http://www.mse.utdallas.edu/index.html
Faculty
Professors: Yves Chabal, Bruce E. Gnade, Moon J. Kim, Don Shaw
(Emeritus), Robert M. Wallace
Associate Professors: Kyeongjae (KJ)
Cho, Jiyoung Kim, Eric Vogel
Research Professors: Husam
Alshareef, Wiley Kirk, Manuel
Quevedo-Lopez, Padmakumar Nair Affiliated
Faculty: Kenneth J. Balkus (Chemistry), Ray H. Baughman (Chemistry), Cyrus
D. Cantrell (Electrical Engineering), Santosh R.
D'Mello (Biology), Rockford K. Draper (Biology), John P. Ferraris (Chemistry),
Yuri Gartstein (Physics), Robert Glosser (Physics), Juan E. Gonz�lez
(Biology), Wenchuang Hu
(Electrical Engineering), Mihaela Iovu (Chemistry), Gil S. Lee (Electrical
Engineering), Jeong-Bong Lee (Electrical Engineering), Anton Malko (Physics), Sanjeev K. Manohar (Chemistry), Inga Holl Musselman
(Chemistry), Lawrence J. Overzet (Electrical Engineering), Anvar
A. Zakhidov (Physics)
Adjunct Faculty:� H. Edwards (Texas Instruments), E. Forsythe
(Army Research Laboratory), R. Irwin (Texas Instruments)
Objectives
The program leading to the M.S. degree in materials science and engineering provides intensive preparation for professional
practice in modern materials science by those engineers who wish to continue
their education. Courses are offered at a time and location convenient for the
student who is employed on a full-time basis.
The objective of the doctoral program in materials science and engineering is to prepare individuals to perform
original, cutting edge research in the broad areas of materials science,
including areas such as nano-structured materials, electronic,
optical and magnetic materials, bio-mimetic materials,
polymeric materials, MEMS materials and systems, organic electronics, and advanced
processing of modern materials.�
Facilities
The
Nanoelectronic
Materials Research Laboratory
A unique multi-module cluster tool is
utilized for the fabrication and characterization of thin films in the
Nanoelectronic Materials Research Laboratory.�
The system is capable of thin film deposition using PVD and CVD methods
including electron beam evaporation, molecular beam deposition, atomic layer
deposition, sputter deposition and thermal evaporation methods. Additionally, in-situ characterization techniques
include angle-resolved monochromatic x-ray and ultraviolet photoelectron
spectroscopy, Auger electron spectroscopy, atomic force and scanning tunneling
microscopy/spectroscopy.� The system
utilizes 100mm diameter wafers (for cleanroom process compatibility), and
modified sample plates for the various deposition and characterization
techniques.� Wafers are transported
throughout the system in a UHV transfer tube.�
Each deposition module has heating and rotational capability for the
study of film uniformity and growth kinetics. �The laboratory housing the tool is also equipped with wet
chemical preparation facilities for wafer surface preparation.
Surface Optical
Spectroscopy Laboratory
This new facility features FTIR, Raman, and Ellipsometry
equipment configured to study surfaces, interfaces, and ultra-thin films
in controlled environments. These instruments are therefore mounted on
ultra-high vacuum chambers with standard UHV characterization tools, such as
low energy electron diffraction, Auger electron spectroscopy and Mass
spectrometry, or on reaction chambers, such as Atomic Layer Deposition reactors
and high pressure cells.
Advanced Electron
Microscopy Laboratory
Focused
Ion Beam /Scanning Electron Microscopy
The focused ion beam system is a FEI
Nova 200 NanoLab which is a dual column SEM/FIB.� It combines ultra-high resolution field
emission scanning electron microscopy (SEM) and focused ion beam (FIB) etch and
deposition for nanoscale prototyping, machining, 2-D and 3-D characterization,
and analysis.� Five gas injection systems
are available for deposition (e.g. Pt, C, SiO2)
and etching (e.g. Iodine for metals, and a dielectric etch).� Nanoscale chemical analysis is
done with energy dispersive X-ray spectroscopy (EDS).� A high resolution digital patterning system
controlled from the User Interface is also available.� Predefined device structures in Bitmap format
can be directly imported to the patterning system for nanoscale
fabrication.� The FEI Nova 200 is also
equipped with a Zyvex F100 nano-manipulation stage, which includes four
manipulators with 10 nm positioning resolution.�
The four manipulators can be fitted with either sharp whisker probes for
electrically probing samples or microgrippers for manipulating nanostructures
as small as 10 nanometers.� This is the
first instrument of its kind in the world that combines a dual beam FIB with
the F100 nanomanipulator, providing unparalleled nanofabrication and
nanomanipulation.
