to the field of high-k dielectrics in integrated circuits. In 2010, he was selected to receive the Louis A. Beecherl, Jr. Distinguished Professorship II in the Erik Jonsson School of Engineering and Computer Science at UT-Dallas.
He is a member of the Applied Surface Science and the Electronic Materials and Processing divisions in the AVS, a member of the Materials Research Society, a member of the American Chemical Society, and a member of the Electrochemical Society. His interests include nanoscale materials and integration issues for advanced devices including gate dielectrics, gate electrodes as well as nanoelectronics. Dr. Wallace also consults for semiconductor and nanotechnology companies as well as on intellectual property matters.