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EE 4330 - Integrated Circuit Technology
Spring 2007
When: TR 2:30PM-3:45PM
Where: ECSN 2.110
[download syllabus in pdf format]
NOTE: Course materials available only in WEBCT
Info:
Instructor: Professor Walter (Wenchuang) Hu
Telephone: (972) 883-6329
Email: walter.hu@utdallas.edu
Website: www.utdallas.edu/~walter.hu/teaching/EE4330.htm
Office Hours: Wednesdays 5 PM–6 PM or by appointment in ECSN 2.226
Textbook: “Introduction to Microelectronic Fabrication”, Richard C. Jaeger, Prentice Hall, 2002. ISBN: 0-201-44494-1
References:(1) “Fundamentals of Microfabrication”, Madou, M. CRC Press, 2002. (2) “Silicon VLSI Technology” Plummer, J., M. Deal, P. Griffin. Prentice Hall, 2000.
Outline:
This course will teach you about the fundamental science and technologies of integrated circuits (IC) fabrication, which include MOS and b ipolar technologies , photolithography, oxidation, diffusion, ion-implantation, epitaxial growth, thin and thick film components , and d esign and layout of integrated devices. Students will also learn to use a software to simulate CMOS fabrication process by the end of class. Extending of IC t echnologies in emerging nanotech frontiers will be introduced briefly, which include nanoelectronics and information technology, molecular electronics, organic electronics, and bionanotechnology. In addition, an on-site visit to Texas Instrument IC fabrication facility will be arranged. Prerequisites: EE 3310 or EE 3300.
Grading:
15 % Regularly Assigned Homework
10% Semester Project
20 % Midterm Exam I
20% Midterm Exam II
35 % Final Exam
Rules and Regulation:
1. No laptop computer use in classroom. No eating, drinking, or smoking in classroom.
2. Students who miss the Midterm Exams or Final Exam without a valid excuse will receive a score of zero. Students with a valid excuse for missing the Test or Final Exam MUST make arrangements beforehand or receive a score of zero.
Homework:
Homework will be assigned on Monday or Wednesday after the class and is due at same time next week . Each student must turn in individual work. All assigned work will be collected at the beginning of the class. Late homework assignments will not be accepted, unless arrangements were made beforehand.
Tentative Schedule:
Lecture |
Topic |
Reading |
Homework |
1/9 |
Overview I |
§1.1-2 |
|
1/11 |
Overview II |
§1.3-5 |
hw1 |
1/16 |
Lithography |
§2.1 |
|
1/18 |
Etching; Microscopy |
§2.2-6 |
hw2 |
1/23 |
Oxidation I |
§3.1-5 |
|
1/25 |
Oxidation II |
§3.6-10 |
hw3 |
1/30 |
Diffusion I |
§4.1--4 |
|
2/1 |
Diffusion II |
§4.5-8 |
hw4 |
2/6 |
Diffusion III |
§4.9-11 |
|
2/8 |
Midterm Exam I 2:30 PM |
|
|
2/13 |
Midterm exam solutions |
|
|
2/15 |
Implantation I |
§5 |
hw5 |
2/20 |
Implantation II |
|
|
2/22 |
Film Deposition I |
§6.1-2 |
|
2/27 |
Film Deposition II |
§6.3-4 |
hw6 |
3/1 |
Contacts, Interconnections, Packaging, Yield |
§7,8 |
|
3/13 |
Midterm Exam II 3:30 PM |
|
|
3/15 |
Midterm exam solutions |
|
|
3/20 |
MOS Process Integration I |
§9.1-2 |
|
3/22 |
MOS Process Integration II |
|
|
3/27 |
MOS Process Integration III |
§9.3-4 |
hw7 |
3/29 |
Intellisuite software training |
Tutorial |
project kick-off |
4/3 |
BJT Integration |
|
|
4/5 |
Visit Texas Instrument IC Facility |
|
|
4/10 |
Nanoelectronics and Information Technology I |
Handouts |
|
4/12 |
Organic and Molecular Electronics |
Handouts |
|
4/18 |
Project presentation and summary |
|
project due |
4/19 |
Class review and summary |
|
|
TBD |
Final Exam |
Comprehensive |
Last Updated: Dec. 19th, 2006
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