High-Resolution Transmission Electron Microcopy
The facility operates and maintains two
state-of-the-art transmission electron microscopes (TEM), and a host of sample
preparation equipments.� It also provides
microscopy computing and visualization capabilities.� Techniques and equipment available includes
the following:� (i) High Resolution Structural Analysis - The high-resolution imaging
TEM is a JEOL 2100 F which is a 200kV field emission TEM.� Its capability includes atomic scale
structural imaging with a resolution of better than 0.19 nm, and in-situ
STM/TEM.� (ii) High Resolution Chemical and Electronic Structure Analysis - High resolution analytical TEM is a
second JEOL 2100F field emission TEM/STEM equipped with an energy dispersive
x-ray spectrometer (EDS), an electron energy loss spectrometer (EELS), and a
high angle Z-contrast imaging detector.�
This instrument performs chemical and electronic structure analysis with
a spatial resolution of better than 0.5 nm in EELS mode and is also capable of
spectrum imaging and mapping.� The image
resolution in the chemically sensitive Z-contrast scanning TEM (STEM) mode will
be about 0.14 nm.� Its capability also
includes in-situ cryogenic cooling and heating, and a computer control system
for remote microscopy operation.
X-ray Diffraction Suite
A Rigaku Ultima III X-ray
Diffractometer system is available for thin film diffraction characterization.
The system is equipped with a cross beam optics system to permit either
High-resolution parallel beam with a motor controlled multilayer mirror, or a
Bragg-Brentano Para-Focusing beam (without the multilayer mirror) which are
permanently mounted, pre-aligned and user selectable with no need for any
interchange between components. Curved graphite crystal or Ge monochromators
are also available. An integrated annealing attachment permits the in-situ examination of film structure up
to 1500�C. The instrument enables a variety of applications including in-plane
and normal geometry phase identification, quantitative analysis, lattice
parameter refinement, crystallite size, structure refinement, residual stress,
density, roughness (from reflectivity geometries), and depth-controlled phase
identification.� Detection consists of a
computer controlled scintillation counter. Sample sizes up to 100 mm in
diameter can be accommodated on this system.�
A new Rigaku Rapid Image Plate Diffractometer system is also available
for small spot (30mm - 300mm) XRD work. The digital image plate system enables
the acquisition of diffraction data over a 204� angle with a rapid laser
scanning readout system. An integrated annealing attachment permits the in-situ examination of film structure up
to 900C on this system. A complete set of new control, database and analysis
workstations and software is associated with these new systems.
Wafer Bonding
Laboratory
An UHV wafer bonding unit, especially
designed to use surface characterization and thin-film deposition techniques to
measure and control substrate and interface chemistry within limits necessary
to make heterojunction devices, is available to produce integrated heterostructures
with well controlled chemistry that are tractable for quantitative
nanostructural and properties measurements.�
This unit is capable of synthesizing interfaces by direct wafer
bonding and/or in-situ thin film deposition method, and offers greater flexibility
for producing advanced integrated artificial structures.� It consists of five interconnected ultra high
vacuum (UHV) chambers for in-situ surface preparation and analysis, addition of
interface interlayers by e-beam or UHV sputter deposition, a bonding chamber,
and a sample entry and preparation chamber. �The base pressure is 2x10-10
Torr.� Orientation of the bonded pairs
can be controlled to ~ 0.1 degree prior to bonding.� Ex-situ surface preparations using etching
and low energy reactive plasma cleaning is done in a cleanroom to protect
substrates prior to insertion in the bonding instrument.� An atomic force microscopy (AFM) is also
available to provide direct measurements of these effects, to supplement the indirect
information of RHEED.
Computational
Materials Science Laboratory
Materials modeling software tools and
hardware facilities are available for nanoscale materials research. Atomistic
modeling software tools are used for structure and dynamic analysis of diverse
material systems at nanoscales, and the examples include nanoelectronic
materials and nanomaterials for renewable energy applications. For quantum
mechanical analysis of materials, density functional theory (DFT) software
tools (VASP, ABINIT, PWSCF, and SIESTA) are used on local parallel computing
cluster. In-house quantum transport modeling software tool is used for I-V
calculation of nanoelectronic devices using the non-equilibrium Green�s
function (NEGF) method. These software and hardware tools are also used for
class projects of MSEN 5377.�
Cleanroom Research
Laboratory
The new cleanroom facility located in
the Natural Science and Engineering Research Laboratory (http://www.utdallas.edu/eecs/cleanroom/)
is utilized for materials and device research.� The facility has 5,000 sq. ft. of class
10,000 space.� This facility contains
semiconductor processing equipment including optical and e-beam lithography,
chemical processing hoods, evaporation and sputter deposition systems, as well
as a wide variety of material and processing diagnostics.�
In addition to the facilities on
campus, cooperative arrangements have been established with many local
industries to make their facilities available to U.T. Dallas graduate
engineering students.
Master of Science
in Materials Science and Engineering
Admission
Requirements
The University�s general admission requirements are
discussed here.
A student lacking undergraduate prerequisites for graduate
courses in Materials Science and Engineering must complete these prerequisites or receive approval from the
graduate adviser and the course instructor.
A diagnostic exam may be required. Specific admission
requirements follow.
The student entering the MSEN program should meet the
following guidelines:
�
Student has met standards equivalent to
those currently required for admission to the Ph.D. or Master�s degree programs
in Electrical Engineering, Chemistry, Physics, or Biology.�
�
a grade-point average in graduate-level
course work of 3.5 or better on a 4-point scale
�
GRE scores of 500, 700 and 4 for the
verbal, quantitative and analytical writing components, respectively, are advisable
based on our experience with student success in the program.
Students who fulfill some of the above requirements, if admitted
conditionally, will be required to take graduate level courses as needed to
make up any deficiencies.
Degree Requirements
The University�s general degree requirements are discussed here.
The MSEN M.S. degree requires a minimum of 33 semester
hours.
All students must have an academic advisor and an approved
degree plan. These are based upon the student�s choice of concentration.
Courses taken without advisor approval will not count toward the 33
semester-hour requirement. Successful completion of the approved course of
studies leads to the M.S. degree.
M. S. students undertaking the thesis
option must carry out a research project under the direction of a member of the
Materials Science and Engineering Affiliated Faculty and complete and defend a
thesis on the research project.� A
Supervisory Committee will be appointed once the faculty member accepts the
student for a research project. The rules for the thesis defense are specified
by the Office of the Dean of Graduate Studies.
For each of the proposed degree
programs, students must pass the following core courses with a grade of B or
better:
Note: the presence of a course number
in parentheses indicates that this course will be cross-listed with an existing
course.
�
MSEN 5310 Thermodynamics of
Materials���
�
MSEN 5360 Materials
Characterization��
�
MSEN 6324 (EE 6324)
Electronic, Optical and Magnetic Materials
�
MSEN 6319 Quantum Mechanics for
Materials Scientists
A
student may petition for waiver of core courses, and if the Materials Science
and Engineering Affiliated Faculty, or a designated committee, finds that the
student has mastered the course material, the student may replace that core
course with an elective course for a total of twelve semester credit hours.
A minimum of 9 semester credit hours will be required from
the Advanced Course List
�
MSEN 5340 Advanced Polymer Science and
Engineering��
�
MSEN 5370 Ceramics and Metals��
�
MSEN 5377 (PHYS 5377) Computational
Physics of Nanomaterials
�
MSEN 6310 Mechanical Properties of
Materials
�
MSEN 6330 Phase Transformations
�
MSEN 6350 Imperfections in Solids�
�
MSEN 6377 (PHYS 6377) Physics of
Nanostructures: Carbon Nanotubes, Fullerenes, Quantum Wells, Dots and Wires
The remaining credit hours are to be taken from the
following list of Specialized Courses (or approved electives from Physics,
Chemistry, or Biology):
�
MSEN 5300 Introduction to Materials
Science��
�
MSEN 5331 (CHEM 5331) Advanced Organic
Chemistry I
�
MSEN 5333 (CHEM 5333) Advanced Organic
Chemistry II
�
MSEN 5341 (CHEM 5341) Advanced
Inorganic Chemistry
�
MSEN 5344 Thermal Analysis��
�
MSEN 5353 Integrated Circuit
Packaging��
�
MSEN 5355 (CHEM 5355) Analytical
Techniques I
�
MSEN 5356 (CHEM 5356) Analytical
Techniques II
�
MSEN 5361 Fundamentals of Surface and
Thin Film Analysis��
�
MSEN 5371 (PHYS 5371)
�
MSEN 5375 (PHYS 5375) Electronic
Devices Based On Organic Solids
�
MSEN 5383 (PHYS 5383 and EE 5383)
Plasma Technology
�
MSEN 5410 (BIOL 5410) Biochemistry of
Proteins and Nucleic Acids
�
MSEN 5440 (BIOL 5440) Cell Biology
�
MSEN 6313 (EE 6313) Semiconductor
Opto-Electronic Devices
�
MSEN 6320 (EE6320) Fundamentals of
Semiconductor Devices
�
MSEN 6321 (EE6321) Active Semiconductor
Devices
�
MSEN 6322 (EE6322) Semiconductor
Processing Technology
�
MSEN 6340 Advanced Electron
Microscopy��
�
MSEN 6341 Advanced Electron Microscopy
Laboratory
�
MSEN 6358 (BIOL 6358)
Bionanotechnology�����
�
MSEN 6361 Deformation Mechanisms in Solid Materials��
�
MSEN 6362 Diffraction Science���
�
MSEN 6371 (PHYS6371) Advanced
�
MSEN 6374 (PHYS6374) Optical Properties
Of Solids
�
MSEN 7320 (EE7320) Advanced
Semiconductor Device Theory
�
MSEN 7382 (EE7382) Introduction to MEMS
�
MSEN 7V80 Special Topics in Materials
Science and Engineering���
�
MSEN 8V40 Individual Instruction in
Materials Science and Engineering��
�
MSEN 8V70 Research In Materials Science
and Engineering��
�
MSEN 8V98 Thesis
�
MSEN 8V99 Dissertation��
Doctor
of Philosophy in Materials Science and Engineering
Admission
Requirements
The University�s general admission requirements are
discussed here.
A student lacking undergraduate prerequisites for graduate
courses in Materials Science and Engineering must complete these prerequisites or receive approval from the
graduate adviser and the course instructor.
A diagnostic exam may be required. Specific admission
requirements follow.
The student entering the MSEN program should meet the
following guidelines:
�
Student has met standards equivalent to
those currently required for admission to the Ph.D. or Master�s degree programs
in Electrical Engineering, Chemistry, Physics, or Biology.�
�
a grade-point average in graduate-level
course work of 3.5 or better on a 4-point scale
�
GRE scores of 500, 700 and 4 for the
verbal, quantitative and analytical writing components, respectively, are
advisable based on our experience with student success in the program.
Students who fulfill some of the above requirements, if admitted
conditionally, will be required to take graduate level courses as needed to
make up any deficiencies.
Degree
Requirements
The University�s general degree requirements are discussed here.
The MSEN Ph.D. requires a minimum of 60 semester hours
beyond the Master�s degree.
All students must have an academic advisor and an approved
degree plan. Courses taken without advisor approval will not count toward the
60 semester-hour requirement. Successful completion of the approved course of
studies leads to the MSE.
Each doctoral student must carry out
original research in the area of Materials Science and Engineering, under the
direction of a member of the Materials Science and Engineering Affiliated
Faculty, and complete and defend a dissertation on the research project.� A Supervisory Committee will be appointed
once the faculty member accepts the student for a research project. Students
must be admitted to doctoral candidacy by passing a Qualifying Exam, which will
be administered at approximately the time that the students have completed
their course work.� The rules for the
dissertation research and defense are specified by the Office of the Dean of
Graduate Studies.
For each of the proposed degree
programs, students must pass the following core courses with a grade of B or
better:
Note: the presence of a course number
in parentheses indicates that this course will be cross-listed with an existing
course.
�
MSEN 5310 Thermodynamics of
Materials���
�
MSEN 5360 Materials
Characterization��
�
MSEN 6319� Quantum Mechanics for Materials Scientists
�
MSEN 6324 (EE 6324)
Electronic, Optical and Magnetic Materials
A
student may petition for waiver of core courses, and if the Materials Science
and Engineering Affiliated Faculty, or a designated committee, finds that the
student has mastered the course material, the student may replace that core
course with an elective course for a total of twelve semester credit hours.
A minimum of 9 semester credit hours will be required from
the Advanced Course List
�
MSEN 5340 Advanced Polymer Science and
Engineering�� ��������
�
MSEN 5370 Ceramics and Metals��
�
MSEN 5377 (PHYS 5377) Computational
Physics of Nanomaterials
�
MSEN 6310 Mechanical Properties of
Materials�
�
MSEN 6330 Phase Transformations��
�
MSEN 6350 Imperfections in Solids��
�
MSEN 6377 (PHYS 6377) Physics of
Nanostructures: Carbon Nanotubes, Fullerenes, Quantum Wells, Dots and Wires
The remaining credit hours are to be taken from the
following list of Specialized Courses (or approved electives from Physics,
Chemistry, or Biology):
�
MSEN 5300 Introduction to Materials
Science��
�
MSEN 5331 (CHEM 5331) Advanced Organic
Chemistry I
�
MSEN 5333 (CHEM 5333) Advanced Organic
Chemistry II
�
MSEN 5341 (CHEM 5341) Advanced
Inorganic Chemistry
�
MSEN 5344 Thermal Analysis��
�
MSEN 5353 Integrated Circuit
Packaging��
�
MSEN 5355 (CHEM 5355) Analytical
Techniques I
�
MSEN 5356 (CHEM 5356) Analytical
Techniques II
�
MSEN 5361 Fundamentals of Surface and
Thin Film Analysis��
�
MSEN 5371 (PHYS 5371)
�
MSEN 5375 (PHYS 5375) Electronic
Devices Based On Organic Solids
�
MSEN 5383 (PHYS 5383 and EE 5383)
Plasma Technology
�
MSEN 5410 (BIOL 5410) Biochemistry of
Proteins and Nucleic Acids
�
MSEN 5440 (BIOL 5440) Cell Biology
�
MSEN 6313 (EE 6313) Semiconductor
Opto-Electronic Devices
�
MSEN 6320 (EE6320) Fundamentals of
Semiconductor Devices
�
MSEN 6321 (EE6321) Active Semiconductor
Devices
�
MSEN 6322 (EE6322) Semiconductor
Processing Technology
�
MSEN 6340 Advanced Electron
Microscopy� �
�
MSEN 6341 Advanced Electron Microscopy
Laboratory
�
MSEN 6358 (BIOL 6358)
Bionanotechnology��
�
MSEN 6361 Deformation Mechanisms in Solid Materials��
�
MSEN 6362 Diffraction Science���
�
MSEN 6371 (PHYS6371) Advanced
�
MSEN 6374 (PHYS6374) Optical Properties
Of Solids
�
MSEN 7320 (EE7320) Advanced
Semiconductor Device Theory
�
MSEN 7382 (EE7382) Introduction to MEMS
�
MSEN 7V80 Special Topics in Materials
Science and Engineering���
�
MSEN 8V40 Individual Instruction in
Materials Science and Engineering��
�
MSEN 8V70 Research In Materials Science
and Engineering��
�
MSEN 8V98 Thesis��
�
MSEN 8V99 Dissertation��